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Scanning tunneling microscopy studies of the formation and coarsening of manganese silicides on Si(111)

Solid-phase epitaxial growth of manganese silicides on a Si ( 111 ) - 7 × 7 surface at temperatures between room temperature and ∼ 750   ° C has been studied using scanning tunneling microscopy. The as-deposited Mn film of ∼ 0.6 – 1   ML shows an ordered honeycomb structure with each Mn cluster occu... Full description

Journal Title: Journal of Applied Physics 01 January 2010, Vol.107(1)
Main Author: Zou, Zhi-Qiang
Other Authors: Wang, Dan , Sun, Jing-Jing , Liang, Jia-Miao
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.3270411
Link: http://dx.doi.org/10.1063/1.3270411
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recordid: aip_complete10.1063/1.3270411
title: Scanning tunneling microscopy studies of the formation and coarsening of manganese silicides on Si(111)
format: Article
creator:
  • Zou, Zhi-Qiang
  • Wang, Dan
  • Sun, Jing-Jing
  • Liang, Jia-Miao
subjects:
  • Articles
ispartof: Journal of Applied Physics, 01 January 2010, Vol.107(1)
description: Solid-phase epitaxial growth of manganese silicides on a Si ( 111 ) - 7 × 7 surface at temperatures between room temperature and ∼ 750   ° C has been studied using scanning tunneling microscopy. The as-deposited Mn film of ∼ 0.6 – 1   ML shows an ordered honeycomb structure with each Mn cluster occupying a half of the 7 × 7   unit cell. The Mn clusters begin to react with the Si substrate to form silicides at ∼ 250   ° C . Two types of silicides, the three-dimensional (3D) and tabular islands, which correspond to Mn-rich silicides and monosilicide MnSi, respectively, coexist on the Si(111) surface at annealing temperatures between 250 and 500   ° C . At 500   ° C annealing, all 3D islands convert into tabular islands and MnSi is the only Mn silicide phase. Above 600   ° C , the tabular islands convert into large 3D islands that are likely to be Si-rich manganese silicides. With increasing annealing temperature and time, the number density of silicide islands decreases, while the average size (area) of the remaining islands increases. The growth of large islands is a result of the dissolution of small ones, which can be understood in the context of Ostwald ripening mechanism.
language: eng
source:
identifier: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.3270411
fulltext: fulltext
issn:
  • 0021-8979
  • 1089-7550
  • 00218979
  • 10897550
url: Link


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titleScanning tunneling microscopy studies of the formation and coarsening of manganese silicides on Si(111)
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descriptionSolid-phase epitaxial growth of manganese silicides on a Si ( 111 ) - 7 × 7 surface at temperatures between room temperature and ∼ 750   ° C has been studied using scanning tunneling microscopy. The as-deposited Mn film of ∼ 0.6 – 1   ML shows an ordered honeycomb structure with each Mn cluster occupying a half of the 7 × 7   unit cell. The Mn clusters begin to react with the Si substrate to form silicides at ∼ 250   ° C . Two types of silicides, the three-dimensional (3D) and tabular islands, which correspond to Mn-rich silicides and monosilicide MnSi, respectively, coexist on the Si(111) surface at annealing temperatures between 250 and 500   ° C . At 500   ° C annealing, all 3D islands convert into tabular islands and MnSi is the only Mn silicide phase. Above 600   ° C , the tabular islands convert into large 3D islands that are likely to be Si-rich manganese silicides. With increasing annealing temperature and time, the number density of silicide islands decreases, while the average size (area) of the remaining islands increases. The growth of large islands is a result of the dissolution of small ones, which can be understood in the context of Ostwald ripening mechanism.
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descriptionSolid-phase epitaxial growth of manganese silicides on a Si ( 111 ) - 7 × 7 surface at temperatures between room temperature and ∼ 750   ° C has been studied using scanning tunneling microscopy. The as-deposited Mn film of ∼ 0.6 – 1   ML shows an ordered honeycomb structure with each Mn cluster occupying a half of the 7 × 7   unit cell. The Mn clusters begin to react with the Si substrate to form silicides at ∼ 250   ° C . Two types of silicides, the three-dimensional (3D) and tabular islands, which correspond to Mn-rich silicides and monosilicide MnSi, respectively, coexist on the Si(111) surface at annealing temperatures between 250 and 500   ° C . At 500   ° C annealing, all 3D islands convert into tabular islands and MnSi is the only Mn silicide phase. Above 600   ° C , the tabular islands convert into large 3D islands that are likely to be Si-rich manganese silicides. With increasing annealing temperature and time, the number density of silicide islands decreases, while the average size (area) of the remaining islands increases. The growth of large islands is a result of the dissolution of small ones, which can be understood in the context of Ostwald ripening mechanism.
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abstractSolid-phase epitaxial growth of manganese silicides on a Si ( 111 ) - 7 × 7 surface at temperatures between room temperature and ∼ 750   ° C has been studied using scanning tunneling microscopy. The as-deposited Mn film of ∼ 0.6 – 1   ML shows an ordered honeycomb structure with each Mn cluster occupying a half of the 7 × 7   unit cell. The Mn clusters begin to react with the Si substrate to form silicides at ∼ 250   ° C . Two types of silicides, the three-dimensional (3D) and tabular islands, which correspond to Mn-rich silicides and monosilicide MnSi, respectively, coexist on the Si(111) surface at annealing temperatures between 250 and 500   ° C . At 500   ° C annealing, all 3D islands convert into tabular islands and MnSi is the only Mn silicide phase. Above 600   ° C , the tabular islands convert into large 3D islands that are likely to be Si-rich manganese silicides. With increasing annealing temperature and time, the number density of silicide islands decreases, while the average size (area) of the remaining islands increases. The growth of large islands is a result of the dissolution of small ones, which can be understood in the context of Ostwald ripening mechanism.
pubAmerican Institute of Physics
doi10.1063/1.3270411
date2010-01-01