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Small-scale effect on the piezoelectric potential of gallium nitride nanowires

The small-scale effect on the piezoelectric potential of strained gallium nitride (GaN) nanowires (NWs) is studied by employing the size-dependent dielectric constant measured from the present molecular dynamics simulations and previous reported size-dependent elastic constant and piezoelectric coef... Full description

Journal Title: Applied Physics Letters 23 June 2014, Vol.104(25)
Main Author: Zhang, Jin
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4885538
Link: http://dx.doi.org/10.1063/1.4885538
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recordid: aip_complete10.1063/1.4885538
title: Small-scale effect on the piezoelectric potential of gallium nitride nanowires
format: Article
creator:
  • Zhang, Jin
subjects:
  • Nanoscale Science And Technology
ispartof: Applied Physics Letters, 23 June 2014, Vol.104(25)
description: The small-scale effect on the piezoelectric potential of strained gallium nitride (GaN) nanowires (NWs) is studied by employing the size-dependent dielectric constant measured from the present molecular dynamics simulations and previous reported size-dependent elastic constant and piezoelectric coefficient. The intrinsic GaN NWs without free charge carriers are considered in the present study. The results show that the small-scale effect is significant for NWs in the range of nanometers and may increase the piezoelectric potential by up to a dozen times. The small-scale effect is also found to decrease with increasing NW cross-section and a critical cross-sectional size of 38 nm is obtained for almost negligible small-scale effect on the piezoelectric potential of GaN NWs. The present work can be further extended to the as-grown GaN NWs in the future by considering the free charge effect.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4885538
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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descriptionThe small-scale effect on the piezoelectric potential of strained gallium nitride (GaN) nanowires (NWs) is studied by employing the size-dependent dielectric constant measured from the present molecular dynamics simulations and previous reported size-dependent elastic constant and piezoelectric coefficient. The intrinsic GaN NWs without free charge carriers are considered in the present study. The results show that the small-scale effect is significant for NWs in the range of nanometers and may increase the piezoelectric potential by up to a dozen times. The small-scale effect is also found to decrease with increasing NW cross-section and a critical cross-sectional size of 38 nm is obtained for almost negligible small-scale effect on the piezoelectric potential of GaN NWs. The present work can be further extended to the as-grown GaN NWs in the future by considering the free charge effect.
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descriptionThe small-scale effect on the piezoelectric potential of strained gallium nitride (GaN) nanowires (NWs) is studied by employing the size-dependent dielectric constant measured from the present molecular dynamics simulations and previous reported size-dependent elastic constant and piezoelectric coefficient. The intrinsic GaN NWs without free charge carriers are considered in the present study. The results show that the small-scale effect is significant for NWs in the range of nanometers and may increase the piezoelectric potential by up to a dozen times. The small-scale effect is also found to decrease with increasing NW cross-section and a critical cross-sectional size of 38 nm is obtained for almost negligible small-scale effect on the piezoelectric potential of GaN NWs. The present work can be further extended to the as-grown GaN NWs in the future by considering the free charge effect.
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abstractThe small-scale effect on the piezoelectric potential of strained gallium nitride (GaN) nanowires (NWs) is studied by employing the size-dependent dielectric constant measured from the present molecular dynamics simulations and previous reported size-dependent elastic constant and piezoelectric coefficient. The intrinsic GaN NWs without free charge carriers are considered in the present study. The results show that the small-scale effect is significant for NWs in the range of nanometers and may increase the piezoelectric potential by up to a dozen times. The small-scale effect is also found to decrease with increasing NW cross-section and a critical cross-sectional size of 38 nm is obtained for almost negligible small-scale effect on the piezoelectric potential of GaN NWs. The present work can be further extended to the as-grown GaN NWs in the future by considering the free charge effect.
pubAmerican Institute of Physics
doi10.1063/1.4885538
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date2014-06-23