1.
Diffusivities and Atomic Mobilities of Sn-Bi and Sn-Pb Melts
by Chen, Wei-Min
Journal of Electronic Materials, 2013, Vol.42(6), pp.1158-1170

2.
Memory Effect of Metal-Insulator-Silicon Capacitor with HfO 2 -Al 2 O 3 Multilayer and Hafnium Nitride Gate
by Ding, Shi-Jin
Journal of Electronic Materials, 2007, Vol.36(3), pp.253-257

3.
Interfacial Reactions in Sn-Ag/Co Couples
by Chen, Sinn-wen
Journal of Electronic Materials, 2014, Vol.43(2), pp.636-639

4.
Synthesis and Electronic Transport of Hydrothermally Synthesized p -Type Na-Doped SnSe
by Yang, Zong-Ren
Journal of Electronic Materials, 2017, Vol.46(5), pp.2964-2968

5.
Preparation of CuSbS 2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n -Type InGaN as a Substitute of ZnO
by Chen, Wei-Liang
Journal of Electronic Materials, 2016, Vol.45(1), pp.688-694

6.
Research on the Injection Performance of a Novel Lubricating Device Based on Piezoelectric Micro-Jet Technology
by Li, Kai
Journal of Electronic Materials, 2016, Vol.45(8), pp.4380-4389

7.
Refinement of the β -Sn Grains in Ni-Doped Sn-3.0Ag-0.5Cu Solder Joints with Cu-Based and Ni-Based Substrates
by Chou, Tzu-Ting
Journal of Electronic Materials, 2018, Vol.47(5), pp.2911-2919

8.
Diffusivities and Atomic Mobilities of Sn-Ag and Sn-In Melts
by Chen, Wei-Min
Journal of Electronic Materials, 2014, Vol.43(4), pp.1131-1143

9.
Effects of Electrical Current and External Stress on the Electromigration of Intermetallic Compounds Between the Flip-Chip Solder and Copper Substrate
by Chen, Wei-Jhen
Journal of Electronic Materials, 2018, Vol.47(1), pp.35-48

10.
Electrochemical Performance of Nano-SnO 2 Anode with Carbonized Carbon Nanotubes Paper as Host
by Qiu, Zhiwen
Journal of Electronic Materials, 2018, Vol.47(10), pp.5850-5857

11.
Assessing Ink Transfer Performance of Gravure-Offset Fine-Line Circuitry Printing
by Cheng, Hsien-Chie
Journal of Electronic Materials, 2018, Vol.47(3), pp.1832-1846

12.
A 3D Configuration Electrode for Lithium–Sulfur Batteries
by Wang, Jie
Journal of Electronic Materials, 2018, Vol.47(12), pp.7449-7455

13.
Dissolution and Interfacial Reactions of (Cu,N[i).sub.6]Sn.sub.5 Intermetallic Compound in Molten Sn-Cu-Ni Solders.(Report)(Author abstract)
by Wang, Chao - Hong
Journal of Electronic Materials, Jan, 2014, Vol.43(1), p.195(9)

14.
Increase mechanism of indium-tin-oxide work function by KrF excimer laser irradiation.(Author abstract)(Report)
by Lin, Yow - Jon
Journal of Electronic Materials, March, 2005, Vol.34(3), p.L9(1)

15.
Influence of Cu content on compound formation near the chip side for the flip-chip Sn-3.0Ag-(0.5 or 1.5)Cu solder bump during aging.(Author abstract)(Report)
by Jang, Guh - Yaw
Journal of Electronic Materials, Sept, 2006, Vol.35(9), p.1745(10)

16.
Modelling of Freestanding Membrane-Supported Superconducting Al/Ti Bilayer Transition Edge Sensor Bolometer
by Ahmad, Kamal
Journal of Electronic Materials, 2019, Vol.48(2), pp.799-805

17.
Fabrication and Characterization of Superconducting Bilayer (Al/Ti) Transition-Edge Sensor Bolometer Array
by Ahmad, Kamal
Journal of Electronic Materials, 2019, Vol.48(2), pp.925-929

18.
Resistive Switching Characteristics of 10-nm-Thick Amorphous HoScO x Films Doped with Nb and Zn
by Wang, Sea-Fue
Journal of Electronic Materials, 2017, Vol.46(3), pp.1488-1496

19.
Investigation of Ga oxide films directly grown on n-type GaN by photoelectrochemical oxidation using He-Cd laser
by Lee, Ching-Ting
Journal of Electronic Materials, 2005, Vol.34(3), pp.282-286

20.
Effects of Minor Amounts of Zn on the Sn-Zn/Ni Interfacial Reactions and Phase Equilibria of the Ternary Sn-Zn-Ni System at 250degC.(Report)
by Wang, Chao - Hong
Journal of Electronic Materials, Dec, 2011, Vol.40(12), p.2436(9)
