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Bright electroluminescence in ambient conditions from WSe 2 p-n diodes using pulsed injection

Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require... Full description

Journal Title: Applied Physics Letters 01 July 2019, Vol.115(1)
Main Author: Han, Kevin
Other Authors: Ahn, Geun Ho , Cho, Joy , Lien, Der-Hsien , Amani, Matin , Desai, Sujay B. , Zhang, George , Kim, Hyungjin , Gupta, Niharika , Javey, Ali , Wu, Ming C.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5100306
Link: http://dx.doi.org/10.1063/1.5100306
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recordid: aip_complete10.1063/1.5100306
title: Bright electroluminescence in ambient conditions from WSe 2 p-n diodes using pulsed injection
format: Article
creator:
  • Han, Kevin
  • Ahn, Geun Ho
  • Cho, Joy
  • Lien, Der-Hsien
  • Amani, Matin
  • Desai, Sujay B.
  • Zhang, George
  • Kim, Hyungjin
  • Gupta, Niharika
  • Javey, Ali
  • Wu, Ming C.
subjects:
  • Photonics And Optoelectronics
ispartof: Applied Physics Letters, 01 July 2019, Vol.115(1)
description: Transition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe 2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.5100306
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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titleBright electroluminescence in ambient conditions from WSe 2 p-n diodes using pulsed injection
creatorHan, Kevin ; Ahn, Geun Ho ; Cho, Joy ; Lien, Der-Hsien ; Amani, Matin ; Desai, Sujay B. ; Zhang, George ; Kim, Hyungjin ; Gupta, Niharika ; Javey, Ali ; Wu, Ming C.
ispartofApplied Physics Letters, 01 July 2019, Vol.115(1)
subjectPhotonics And Optoelectronics
descriptionTransition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe 2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.
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descriptionTransition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe 2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.
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titleBright electroluminescence in ambient conditions from WSe 2 p-n diodes using pulsed injection
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abstractTransition metal dichalcogenide (TMDC) monolayers are promising materials for next-generation nanoscale optoelectronics, including high-speed light sources and detectors. However, most past reports on TMDC light-emitting diodes are limited to operation in high vacuum, while most applications require operation under ambient conditions. In this work, we study the time-resolved electroluminescence of monolayer WSe 2 p-n junctions under ambient conditions and identify the decay in current over time as the main issue preventing stable device operation. We show that pulsed voltage bias overcomes this issue and results in bright electroluminescence under ambient conditions. This is achieved in a simple single-gate structure, without the use of dual gates, heterostructures, or doping methods. Internal quantum efficiency of electroluminescence reaches ∼1%, close to the photoluminescence quantum efficiency, indicating efficient exciton formation with injected carriers. Emission intensity is stable over hours of device operation. Finally, our device exhibits ∼15 ns rise and fall times, the fastest direct modulation speed reported for TMDC light-emitting diodes.
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date2019-07-01