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Tuning carrier type and density in Bi 2 Se 3 by Ca-doping

The carrier type and density in Bi 2 Se 3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ∼ 1 × 10 17   cm − 3 which corresponds to ∼ 25   meV in the Fermi energy is obtained in both n - and p -type materials. Electrical transport properties show t... Full description

Journal Title: Applied Physics Letters 26 July 2010, Vol.97(4)
Main Author: Wang, Zhiyong
Other Authors: Lin, Tao , Wei, Peng , Liu, Xinfei , Dumas, Randy , Liu, Kai , Shi, Jing
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.3473778
Link: http://dx.doi.org/10.1063/1.3473778
Zum Text:
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recordid: aip_complete10.1063/1.3473778
title: Tuning carrier type and density in Bi 2 Se 3 by Ca-doping
format: Article
creator:
  • Wang, Zhiyong
  • Lin, Tao
  • Wei, Peng
  • Liu, Xinfei
  • Dumas, Randy
  • Liu, Kai
  • Shi, Jing
subjects:
  • Electronic Transport And Semiconductors
ispartof: Applied Physics Letters, 26 July 2010, Vol.97(4)
description: The carrier type and density in Bi 2 Se 3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ∼ 1 × 10 17   cm − 3 which corresponds to ∼ 25   meV in the Fermi energy is obtained in both n - and p -type materials. Electrical transport properties show that the insulating behavior is achieved in low carrier density crystals. In addition, both the band gap and reduced effective mass of carriers are determined.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.3473778
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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subjectElectronic Transport And Semiconductors
descriptionThe carrier type and density in Bi 2 Se 3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ∼ 1 × 10 17   cm − 3 which corresponds to ∼ 25   meV in the Fermi energy is obtained in both n - and p -type materials. Electrical transport properties show that the insulating behavior is achieved in low carrier density crystals. In addition, both the band gap and reduced effective mass of carriers are determined.
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descriptionThe carrier type and density in Bi 2 Se 3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ∼ 1 × 10 17   cm − 3 which corresponds to ∼ 25   meV in the Fermi energy is obtained in both n - and p -type materials. Electrical transport properties show that the insulating behavior is achieved in low carrier density crystals. In addition, both the band gap and reduced effective mass of carriers are determined.
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abstractThe carrier type and density in Bi 2 Se 3 single crystals are systematically tuned by introducing a calcium (Ca) dopant. A carrier density of ∼ 1 × 10 17   cm − 3 which corresponds to ∼ 25   meV in the Fermi energy is obtained in both n - and p -type materials. Electrical transport properties show that the insulating behavior is achieved in low carrier density crystals. In addition, both the band gap and reduced effective mass of carriers are determined.
pubAmerican Institute of Physics
doi10.1063/1.3473778
date2010-07-26