1.
Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures
by Zaman, Muhammad Yousuf
Materials science forum, 2012-01-24, Vol.711, p.174-178
2.
4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts
by Perrone, Denis
Materials science forum, 2009-03-02, Vol.615-617, p.647-650
3.
Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode
by Zaman, Muhammad Yousuf
Materials science forum, 2012-01-24, Vol.711, p.188-192
4.
Schottky Contacts to N-Type 4H-SiC Fabricated with Ti-, Mo-, Ni- and Al-Based Metallizations
by Celasco, Edvige
Materials science forum, 2011-03-28, Vol.679-680, p.453-456
5.
Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC
by Perrone, Denis
Materials science forum, 2010-04-29, Vol.645-648, p.227-230
6.
Study of the Electrical Characteristics of the CNT/SiC Interface
by Perrone, Denis
Materials science forum, 2009-03-02, Vol.615-617, p.231-234
7.
Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC
by Bontempi, E
Materials Science Forum, 2005-05-15, Vol.483-485, p.733-736
8.
Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes
by Richieri, G
Materials science forum, 2005-05-15, Vol.483-485, p.941-944
9.
Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes
by Cavallini, Anna
Materials science forum, 2004-06-15, Vol.457-460, p.1081-1084
