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Interface electrical properties between MCNO thin film and organic compounds

The Mn-Co-Ni-O (MCNO) thin film deposited on indium tin oxide (ITO) glass has a bandgap of 1.52 eV and can replace WO 3 , MoO 3 , or V 2 O 5 films as the electron transport layer (ETL). The PN junctions can be formed for MCNO/(4,4′-Bis(9H-carbazol-9-yl) biphenyl) and MCNO/(4,4′,4′′-Tri(9-carbazoyl)... Full description

Journal Title: Applied Physics Letters 06 August 2018, Vol.113(6)
Main Author: Zhang, Fei
Other Authors: Huang, Zhiming
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5041773
Link: http://dx.doi.org/10.1063/1.5041773
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recordid: aip_complete10.1063/1.5041773
title: Interface electrical properties between MCNO thin film and organic compounds
format: Article
creator:
  • Zhang, Fei
  • Huang, Zhiming
subjects:
  • Surfaces And Interfaces
ispartof: Applied Physics Letters, 06 August 2018, Vol.113(6)
description: The Mn-Co-Ni-O (MCNO) thin film deposited on indium tin oxide (ITO) glass has a bandgap of 1.52 eV and can replace WO 3 , MoO 3 , or V 2 O 5 films as the electron transport layer (ETL). The PN junctions can be formed for MCNO/(4,4′-Bis(9H-carbazol-9-yl) biphenyl) and MCNO/(4,4′,4′′-Tri(9-carbazoyl) triphenylamine) multi-layers, which can improve the electrical properties under both positive and negative voltages. There is a transition point for the curves of ( R v+ - R v− )/ R v+ ratio versus voltage. It is reasonable to exploit the range below this point, which is the high-efficiency working scope for the MCNO thin film as the ETL layer, and its property of electron extraction can be enhanced by the PN junction. (6,6)-Phenyl-C61-butyric Acid Methyl Ester (PCBM) is an n-type semiconductor, and the ITO/MCNO/PCBM multi-layers suffer no effect of the built-in electric field.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5041773
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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descriptionThe Mn-Co-Ni-O (MCNO) thin film deposited on indium tin oxide (ITO) glass has a bandgap of 1.52 eV and can replace WO 3 , MoO 3 , or V 2 O 5 films as the electron transport layer (ETL). The PN junctions can be formed for MCNO/(4,4′-Bis(9H-carbazol-9-yl) biphenyl) and MCNO/(4,4′,4′′-Tri(9-carbazoyl) triphenylamine) multi-layers, which can improve the electrical properties under both positive and negative voltages. There is a transition point for the curves of ( R v+ - R v− )/ R v+ ratio versus voltage. It is reasonable to exploit the range below this point, which is the high-efficiency working scope for the MCNO thin film as the ETL layer, and its property of electron extraction can be enhanced by the PN junction. (6,6)-Phenyl-C61-butyric Acid Methyl Ester (PCBM) is an n-type semiconductor, and the ITO/MCNO/PCBM multi-layers suffer no effect of the built-in electric field.
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descriptionThe Mn-Co-Ni-O (MCNO) thin film deposited on indium tin oxide (ITO) glass has a bandgap of 1.52 eV and can replace WO 3 , MoO 3 , or V 2 O 5 films as the electron transport layer (ETL). The PN junctions can be formed for MCNO/(4,4′-Bis(9H-carbazol-9-yl) biphenyl) and MCNO/(4,4′,4′′-Tri(9-carbazoyl) triphenylamine) multi-layers, which can improve the electrical properties under both positive and negative voltages. There is a transition point for the curves of ( R v+ - R v− )/ R v+ ratio versus voltage. It is reasonable to exploit the range below this point, which is the high-efficiency working scope for the MCNO thin film as the ETL layer, and its property of electron extraction can be enhanced by the PN junction. (6,6)-Phenyl-C61-butyric Acid Methyl Ester (PCBM) is an n-type semiconductor, and the ITO/MCNO/PCBM multi-layers suffer no effect of the built-in electric field.
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abstractThe Mn-Co-Ni-O (MCNO) thin film deposited on indium tin oxide (ITO) glass has a bandgap of 1.52 eV and can replace WO 3 , MoO 3 , or V 2 O 5 films as the electron transport layer (ETL). The PN junctions can be formed for MCNO/(4,4′-Bis(9H-carbazol-9-yl) biphenyl) and MCNO/(4,4′,4′′-Tri(9-carbazoyl) triphenylamine) multi-layers, which can improve the electrical properties under both positive and negative voltages. There is a transition point for the curves of ( R v+ - R v− )/ R v+ ratio versus voltage. It is reasonable to exploit the range below this point, which is the high-efficiency working scope for the MCNO thin film as the ETL layer, and its property of electron extraction can be enhanced by the PN junction. (6,6)-Phenyl-C61-butyric Acid Methyl Ester (PCBM) is an n-type semiconductor, and the ITO/MCNO/PCBM multi-layers suffer no effect of the built-in electric field.
pubAIP Publishing LLC
doi10.1063/1.5041773
date2018-08-06