schliessen

Filtern

 

Bibliotheken

Gate-tunable quantum dot in a high quality single layer MoS 2 van der Waals heterostructure

We have fabricated an encapsulated monolayer MoS 2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm 2 /Vs at a density of 7 × 10 12  cm −2 at a temperature of 1.7 K. Shubnikov-de Haas osci... Full description

Journal Title: Applied Physics Letters 19 March 2018, Vol.112(12)
Main Author: Pisoni, Riccardo
Other Authors: Lei, Zijin , Back, Patrick , Eich, Marius , Overweg, Hiske , Lee, Yongjin , Watanabe, Kenji , Taniguchi, Takashi , Ihn, Thomas , Ensslin, Klaus
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5021113
Link: http://dx.doi.org/10.1063/1.5021113
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: aip_complete10.1063/1.5021113
title: Gate-tunable quantum dot in a high quality single layer MoS 2 van der Waals heterostructure
format: Article
creator:
  • Pisoni, Riccardo
  • Lei, Zijin
  • Back, Patrick
  • Eich, Marius
  • Overweg, Hiske
  • Lee, Yongjin
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Ihn, Thomas
  • Ensslin, Klaus
subjects:
  • Nanoscale Science And Technology
ispartof: Applied Physics Letters, 19 March 2018, Vol.112(12)
description: We have fabricated an encapsulated monolayer MoS 2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm 2 /Vs at a density of 7 × 10 12  cm −2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS 2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5021113
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


@attributes
ID302792854
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1063/1.5021113
sourceidaip_complete
recordidTN_aip_complete10.1063/1.5021113
sourcesystemOther
pqid2071852657
display
typearticle
titleGate-tunable quantum dot in a high quality single layer MoS 2 van der Waals heterostructure
creatorPisoni, Riccardo ; Lei, Zijin ; Back, Patrick ; Eich, Marius ; Overweg, Hiske ; Lee, Yongjin ; Watanabe, Kenji ; Taniguchi, Takashi ; Ihn, Thomas ; Ensslin, Klaus
ispartofApplied Physics Letters, 19 March 2018, Vol.112(12)
subjectNanoscale Science And Technology
descriptionWe have fabricated an encapsulated monolayer MoS 2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm 2 /Vs at a density of 7 × 10 12  cm −2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS 2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
languageeng
source
identifier
version4
lds50peer_reviewed
links
openurl$$Topenurl_article
backlink$$Uhttp://dx.doi.org/10.1063/1.5021113$$EView_source_record
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Pisoni, Riccardo
1Lei, Zijin
2Back, Patrick
3Eich, Marius
4Overweg, Hiske
5Lee, Yongjin
6Watanabe, Kenji
7Taniguchi, Takashi
8Ihn, Thomas
9Ensslin, Klaus
titleGate-tunable quantum dot in a high quality single layer MoS 2 van der Waals heterostructure
subjectNanoscale Science And Technology
general
0English
1© 2018 Author(s) (AIP)
2AIP Publishing LLC
3AIP Journals
410.1063/1.5021113
sourceidaip_complete
recordidaip_complete10.1063/1.5021113
issn
00003-6951
11077-3118
200036951
310773118
rsrctypearticle
searchscopeaip_journals
scopeaip_journals
descriptionWe have fabricated an encapsulated monolayer MoS 2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm 2 /Vs at a density of 7 × 10 12  cm −2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS 2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
creationdate2018
startdate20180319
enddate20180319
addtitleApplied Physics Letters
lsr40Applied Physics Letters, 19 March 2018, Vol.112 (12)
citationvol 112 issue 12
lsr30VSR-Enriched:[pqid, orcidid]
sort
titleGate-tunable quantum dot in a high quality single layer MoS 2 van der Waals heterostructure
authorPisoni, Riccardo ; Lei, Zijin ; Back, Patrick ; Eich, Marius ; Overweg, Hiske ; Lee, Yongjin ; Watanabe, Kenji ; Taniguchi, Takashi ; Ihn, Thomas ; Ensslin, Klaus
creationdate20180319
lso0120180319
facets
frbrgroupid9174208095741625227
frbrtype5
newrecords20180327
languageeng
creationdate2018
topicNanoscale Science And Technology
collectionAIP Journals
prefilterarticles
rsrctypearticles
creatorcontrib
0Pisoni, Riccardo
1Lei, Zijin
2Back, Patrick
3Eich, Marius
4Overweg, Hiske
5Lee, Yongjin
6Watanabe, Kenji
7Taniguchi, Takashi
8Ihn, Thomas
9Ensslin, Klaus
jtitleApplied Physics Letters
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Pisoni
1Lei
2Back
3Eich
4Overweg
5Lee
6Watanabe
7Taniguchi
8Ihn
9Ensslin
aufirstRiccardo ; Zijin ; Patrick ; Marius ; Hiske ; Yongjin ; Kenji ; Takashi ; Thomas ; Klaus
auinitR
au
0Pisoni, Riccardo
1Lei, Zijin
2Back, Patrick
3Eich, Marius
4Overweg, Hiske
5Lee, Yongjin
6Watanabe, Kenji
7Taniguchi, Takashi
8Ihn, Thomas
9Ensslin, Klaus
atitleGate-tunable quantum dot in a high quality single layer MoS 2 van der Waals heterostructure
jtitleApplied Physics Letters
stitleAppl. Phys. Lett.
risdate20180319
volume112
issue12
issn0003-6951
eissn1077-3118
formatjournal
genrearticle
ristypeJOUR
abstractWe have fabricated an encapsulated monolayer MoS 2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm 2 /Vs at a density of 7 × 10 12  cm −2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS 2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.
pubAIP Publishing LLC
doi10.1063/1.5021113
orcidid0000-0003-3701-8119
date2018-03-19