schliessen

Filtern

 

Bibliotheken

High mobility dry-transferred CVD bilayer graphene

We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG... Full description

Journal Title: Applied Physics Letters 26 June 2017, Vol.110(26)
Main Author: Schmitz, Michael
Other Authors: Engels, Stephan , Banszerus, Luca , Watanabe, Kenji , Taniguchi, Takashi , Stampfer, Christoph , Beschoten, Bernd
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4990390
Link: http://dx.doi.org/10.1063/1.4990390
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: aip_complete10.1063/1.4990390
title: High mobility dry-transferred CVD bilayer graphene
format: Article
creator:
  • Schmitz, Michael
  • Engels, Stephan
  • Banszerus, Luca
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Stampfer, Christoph
  • Beschoten, Bernd
subjects:
  • Nanoscale Science And Technology
ispartof: Applied Physics Letters, 26 June 2017, Vol.110(26)
description: We report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm 2 /(Vs) at 2 K and up to 40 000 cm 2 /(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.4990390
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


@attributes
ID1406626530
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1063/1.4990390
sourceidaip_complete
recordidTN_aip_complete10.1063/1.4990390
sourcesystemOther
pqid2072273325
display
typearticle
titleHigh mobility dry-transferred CVD bilayer graphene
creatorSchmitz, Michael ; Engels, Stephan ; Banszerus, Luca ; Watanabe, Kenji ; Taniguchi, Takashi ; Stampfer, Christoph ; Beschoten, Bernd
ispartofApplied Physics Letters, 26 June 2017, Vol.110(26)
subjectNanoscale Science And Technology
descriptionWe report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm 2 /(Vs) at 2 K and up to 40 000 cm 2 /(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.
languageeng
source
identifier
version5
lds50peer_reviewed
links
openurl$$Topenurl_article
backlink$$Uhttp://dx.doi.org/10.1063/1.4990390$$EView_source_record
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Schmitz, Michael
1Engels, Stephan
2Banszerus, Luca
3Watanabe, Kenji
4Taniguchi, Takashi
5Stampfer, Christoph
6Beschoten, Bernd
titleHigh mobility dry-transferred CVD bilayer graphene
subjectNanoscale Science And Technology
general
0English
1© 2017 Author(s) (AIP)
2AIP Publishing LLC
3AIP Journals
410.1063/1.4990390
sourceidaip_complete
recordidaip_complete10.1063/1.4990390
issn
00003-6951
11077-3118
200036951
310773118
rsrctypearticle
searchscopeaip_journals
scopeaip_journals
descriptionWe report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm 2 /(Vs) at 2 K and up to 40 000 cm 2 /(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.
creationdate2017
startdate20170626
enddate20170626
addtitleApplied Physics Letters
lsr40Applied Physics Letters, 26 June 2017, Vol.110 (26)
citationvol 110 issue 26
lsr30VSR-Enriched:[pqid, orcidid]
sort
titleHigh mobility dry-transferred CVD bilayer graphene
authorSchmitz, Michael ; Engels, Stephan ; Banszerus, Luca ; Watanabe, Kenji ; Taniguchi, Takashi ; Stampfer, Christoph ; Beschoten, Bernd
creationdate20170626
lso0120170626
facets
frbrgroupid8538089829980546761
frbrtype5
newrecords20170705
languageeng
creationdate2017
topicNanoscale Science And Technology
collectionAIP Journals
prefilterarticles
rsrctypearticles
creatorcontrib
0Schmitz, Michael
1Engels, Stephan
2Banszerus, Luca
3Watanabe, Kenji
4Taniguchi, Takashi
5Stampfer, Christoph
6Beschoten, Bernd
jtitleApplied Physics Letters
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Schmitz
1Engels
2Banszerus
3Watanabe
4Taniguchi
5Stampfer
6Beschoten
aufirstMichael ; Stephan ; Luca ; Kenji ; Takashi ; Christoph ; Bernd
auinitM
au
0Schmitz, Michael
1Engels, Stephan
2Banszerus, Luca
3Watanabe, Kenji
4Taniguchi, Takashi
5Stampfer, Christoph
6Beschoten, Bernd
atitleHigh mobility dry-transferred CVD bilayer graphene
jtitleApplied Physics Letters
stitleAppl. Phys. Lett.
risdate20170626
volume110
issue26
issn0003-6951
eissn1077-3118
formatjournal
genrearticle
ristypeJOUR
abstractWe report on the fabrication and characterization of high-quality chemical vapor-deposited (CVD) bilayer graphene (BLG). In particular, we demonstrate that CVD-grown BLG can be detached mechanically from the copper foil by a hexagonal boron nitride (hBN) crystal after oxidation of the copper-to-BLG interface. Confocal Raman spectroscopy reveals an AB-stacking order of the BLG crystals and a high structural quality. From transport measurements on fully encapsulated hBN/BLG/hBN Hall bar devices, we extract charge carrier mobilities up to 180 000 cm 2 /(Vs) at 2 K and up to 40 000 cm 2 /(Vs) at 300 K, outperforming state-of-the-art CVD bilayer graphene devices. Moreover, we show an on-off ratio of more than 10 000 and a band gap opening with values of up to 15 meV for a displacement field of 0.2 V/nm in such CVD grown BLG.
pubAIP Publishing LLC
doi10.1063/1.4990390
orcidid0000-0003-3701-8119
date2017-06-26