schliessen

Filtern

 

Bibliotheken

Role of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe

Modification of the bandgap of sub-monolayer type-II ZnTe quantum dots (QDs), by means of direct incorporation of magnesium in the QDs, is reported. Nitrogen co-doped QDs embedded in a ZnSe matrix have been grown by a migration-enhanced molecular beam epitaxy technique. Incorporation of Mg in the Zn... Full description

Journal Title: Journal of Applied Physics 01 August 2011, Vol.110(3)
Main Author: Zhang, Qiang
Other Authors: Shen, Aidong , Kuskovsky, Igor L. , Tamargo, Maria C.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.3611418
Link: http://dx.doi.org/10.1063/1.3611418
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: aip_complete10.1063/1.3611418
title: Role of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe
format: Article
creator:
  • Zhang, Qiang
  • Shen, Aidong
  • Kuskovsky, Igor L.
  • Tamargo, Maria C.
subjects:
  • Articles
ispartof: Journal of Applied Physics, 01 August 2011, Vol.110(3)
description: Modification of the bandgap of sub-monolayer type-II ZnTe quantum dots (QDs), by means of direct incorporation of magnesium in the QDs, is reported. Nitrogen co-doped QDs embedded in a ZnSe matrix have been grown by a migration-enhanced molecular beam epitaxy technique. Incorporation of Mg in the ZnTe QDs decreases the valence band discontinuity, leading to reduced localization of the holes, which results in a higher electrical conductivity in the samples as deduced from the Hall effect measurements. The type-II alignment of the bands in the QDs is supported by intensity dependent and time-resolved photoluminescence measurements. Hall effect measurements indicate that the material has p-type conductivity with mid-10 15 carriers/cm 3 and hole mobilities in the 5–50 cm 2 /V·s range.
language: eng
source:
identifier: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.3611418
fulltext: fulltext
issn:
  • 0021-8979
  • 1089-7550
  • 00218979
  • 10897550
url: Link


@attributes
ID1150763959
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1063/1.3611418
sourceidaip_complete
recordidTN_aip_complete10.1063/1.3611418
sourcesystemOther
galeid270695048
display
typearticle
titleRole of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe
creatorZhang, Qiang ; Shen, Aidong ; Kuskovsky, Igor L. ; Tamargo, Maria C.
ispartofJournal of Applied Physics, 01 August 2011, Vol.110(3)
subjectArticles
descriptionModification of the bandgap of sub-monolayer type-II ZnTe quantum dots (QDs), by means of direct incorporation of magnesium in the QDs, is reported. Nitrogen co-doped QDs embedded in a ZnSe matrix have been grown by a migration-enhanced molecular beam epitaxy technique. Incorporation of Mg in the ZnTe QDs decreases the valence band discontinuity, leading to reduced localization of the holes, which results in a higher electrical conductivity in the samples as deduced from the Hall effect measurements. The type-II alignment of the bands in the QDs is supported by intensity dependent and time-resolved photoluminescence measurements. Hall effect measurements indicate that the material has p-type conductivity with mid-10 15 carriers/cm 3 and hole mobilities in the 5–50 cm 2 /V·s range.
languageeng
source
identifier
version3
lds50peer_reviewed
links
openurl$$Topenurl_article
backlink$$Uhttp://dx.doi.org/10.1063/1.3611418$$EView_source_record
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Zhang, Qiang
1Shen, Aidong
2Kuskovsky, Igor L.
3Tamargo, Maria C.
titleRole of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe
subjectArticles
general
0English
1© 2011 American Institute of Physics (AIP)
2American Institute of Physics
3AIP Journals
410.1063/1.3611418
sourceidaip_complete
recordidaip_complete10.1063/1.3611418
issn
00021-8979
11089-7550
200218979
310897550
rsrctypearticle
searchscopeaip_journals
scopeaip_journals
descriptionModification of the bandgap of sub-monolayer type-II ZnTe quantum dots (QDs), by means of direct incorporation of magnesium in the QDs, is reported. Nitrogen co-doped QDs embedded in a ZnSe matrix have been grown by a migration-enhanced molecular beam epitaxy technique. Incorporation of Mg in the ZnTe QDs decreases the valence band discontinuity, leading to reduced localization of the holes, which results in a higher electrical conductivity in the samples as deduced from the Hall effect measurements. The type-II alignment of the bands in the QDs is supported by intensity dependent and time-resolved photoluminescence measurements. Hall effect measurements indicate that the material has p-type conductivity with mid-10 15 carriers/cm 3 and hole mobilities in the 5–50 cm 2 /V·s range.
creationdate2011
startdate20110801
enddate20110801
addtitleJournal of Applied Physics
lsr40Journal of Applied Physics, 01 August 2011, Vol.110 (3)
citationvol 110 issue 3
lsr30VSR-Enriched:[galeid]
sort
titleRole of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe
authorZhang, Qiang ; Shen, Aidong ; Kuskovsky, Igor L. ; Tamargo, Maria C.
creationdate20110801
lso0120110801
facets
frbrgroupid6253123168818703744
frbrtype5
languageeng
creationdate2011
topicArticles
collectionAIP Journals
prefilterarticles
rsrctypearticles
creatorcontrib
0Zhang, Qiang
1Shen, Aidong
2Kuskovsky, Igor L.
3Tamargo, Maria C.
jtitleJournal of Applied Physics
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Zhang
1Shen
2Kuskovsky
3Tamargo
aufirstQiang ; Aidong ; Igor L. ; Maria C.
auinitQ
au
0Zhang, Qiang
1Shen, Aidong
2Kuskovsky, Igor L.
3Tamargo, Maria C.
atitleRole of magnesium in band gap engineering of sub-monolayer type-II ZnTe quantum dots embedded in ZnSe
jtitleJournal of Applied Physics
stitleJ. Appl. Phys.
risdate20110801
volume110
issue3
issn0021-8979
eissn1089-7550
formatjournal
genrearticle
ristypeJOUR
abstractModification of the bandgap of sub-monolayer type-II ZnTe quantum dots (QDs), by means of direct incorporation of magnesium in the QDs, is reported. Nitrogen co-doped QDs embedded in a ZnSe matrix have been grown by a migration-enhanced molecular beam epitaxy technique. Incorporation of Mg in the ZnTe QDs decreases the valence band discontinuity, leading to reduced localization of the holes, which results in a higher electrical conductivity in the samples as deduced from the Hall effect measurements. The type-II alignment of the bands in the QDs is supported by intensity dependent and time-resolved photoluminescence measurements. Hall effect measurements indicate that the material has p-type conductivity with mid-10 15 carriers/cm 3 and hole mobilities in the 5–50 cm 2 /V·s range.
pubAmerican Institute of Physics
doi10.1063/1.3611418
date2011-08-01