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Point contacts in encapsulated graphene

We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead... Full description

Journal Title: Applied Physics Letters 02 November 2015, Vol.107(18)
Main Author: Handschin, Clevin
Other Authors: Fülöp, Bálint , Makk, Péter , Blanter, Sofya , Weiss, Markus , Watanabe, Kenji , Taniguchi, Takashi , Csonka, Szabolcs , Schönenberger, Christian
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4935032
Link: http://dx.doi.org/10.1063/1.4935032
Zum Text:
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recordid: aip_complete10.1063/1.4935032
title: Point contacts in encapsulated graphene
format: Article
creator:
  • Handschin, Clevin
  • Fülöp, Bálint
  • Makk, Péter
  • Blanter, Sofya
  • Weiss, Markus
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Csonka, Szabolcs
  • Schönenberger, Christian
subjects:
  • Nanoscale Science And Technology
ispartof: Applied Physics Letters, 02 November 2015, Vol.107(18)
description: We present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4935032
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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ispartofApplied Physics Letters, 02 November 2015, Vol.107(18)
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descriptionWe present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.
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descriptionWe present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.
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abstractWe present a method to establish inner point contacts with dimensions as small as 100 nm on hexagonal boron nitride (hBN) encapsulated graphene heterostructures by pre-patterning the top-hBN in a separate step prior to dry-stacking. 2- and 4-terminal field effect measurements between different lead combinations are in qualitative agreement with an electrostatic model assuming point-like contacts. The measured contact resistances are 0.5–1.5 kΩ per contact, which is quite low for such small contacts. By applying a perpendicular magnetic field, an insulating behaviour in the quantum Hall regime was observed, as expected for inner contacts. The fabricated contacts are compatible with high mobility graphene structures and open up the field for the realization of several electron optical proposals.
pubAIP Publishing LLC
doi10.1063/1.4935032
date2015-11-02