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Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride

The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge car... Full description

Journal Title: Applied Physics Letters 11 May 2015, Vol.106(19)
Main Author: Dauber, Jan
Other Authors: Sagade, Abhay A. , Oellers, Martin , Watanabe, Kenji , Taniguchi, Takashi , Neumaier, Daniel , Stampfer, Christoph
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4919897
Link: http://dx.doi.org/10.1063/1.4919897
Zum Text:
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recordid: aip_complete10.1063/1.4919897
title: Ultra-sensitive Hall sensors based on graphene encapsulated in hexagonal boron nitride
format: Article
creator:
  • Dauber, Jan
  • Sagade, Abhay A.
  • Oellers, Martin
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Neumaier, Daniel
  • Stampfer, Christoph
subjects:
  • Device Physics
ispartof: Applied Physics Letters, 11 May 2015, Vol.106(19)
description: The encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ Hz making our graphene sensors highly interesting for industrial applications.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4919897
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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subjectDevice Physics
descriptionThe encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ Hz making our graphene sensors highly interesting for industrial applications.
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descriptionThe encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ Hz making our graphene sensors highly interesting for industrial applications.
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abstractThe encapsulation of graphene in hexagonal boron nitride provides graphene on substrate with excellent material quality. Here, we present the fabrication and characterization of Hall sensor elements based on graphene boron nitride heterostructures, where we gain from high mobility and low charge carrier density at room temperature. We show a detailed device characterization including Hall effect measurements under vacuum and ambient conditions. We achieve a current- and voltage-related sensitivity of up to 5700 V/AT and 3 V/VT, respectively, outpacing state-of-the-art silicon and III/V Hall sensor devices. Finally, we extract a magnetic resolution limited by low frequency electric noise of less than 50 nT/ Hz making our graphene sensors highly interesting for industrial applications.
pubAIP Publishing LLC
doi10.1063/1.4919897
date2015-05-11