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Thermoelectric properties of PbTe with encapsulated bismuth secondary phase

Lead Telluride (PbTe) with bismuth secondary phase embedded in the bulk has been prepared by matrix encapsulation technique. X-Ray Diffraction results indicated crystalline PbTe, while Rietveld analysis showed that Bi did not substitute at either Pb or Te site, which was further confirmed by Raman a... Full description

Journal Title: Journal of Applied Physics 28 March 2013, Vol.113(12)
Main Author: Bali, Ashoka
Other Authors: Royanian, Esmaeil , Bauer, Ernst , Rogl, Peter , Chandra Mallik, Ramesh
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.4796148
Link: http://dx.doi.org/10.1063/1.4796148
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recordid: aip_complete10.1063/1.4796148
title: Thermoelectric properties of PbTe with encapsulated bismuth secondary phase
format: Article
creator:
  • Bali, Ashoka
  • Royanian, Esmaeil
  • Bauer, Ernst
  • Rogl, Peter
  • Chandra Mallik, Ramesh
subjects:
  • Articles
ispartof: Journal of Applied Physics, 28 March 2013, Vol.113(12)
description: Lead Telluride (PbTe) with bismuth secondary phase embedded in the bulk has been prepared by matrix encapsulation technique. X-Ray Diffraction results indicated crystalline PbTe, while Rietveld analysis showed that Bi did not substitute at either Pb or Te site, which was further confirmed by Raman and X-Ray Photoelectron Spectroscopy. Scanning Electron Microscopy showed the expected presence of a secondary phase, while Energy Dispersive Spectroscopy results showed a slight deficiency of tellurium in the PbTe matrix, which might have occurred during synthesis due to higher vapor pressure of Te. Transmission Electron Microscopy results did not show any nanometer sized Bi phase. Seebeck coefficient (S) and electrical conductivity (σ) were measured from room temperature to 725 K. A decrease in S and σ with increasing Bi content showed an increased scattering of electrons from PbTe-Bi interfaces, along with a possible electron acceptor role of Bi secondary phase. An overall decrease in the power factor was thus observed. Thermal conductivity, measured from 400 K to 725 K, was smaller at starting temperature with increasing Bi concentration, and almost comparable to that of PbTe at higher temperatures, indicating a more important role of electrons as compared to phonons at PbTe-Bi interfaces. Still, a reasonable z T of 0.8 at 725 K was achieved for undoped PbTe, but no improvement was found for bismuth added samples with micrometer inclusions.
language: eng
source:
identifier: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.4796148
fulltext: fulltext
issn:
  • 0021-8979
  • 1089-7550
  • 00218979
  • 10897550
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descriptionLead Telluride (PbTe) with bismuth secondary phase embedded in the bulk has been prepared by matrix encapsulation technique. X-Ray Diffraction results indicated crystalline PbTe, while Rietveld analysis showed that Bi did not substitute at either Pb or Te site, which was further confirmed by Raman and X-Ray Photoelectron Spectroscopy. Scanning Electron Microscopy showed the expected presence of a secondary phase, while Energy Dispersive Spectroscopy results showed a slight deficiency of tellurium in the PbTe matrix, which might have occurred during synthesis due to higher vapor pressure of Te. Transmission Electron Microscopy results did not show any nanometer sized Bi phase. Seebeck coefficient (S) and electrical conductivity (σ) were measured from room temperature to 725 K. A decrease in S and σ with increasing Bi content showed an increased scattering of electrons from PbTe-Bi interfaces, along with a possible electron acceptor role of Bi secondary phase. An overall decrease in the power factor was thus observed. Thermal conductivity, measured from 400 K to 725 K, was smaller at starting temperature with increasing Bi concentration, and almost comparable to that of PbTe at higher temperatures, indicating a more important role of electrons as compared to phonons at PbTe-Bi interfaces. Still, a reasonable z T of 0.8 at 725 K was achieved for undoped PbTe, but no improvement was found for bismuth added samples with micrometer inclusions.
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descriptionLead Telluride (PbTe) with bismuth secondary phase embedded in the bulk has been prepared by matrix encapsulation technique. X-Ray Diffraction results indicated crystalline PbTe, while Rietveld analysis showed that Bi did not substitute at either Pb or Te site, which was further confirmed by Raman and X-Ray Photoelectron Spectroscopy. Scanning Electron Microscopy showed the expected presence of a secondary phase, while Energy Dispersive Spectroscopy results showed a slight deficiency of tellurium in the PbTe matrix, which might have occurred during synthesis due to higher vapor pressure of Te. Transmission Electron Microscopy results did not show any nanometer sized Bi phase. Seebeck coefficient (S) and electrical conductivity (σ) were measured from room temperature to 725 K. A decrease in S and σ with increasing Bi content showed an increased scattering of electrons from PbTe-Bi interfaces, along with a possible electron acceptor role of Bi secondary phase. An overall decrease in the power factor was thus observed. Thermal conductivity, measured from 400 K to 725 K, was smaller at starting temperature with increasing Bi concentration, and almost comparable to that of PbTe at higher temperatures, indicating a more important role of electrons as compared to phonons at PbTe-Bi interfaces. Still, a reasonable z T of 0.8 at 725 K was achieved for undoped PbTe, but no improvement was found for bismuth added samples with micrometer inclusions.
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abstractLead Telluride (PbTe) with bismuth secondary phase embedded in the bulk has been prepared by matrix encapsulation technique. X-Ray Diffraction results indicated crystalline PbTe, while Rietveld analysis showed that Bi did not substitute at either Pb or Te site, which was further confirmed by Raman and X-Ray Photoelectron Spectroscopy. Scanning Electron Microscopy showed the expected presence of a secondary phase, while Energy Dispersive Spectroscopy results showed a slight deficiency of tellurium in the PbTe matrix, which might have occurred during synthesis due to higher vapor pressure of Te. Transmission Electron Microscopy results did not show any nanometer sized Bi phase. Seebeck coefficient (S) and electrical conductivity (σ) were measured from room temperature to 725 K. A decrease in S and σ with increasing Bi content showed an increased scattering of electrons from PbTe-Bi interfaces, along with a possible electron acceptor role of Bi secondary phase. An overall decrease in the power factor was thus observed. Thermal conductivity, measured from 400 K to 725 K, was smaller at starting temperature with increasing Bi concentration, and almost comparable to that of PbTe at higher temperatures, indicating a more important role of electrons as compared to phonons at PbTe-Bi interfaces. Still, a reasonable z T of 0.8 at 725 K was achieved for undoped PbTe, but no improvement was found for bismuth added samples with micrometer inclusions.
pubAmerican Institute of Physics
doi10.1063/1.4796148
date2013-03-28