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High-temperature electronic devices enabled by hBN-encapsulated graphene

Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced deg... Full description

Journal Title: Applied Physics Letters 25 March 2019, Vol.114(12)
Main Author: Šiškins, Makars
Other Authors: Mullan, Ciaran , Son, Seok-Kyun , Yin, Jun , Watanabe, Kenji , Taniguchi, Takashi , Ghazaryan, Davit , Novoselov, Kostya S. , Mishchenko, Artem
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5088587
Link: http://dx.doi.org/10.1063/1.5088587
Zum Text:
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recordid: aip_complete10.1063/1.5088587
title: High-temperature electronic devices enabled by hBN-encapsulated graphene
format: Article
creator:
  • Šiškins, Makars
  • Mullan, Ciaran
  • Son, Seok-Kyun
  • Yin, Jun
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Ghazaryan, Davit
  • Novoselov, Kostya S.
  • Mishchenko, Artem
subjects:
  • Nanoscale Science And Technology
ispartof: Applied Physics Letters, 25 March 2019, Vol.114(12)
description: Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5088587
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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creatorŠiškins, Makars ; Mullan, Ciaran ; Son, Seok-Kyun ; Yin, Jun ; Watanabe, Kenji ; Taniguchi, Takashi ; Ghazaryan, Davit ; Novoselov, Kostya S. ; Mishchenko, Artem
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subjectNanoscale Science And Technology
descriptionNumerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
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descriptionNumerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
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abstractNumerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).
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date2019-03-25