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Analysis of different tunneling mechanisms of In x Ga 1−x As/AlGaAs tunnel junction light-emitting transistors

The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunnelin... Full description

Journal Title: Applied Physics Letters 27 October 2014, Vol.105(17)
Main Author: Wu, Cheng-Han
Other Authors: Wu, Chao-Hsin
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4898342
Link: http://dx.doi.org/10.1063/1.4898342
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recordid: aip_complete10.1063/1.4898342
title: Analysis of different tunneling mechanisms of In x Ga 1−x As/AlGaAs tunnel junction light-emitting transistors
format: Article
creator:
  • Wu, Cheng-Han
  • Wu, Chao-Hsin
subjects:
  • Photonics And Optoelectronics
ispartof: Applied Physics Letters, 27 October 2014, Vol.105(17)
description: The electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4898342
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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subjectPhotonics And Optoelectronics
descriptionThe electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.
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descriptionThe electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.
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abstractThe electrical and optical characteristics of tunnel junction light-emitting transistors (TJLETs) with different indium mole fractions (x = 5% and 2.5%) of the In x Ga 1−x As base-collector tunnel junctions have been investigated. Two electron tunneling mechanisms (photon-assisted or direct tunneling) provide additional currents to electrical output and resupply holes back to the base region, resulting in the upward slope of I-V curves and enhanced optical output under forward-active operation. The larger direct tunneling probability and stronger Franz-Keldysh absorption for 5% TJLET lead to higher collector current slope and less optical intensity enhancement when base-collector junction is under reverse-biased.
pubAIP Publishing LLC
doi10.1063/1.4898342
date2014-10-27