1.
Comparative Characteristic Analysis of Thermophotovoltaic p-InAsSbP/n-InAs Converters Irradiated on p- and n-Sides
by Matveev, B. A
Technical physics, 2019-08-12, Vol.64 (8), p.1164-1167
2.
Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches
by Tsai, Jung-Hui
Semiconductors (Woodbury, N.Y.), 2019-04-23, Vol.53 (3), p.406-410
3.
Spatial redistribution of radiation in flip-chip photodiodes based on InAsSbP/InAs double heterostructures
by Zakgeim, A. L
Semiconductors (Woodbury, N.Y.), 2017-02-10, Vol.51 (2), p.260-266
4.
On the high characteristic temperature of an InAs/GaAs/InGaAsP QD laser with an emission wavelength of ~1.5 μm on an InP substrate
by Zubov, F. I
Semiconductors (Woodbury, N.Y.), 2017-10-07, Vol.51 (10), p.1332-1336
5.
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection
by Romanov, V. V
Semiconductors (Woodbury, N.Y.), 2019-06-10, Vol.53 (6), p.822-827
6.
Peculiarities of growing InGaAs/GaAs/AlGaAs laser structures by MOCVD on Ge/Si substrates
by Baidus, N. V
Semiconductors (Woodbury, N.Y.), 2017-11-03, Vol.51 (11), p.1527-1530
7.
Recombination in GaAs p–i–n Structures with InGaAs Quantum-Confined Objects: Modeling and Regularities
by Mintairov, M. A
Semiconductors (Woodbury, N.Y.), 2018-09-06, Vol.52 (10), p.1244-1248
8.
Time-Resolved Photoluminescence of InGaAs Nanostructures Different in Quantum Dimensionality
by Nadtochiy, A. M
Semiconductors (Woodbury, N.Y.), 2019-11-06, Vol.53 (11), p.1489-1495
9.
On the Combined Application of Raman Spectroscopy and Photoluminescence Spectroscopy for the Diagnostics of Multilayer Heterostructures
by Plankina, S. M
Semiconductors (Woodbury, N.Y.), 2019-09-03, Vol.53 (9), p.1207-1210
10.
On the Application of Strain-Compensating GaAsP Layers for the Growth of InGaAs/GaAs Quantum-Well Laser Heterostructures Emitting at Wavelengths above 1100 nm on Artificial Ge/Si S...
by Baidus, N. V
Semiconductors (Woodbury, N.Y.), 2018-11-07, Vol.52 (12), p.1547-1550
11.
Specific Features of the Electrochemical Capacitance–Voltage Profiling of GaAs LED and pHEMT Structures with Quantum-Confined Regions
by Yakovlev, G. E
Semiconductors (Woodbury, N.Y.), 2018-07-06, Vol.52 (8), p.1004-1011
12.
Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates
by Samartsev, I. V
Semiconductors (Woodbury, N.Y.), 2018-11-07, Vol.52 (12), p.1564-1567
13.
Submonolayer InGaAs/GaAs Quantum Dots Grown by MOCVD
by Aleshkin, V. Ya
Semiconductors (Woodbury, N.Y.), 2019-08-07, Vol.53 (8), p.1138-1142
14.
Molecular-beam epitaxy of InGaAs/InAlAs/AlAs structures for heterobarrier varactors
by Maleev, N. A
Semiconductors (Woodbury, N.Y.), 2017-11-03, Vol.51 (11), p.1431-1434
15.
Multilayer Quantum Well–Dot InGaAs Heterostructures in GaAs-based Photovoltaic Converters
by Mintairov, S. A
Semiconductors (Woodbury, N.Y.), 2018-09-06, Vol.52 (10), p.1249-1254
16.
Module of Laser-Radiation (λ = 1064 nm) Photovoltaic Converters
by Khvostikov, V. P
Semiconductors (Woodbury, N.Y.), 2019-08-07, Vol.53 (8), p.1110-1113
17.
Effect of Dislocation-related Deep Levels in Heteroepitaxial InGaAs/GaAs and GaAsSb/GaAs p–i–n Structures on the Relaxation time of Nonequilibrium Carriers
by Sobolev, M. M
Semiconductors (Woodbury, N.Y.), 2018-02-05, Vol.52 (2), p.165-171
18.
Lateral Mode Discrimination in Edge-Emitting Lasers with Spatially Modulated Facet Reflectance
by Gordeev, N. Yu
Semiconductors (Woodbury, N.Y.), 2019-04-23, Vol.53 (2), p.200-204
19.
Self-Consistent Simulation of GaAs/InGaAs/AlGaAs Heterostructures Photoluminescence Spectra and Its Application to pHEMT Structures Diagnostics
by Mironova, M. S
Semiconductors (Woodbury, N.Y.), 2018-04-03, Vol.52 (4), p.507-510
20.
MOS-Hydride Epitaxy Growth of InGaAs/GaAs Submonolayer Quantum Dots for the Excitation of Surface Plasmon–Polaritons
by Baidus, N. V
Semiconductors (Woodbury, N.Y.), 2019-04-23, Vol.53 (3), p.326-331
