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Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit

Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the ele... Full description

Journal Title: Applied Physics Letters 18 April 2016, Vol.108(16)
Main Author: Okuno, Yoshito
Other Authors: Vantasin, Sanpon , Yang, In-Sang , Son, Jangyup , Hong, Jongill , Tanaka, Yoshito Yannick , Nakata, Yasushi , Ozaki, Yukihiro , Naka, Nobuyuki
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4947559
Link: http://dx.doi.org/10.1063/1.4947559
Zum Text:
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recordid: aip_complete10.1063/1.4947559
title: Side-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit
format: Article
creator:
  • Okuno, Yoshito
  • Vantasin, Sanpon
  • Yang, In-Sang
  • Son, Jangyup
  • Hong, Jongill
  • Tanaka, Yoshito Yannick
  • Nakata, Yasushi
  • Ozaki, Yukihiro
  • Naka, Nobuyuki
subjects:
  • Nanoscale Science And Technology
ispartof: Applied Physics Letters, 18 April 2016, Vol.108(16)
description: Nanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 10 8  A/cm 2 ), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm −1 , which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C–C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4947559
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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titleSide-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit
creatorOkuno, Yoshito ; Vantasin, Sanpon ; Yang, In-Sang ; Son, Jangyup ; Hong, Jongill ; Tanaka, Yoshito Yannick ; Nakata, Yasushi ; Ozaki, Yukihiro ; Naka, Nobuyuki
ispartofApplied Physics Letters, 18 April 2016, Vol.108(16)
subjectNanoscale Science And Technology
descriptionNanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 10 8  A/cm 2 ), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm −1 , which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C–C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.
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descriptionNanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 10 8  A/cm 2 ), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm −1 , which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C–C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.
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titleSide-illuminated tip-enhanced Raman study of edge phonon in graphene at the electrical breakdown limit
authorOkuno, Yoshito ; Vantasin, Sanpon ; Yang, In-Sang ; Son, Jangyup ; Hong, Jongill ; Tanaka, Yoshito Yannick ; Nakata, Yasushi ; Ozaki, Yukihiro ; Naka, Nobuyuki
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abstractNanoscale integration of graphene into a circuit requires a stable performance under high current density. However, the effects of the current density that approach the electronic breakdown limit of graphene are not well understood. We explored the effects of a high current density, close to the electronic breakdown limit of 10 A/cm (∼3.0 × 10 8  A/cm 2 ), on graphene, using tip-enhanced Raman scattering. The results showed that the high current density induces Raman bands at 1456 and 1530 cm −1 , which were assigned to edge-phonon modes originating from zigzag and armchair edges. This led us to conclude that C–C bonds are cleaved due to the high current density, leaving edge structures behind, which were detected through the observation of localized phonons.
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