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2.

Annealing conditions for intrinsic CdTe
by Berding, M. A.

Applied Physics Letters, 25 January 1999, Vol.74(4), pp.552-554

4.

Amphoteric behavior of arsenic in HgCdTe
by Berding, M. A.

Applied Physics Letters, 01 February 1999, Vol.74(5), pp.685-687

5.

Native defects in CdTe
by Berding, M. A.

Physical Review B, 9/1999, Vol.60(12), pp.8943-8950

7.

Spatially correlated fluctuations and coherence dynamics in photosynthesis.
by Yu, Z G

Physical review. E, Statistical, nonlinear, and soft matter physics, November 2008, Vol.78(5 Pt 1), p.050902

11.

Deactivation in heavily arsenic-doped silicon
by Berding, M. A.

Applied Physics Letters, 23 March 1998, Vol.72(12), pp.1492-1494

12.

Direct gap in ordered silicon carbon alloys
by Krishnamurthy, Srinivasan

Applied Physics Letters, 15 November 1999, Vol.75(20), pp.3153-3155

14.

Core-shell nanorods for efficient photoelectrochemical hydrogen production.
by Yu, Z G

The journal of physical chemistry. B, December 8, 2005, Vol.109(48), pp.22913-22919

17.

Group-IV semiconductor compounds
by Berding, M.A

Physical Review, B: Condensed Matter, 01 August 1997, Vol.56(7)

18.

Minority carrier lifetimes in HgCdTe alloys
by Krishnamurthy, S.

Journal of Electronic Materials, 2006, Vol.35(6), pp.1369-1378

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