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Annealing effect on laser pulse-induced THz wave emission in Ta/CoFeB/MgO films

Laser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 ti... Full description

Journal Title: Applied Physics Letters 04 September 2017, Vol.111(10)
Main Author: Sasaki, Y.
Other Authors: Suzuki, K. Z. , Mizukami, S.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5001696
Link: http://dx.doi.org/10.1063/1.5001696
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recordid: aip_complete10.1063/1.5001696
title: Annealing effect on laser pulse-induced THz wave emission in Ta/CoFeB/MgO films
format: Article
creator:
  • Sasaki, Y.
  • Suzuki, K. Z.
  • Mizukami, S.
subjects:
  • Magnetics And Spintronics
ispartof: Applied Physics Letters, 04 September 2017, Vol.111(10)
description: Laser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 times by annealing at 300 °C. A correlation was found in the annealing dependence between saturation magnetization, conductivity, and THz emission intensity. The origin of the enhancement of THz emission intensity due to annealing was discussed in terms of the increase in the mean free path of majority spin hot electrons in the CoFeB layer with crystallization due to the annealing.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5001696
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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descriptionLaser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 times by annealing at 300 °C. A correlation was found in the annealing dependence between saturation magnetization, conductivity, and THz emission intensity. The origin of the enhancement of THz emission intensity due to annealing was discussed in terms of the increase in the mean free path of majority spin hot electrons in the CoFeB layer with crystallization due to the annealing.
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descriptionLaser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 times by annealing at 300 °C. A correlation was found in the annealing dependence between saturation magnetization, conductivity, and THz emission intensity. The origin of the enhancement of THz emission intensity due to annealing was discussed in terms of the increase in the mean free path of majority spin hot electrons in the CoFeB layer with crystallization due to the annealing.
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abstractLaser-induced terahertz (THz) emission in Ta/CoFeB/MgO films with various thicknesses of CoFeB and for various annealing temperatures was studied. The THz emission intensity exhibited its maximum value for a CoFeB layer thickness of approximately 1.0 nm, and this maximum value was enhanced by 1.5 times by annealing at 300 °C. A correlation was found in the annealing dependence between saturation magnetization, conductivity, and THz emission intensity. The origin of the enhancement of THz emission intensity due to annealing was discussed in terms of the increase in the mean free path of majority spin hot electrons in the CoFeB layer with crystallization due to the annealing.
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