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Inelastic spin depolarization spectroscopy in silicon

In ballistic injection spin transport devices, a tunnel junction emitter bias voltage determines the energy at which spin-polarized hot electrons cross a Schottky barrier into the conduction band of a semiconductor collector. Fast energy relaxation via phonon emission restores equilibrium for subseq... Full description

Journal Title: Journal of Applied Physics 21 July 2013, Vol.114(3)
Main Author: Li, Jing
Other Authors: Appelbaum, Ian
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.4815873
Link: http://dx.doi.org/10.1063/1.4815873
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recordid: aip_complete10.1063/1.4815873
title: Inelastic spin depolarization spectroscopy in silicon
format: Article
creator:
  • Li, Jing
  • Appelbaum, Ian
subjects:
  • Articles
ispartof: Journal of Applied Physics, 21 July 2013, Vol.114(3)
description: In ballistic injection spin transport devices, a tunnel junction emitter bias voltage determines the energy at which spin-polarized hot electrons cross a Schottky barrier into the conduction band of a semiconductor collector. Fast energy relaxation via phonon emission restores equilibrium for subsequent transport at the band edge. Through an analysis incorporating voltage-dependent measurement of magnetocurrent polarization in silicon spin transport devices along with magnetic-tunnel- and spin-valve-transistor configurations, the contribution to total spin depolarization caused by this inelastic scattering in the presence of spin-orbit interaction is quantified. From the shape of this spectroscopy, it is found that all measured spin depolarization can be accounted for solely by considering spin relaxation during bulk transport in quasi-equilibrium near the conduction band edge; the relaxation of initial spin state is irrelevant to the spin-dependent device characteristics.
language: eng
source:
identifier: ISSN: 0021-8979 ; E-ISSN: 1089-7550 ; DOI: 10.1063/1.4815873
fulltext: fulltext
issn:
  • 0021-8979
  • 1089-7550
  • 00218979
  • 10897550
url: Link


@attributes
ID1783851441
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1063/1.4815873
sourceidaip_complete
recordidTN_aip_complete10.1063/1.4815873
sourcesystemOther
galeid346432097
display
typearticle
titleInelastic spin depolarization spectroscopy in silicon
creatorLi, Jing ; Appelbaum, Ian
ispartofJournal of Applied Physics, 21 July 2013, Vol.114(3)
subjectArticles
descriptionIn ballistic injection spin transport devices, a tunnel junction emitter bias voltage determines the energy at which spin-polarized hot electrons cross a Schottky barrier into the conduction band of a semiconductor collector. Fast energy relaxation via phonon emission restores equilibrium for subsequent transport at the band edge. Through an analysis incorporating voltage-dependent measurement of magnetocurrent polarization in silicon spin transport devices along with magnetic-tunnel- and spin-valve-transistor configurations, the contribution to total spin depolarization caused by this inelastic scattering in the presence of spin-orbit interaction is quantified. From the shape of this spectroscopy, it is found that all measured spin depolarization can be accounted for solely by considering spin relaxation during bulk transport in quasi-equilibrium near the conduction band edge; the relaxation of initial spin state is irrelevant to the spin-dependent device characteristics.
languageeng
source
identifier
version3
lds50peer_reviewed
links
openurl$$Topenurl_article
backlink$$Uhttp://dx.doi.org/10.1063/1.4815873$$EView_source_record
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Li, Jing
1Appelbaum, Ian
titleInelastic spin depolarization spectroscopy in silicon
subjectArticles
general
0English
1© 2013 AIP Publishing LLC (AIP)
2American Institute of Physics
3AIP Journals
410.1063/1.4815873
sourceidaip_complete
recordidaip_complete10.1063/1.4815873
issn
00021-8979
11089-7550
200218979
310897550
rsrctypearticle
searchscopeaip_journals
scopeaip_journals
descriptionIn ballistic injection spin transport devices, a tunnel junction emitter bias voltage determines the energy at which spin-polarized hot electrons cross a Schottky barrier into the conduction band of a semiconductor collector. Fast energy relaxation via phonon emission restores equilibrium for subsequent transport at the band edge. Through an analysis incorporating voltage-dependent measurement of magnetocurrent polarization in silicon spin transport devices along with magnetic-tunnel- and spin-valve-transistor configurations, the contribution to total spin depolarization caused by this inelastic scattering in the presence of spin-orbit interaction is quantified. From the shape of this spectroscopy, it is found that all measured spin depolarization can be accounted for solely by considering spin relaxation during bulk transport in quasi-equilibrium near the conduction band edge; the relaxation of initial spin state is irrelevant to the spin-dependent device characteristics.
creationdate2013
startdate20130721
enddate20130721
addtitleJournal of Applied Physics
lsr40Journal of Applied Physics, 21 July 2013, Vol.114 (3)
citationvol 114 issue 3
lsr30VSR-Enriched:[galeid]
sort
titleInelastic spin depolarization spectroscopy in silicon
authorLi, Jing ; Appelbaum, Ian
creationdate20130721
lso0120130721
facets
frbrgroupid7364805834144406729
frbrtype5
languageeng
creationdate2013
topicArticles
collectionAIP Journals
prefilterarticles
rsrctypearticles
creatorcontrib
0Li, Jing
1Appelbaum, Ian
jtitleJournal of Applied Physics
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Li
1Appelbaum
aufirstJing ; Ian
auinitJ
au
0Li, Jing
1Appelbaum, Ian
atitleInelastic spin depolarization spectroscopy in silicon
jtitleJournal of Applied Physics
stitleJ. Appl. Phys.
risdate20130721
volume114
issue3
issn0021-8979
eissn1089-7550
formatjournal
genrearticle
ristypeJOUR
abstractIn ballistic injection spin transport devices, a tunnel junction emitter bias voltage determines the energy at which spin-polarized hot electrons cross a Schottky barrier into the conduction band of a semiconductor collector. Fast energy relaxation via phonon emission restores equilibrium for subsequent transport at the band edge. Through an analysis incorporating voltage-dependent measurement of magnetocurrent polarization in silicon spin transport devices along with magnetic-tunnel- and spin-valve-transistor configurations, the contribution to total spin depolarization caused by this inelastic scattering in the presence of spin-orbit interaction is quantified. From the shape of this spectroscopy, it is found that all measured spin depolarization can be accounted for solely by considering spin relaxation during bulk transport in quasi-equilibrium near the conduction band edge; the relaxation of initial spin state is irrelevant to the spin-dependent device characteristics.
pubAmerican Institute of Physics
doi10.1063/1.4815873
date2013-07-21