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Effects of partial substitution of cations on electrical properties of Mn-Co-Ni-O thin films

Mn-Co-Ni-O thin films have important usage values, and their extensive applications require further improvement of the electrical properties. The cations of Mn-Co-Ni-O thin films were partially substituted by Sb, Rh, Sc, and Cu elements individually, and the Cu-incorporated thin film was found to ha... Full description

Journal Title: Applied Physics Letters 27 November 2017, Vol.111(22)
Main Author: Zhang, Fei
Other Authors: Huang, Zhiming
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5004035
Link: http://dx.doi.org/10.1063/1.5004035
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recordid: aip_complete10.1063/1.5004035
title: Effects of partial substitution of cations on electrical properties of Mn-Co-Ni-O thin films
format: Article
creator:
  • Zhang, Fei
  • Huang, Zhiming
subjects:
  • Semiconductors
ispartof: Applied Physics Letters, 27 November 2017, Vol.111(22)
description: Mn-Co-Ni-O thin films have important usage values, and their extensive applications require further improvement of the electrical properties. The cations of Mn-Co-Ni-O thin films were partially substituted by Sb, Rh, Sc, and Cu elements individually, and the Cu-incorporated thin film was found to have the best electrical property to be applicable. In order to improve the anti-aging property of the Cu-incorporated thin film, the Sc element was added into it, which effectively slowed down the aging rate, and the mechanisms were explained. According to the analysis of XPS spectra, it was found that the conduction mechanism was still the electron hopping conductance between Mn 3+ and Mn 4+ ions after the additional substitution of Cu or Cu/Sc elements in Mn-Co-Ni-O thin films. The Raman spectral analysis indicated that the incorporated Sc element was mainly Sc 3+ ions distributed in the octahedron. However, the incorporated Cu element was mainly Cu 1+ ions distributed in the tetrahedron.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5004035
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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descriptionMn-Co-Ni-O thin films have important usage values, and their extensive applications require further improvement of the electrical properties. The cations of Mn-Co-Ni-O thin films were partially substituted by Sb, Rh, Sc, and Cu elements individually, and the Cu-incorporated thin film was found to have the best electrical property to be applicable. In order to improve the anti-aging property of the Cu-incorporated thin film, the Sc element was added into it, which effectively slowed down the aging rate, and the mechanisms were explained. According to the analysis of XPS spectra, it was found that the conduction mechanism was still the electron hopping conductance between Mn 3+ and Mn 4+ ions after the additional substitution of Cu or Cu/Sc elements in Mn-Co-Ni-O thin films. The Raman spectral analysis indicated that the incorporated Sc element was mainly Sc 3+ ions distributed in the octahedron. However, the incorporated Cu element was mainly Cu 1+ ions distributed in the tetrahedron.
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descriptionMn-Co-Ni-O thin films have important usage values, and their extensive applications require further improvement of the electrical properties. The cations of Mn-Co-Ni-O thin films were partially substituted by Sb, Rh, Sc, and Cu elements individually, and the Cu-incorporated thin film was found to have the best electrical property to be applicable. In order to improve the anti-aging property of the Cu-incorporated thin film, the Sc element was added into it, which effectively slowed down the aging rate, and the mechanisms were explained. According to the analysis of XPS spectra, it was found that the conduction mechanism was still the electron hopping conductance between Mn 3+ and Mn 4+ ions after the additional substitution of Cu or Cu/Sc elements in Mn-Co-Ni-O thin films. The Raman spectral analysis indicated that the incorporated Sc element was mainly Sc 3+ ions distributed in the octahedron. However, the incorporated Cu element was mainly Cu 1+ ions distributed in the tetrahedron.
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abstractMn-Co-Ni-O thin films have important usage values, and their extensive applications require further improvement of the electrical properties. The cations of Mn-Co-Ni-O thin films were partially substituted by Sb, Rh, Sc, and Cu elements individually, and the Cu-incorporated thin film was found to have the best electrical property to be applicable. In order to improve the anti-aging property of the Cu-incorporated thin film, the Sc element was added into it, which effectively slowed down the aging rate, and the mechanisms were explained. According to the analysis of XPS spectra, it was found that the conduction mechanism was still the electron hopping conductance between Mn 3+ and Mn 4+ ions after the additional substitution of Cu or Cu/Sc elements in Mn-Co-Ni-O thin films. The Raman spectral analysis indicated that the incorporated Sc element was mainly Sc 3+ ions distributed in the octahedron. However, the incorporated Cu element was mainly Cu 1+ ions distributed in the tetrahedron.
pubAIP Publishing LLC
doi10.1063/1.5004035
date2017-11-27