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Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient

The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (V th ) shift is significantly decreased from 1.88 to 0.09 V a... Full description

Journal Title: Applied Physics Letters 09 April 2012, Vol.100(15)
Main Author: Wu, Chun-Yu
Other Authors: Cheng, Huang-Chung , Wang, Chao-Lung , Liao, Ta-Chuan , Chiu, Po-Chun , Tsai, Chih-Hung , Fang, Chun-Hsiang , Lee, Chung-Chun
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: © 2012 American Institute of Physics (AIP)
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.3702794
Link: http://dx.doi.org/10.1063/1.3702794
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recordid: aip_complete10.1063/1.3702794
title: Reliability improvement of InGaZnO thin film transistors encapsulated under nitrogen ambient
format: Article
creator:
  • Wu, Chun-Yu
  • Cheng, Huang-Chung
  • Wang, Chao-Lung
  • Liao, Ta-Chuan
  • Chiu, Po-Chun
  • Tsai, Chih-Hung
  • Fang, Chun-Hsiang
  • Lee, Chung-Chun
subjects:
  • Semiconductors
ispartof: Applied Physics Letters, 09 April 2012, Vol.100(15)
description: The nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (V th ) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61  μ A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the V th during PGBS.
language: eng
source: © 2012 American Institute of Physics (AIP)
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.3702794
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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subjectSemiconductors
descriptionThe nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (V th ) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61  μ A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the V th during PGBS.
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descriptionThe nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (V th ) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61  μ A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the V th during PGBS.
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abstractThe nitrogen ambient encapsulation (NAE) technique is introduced to improve the reliability issue for the amorphous InGaZnO (a-IGZO) thin-film transistors under positive gate bias stress (PGBS). For the NAE devices, the threshold voltage (V th ) shift is significantly decreased from 1.88 to 0.09 V and the reduction of saturation drain current is improved from 15.75 to 5.61  μ A as compared to the bare a-IGZO counterparts after PGBS. These improvements are attributed to the suppression of negatively charged oxygen adsorption on the a-IGZO backsurface and thereby well maintain the channel potential of NAE devices, which in turn sustain the V th during PGBS.
pubAmerican Institute of Physics
doi10.1063/1.3702794
date2012-04-09