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The strain models of misfit dislocations at cubic semiconductors hetero-interfaces

The misfit dislocations at cubic semiconductors hetero-interfaces were quantitatively investigated by high angle dark field scanning transmission electron microscopy in combination with geometric phase analysis and dislocation density tensor analysis. A detailed comparison of the extracted informati... Full description

Journal Title: Applied Physics Letters 02 September 2013, Vol.103(10)
Main Author: Wang, Yi
Other Authors: Ruterana, P.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4820385
Link: http://dx.doi.org/10.1063/1.4820385
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recordid: aip_complete10.1063/1.4820385
title: The strain models of misfit dislocations at cubic semiconductors hetero-interfaces
format: Article
creator:
  • Wang, Yi
  • Ruterana, P.
subjects:
  • Semiconductors
ispartof: Applied Physics Letters, 02 September 2013, Vol.103(10)
description: The misfit dislocations at cubic semiconductors hetero-interfaces were quantitatively investigated by high angle dark field scanning transmission electron microscopy in combination with geometric phase analysis and dislocation density tensor analysis. A detailed comparison of the extracted information with the available dislocation models (Peierls-Nabarro and Foreman model) in bulk materials shows that these models can be adapted to the misfit dislocations at lattice mismatched interface. A typical illustration is made for GaSb/GaAs, where it is shown that the strain fields of the 60° dislocation follows the Foreman model ( a = 1.8 ), in case of the Lomer and 60° dislocation pair, the Foreman ( a = 2.5 ) and Peierls-Nabarro model apply for ε xx and ε yy , respectively.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4820385
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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descriptionThe misfit dislocations at cubic semiconductors hetero-interfaces were quantitatively investigated by high angle dark field scanning transmission electron microscopy in combination with geometric phase analysis and dislocation density tensor analysis. A detailed comparison of the extracted information with the available dislocation models (Peierls-Nabarro and Foreman model) in bulk materials shows that these models can be adapted to the misfit dislocations at lattice mismatched interface. A typical illustration is made for GaSb/GaAs, where it is shown that the strain fields of the 60° dislocation follows the Foreman model ( a = 1.8 ), in case of the Lomer and 60° dislocation pair, the Foreman ( a = 2.5 ) and Peierls-Nabarro model apply for ε xx and ε yy , respectively.
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descriptionThe misfit dislocations at cubic semiconductors hetero-interfaces were quantitatively investigated by high angle dark field scanning transmission electron microscopy in combination with geometric phase analysis and dislocation density tensor analysis. A detailed comparison of the extracted information with the available dislocation models (Peierls-Nabarro and Foreman model) in bulk materials shows that these models can be adapted to the misfit dislocations at lattice mismatched interface. A typical illustration is made for GaSb/GaAs, where it is shown that the strain fields of the 60° dislocation follows the Foreman model ( a = 1.8 ), in case of the Lomer and 60° dislocation pair, the Foreman ( a = 2.5 ) and Peierls-Nabarro model apply for ε xx and ε yy , respectively.
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abstractThe misfit dislocations at cubic semiconductors hetero-interfaces were quantitatively investigated by high angle dark field scanning transmission electron microscopy in combination with geometric phase analysis and dislocation density tensor analysis. A detailed comparison of the extracted information with the available dislocation models (Peierls-Nabarro and Foreman model) in bulk materials shows that these models can be adapted to the misfit dislocations at lattice mismatched interface. A typical illustration is made for GaSb/GaAs, where it is shown that the strain fields of the 60° dislocation follows the Foreman model ( a = 1.8 ), in case of the Lomer and 60° dislocation pair, the Foreman ( a = 2.5 ) and Peierls-Nabarro model apply for ε xx and ε yy , respectively.
pubAmerican Institute of Physics
doi10.1063/1.4820385
date2013-09-02