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Space‐charge‐like scattering in epitaxial GaAs from low temperature and high pressure Hall measurements

The Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77< T

Journal Title: Applied Physics Letters 15 January 1985, Vol.46(2), pp.159-161
Main Author: Saxena, A. K.
Other Authors: Sinha, A. K. , Adams, A. R.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.95721
Link: http://dx.doi.org/10.1063/1.95721
Zum Text:
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recordid: aip_complete10.1063/1.95721
title: Space‐charge‐like scattering in epitaxial GaAs from low temperature and high pressure Hall measurements
format: Article
creator:
  • Saxena, A. K.
  • Sinha, A. K.
  • Adams, A. R.
subjects:
  • Niedrigtemperatur
  • Metallorganische Gasphasenabscheidung
  • Galliumarsenid
  • Drei-Fuenf-Verbindung
  • Hall-Effekt
  • Ladungstraegerbeweglichkeit
  • Fluessigphasenepitaxie
  • Molekularstrahlepitaxie
  • Raumladung
  • Epitaxialschicht
  • Halbleiterschicht
  • Hall-Beweglichkeit
  • Elektronenbeweglichkeit
  • Gasphasenepitaxie
  • Metallorganische Verbindung
  • Temperaturabhaengigkeit
  • Druckabhaengigkeit
  • Elektronenleitung
  • Elektrische Leitfaehigkeit
  • Halbleiterepitaxialschicht
  • Hydrostatischer Druck
ispartof: Applied Physics Letters, 15 January 1985, Vol.46(2), pp.159-161
description: The Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77< T
language: eng
source:
identifier: ISSN: 0003-6951 ; E-ISSN: 1077-3118 ; DOI: 10.1063/1.95721
fulltext: fulltext
issn:
  • 0003-6951
  • 1077-3118
  • 00036951
  • 10773118
url: Link


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titleSpace‐charge‐like scattering in epitaxial GaAs from low temperature and high pressure Hall measurements
creatorSaxena, A. K. ; Sinha, A. K. ; Adams, A. R.
ispartofApplied Physics Letters, 15 January 1985, Vol.46(2), pp.159-161
descriptionThe Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77< T <300 K) and hydrostatic pressure (0–8 kbar). The analysis of the data shows that in LPE and VPE crystals, the mobilities are lowered due to space‐charge scattering (μ SC ∝ m *−1/2 T −1/2 ) while in MOCVD and MBE samples, a space‐charge‐like limited mobility (μ UN ∝ m *− n T −1/2 ) must be included. The value of the exponent n has been found to be 1 for MBE and 2 for MOCVD grown samples. It has been concluded that increasing impurity gradation in these layers is responsible for higher values of n . The pressure coefficient of electron mass in GaAs is determined to be 5.2×10 m −4   m * /kbar . The model of central cell scattering due to carbon acceptors fails to account for the experimental data reported in this paper.
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subjectNiedrigtemperatur ; Metallorganische Gasphasenabscheidung ; Galliumarsenid ; Drei-Fuenf-Verbindung ; Hall-Effekt ; Ladungstraegerbeweglichkeit ; Fluessigphasenepitaxie ; Molekularstrahlepitaxie ; Raumladung ; Epitaxialschicht ; Halbleiterschicht ; Hall-Beweglichkeit ; Elektronenbeweglichkeit ; Gasphasenepitaxie ; Metallorganische Verbindung ; Temperaturabhaengigkeit ; Druckabhaengigkeit ; Elektronenleitung ; Elektrische Leitfaehigkeit ; Halbleiterepitaxialschicht ; Hydrostatischer Druck;
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descriptionThe Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77< T <300 K) and hydrostatic pressure (0–8 kbar). The analysis of the data shows that in LPE and VPE crystals, the mobilities are lowered due to space‐charge scattering (μ SC ∝ m *−1/2 T −1/2 ) while in MOCVD and MBE samples, a space‐charge‐like limited mobility (μ UN ∝ m *− n T −1/2 ) must be included. The value of the exponent n has been found to be 1 for MBE and 2 for MOCVD grown samples. It has been concluded that increasing impurity gradation in these layers is responsible for higher values of n . The pressure coefficient of electron mass in GaAs is determined to be 5.2×10 m −4   m * /kbar . The model of central cell scattering due to carbon acceptors fails to account for the experimental data reported in this paper.
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abstractThe Hall electron mobility in GaAs grown by vapor phase epitaxy (VPE), liquid phase epitaxy (LPE), molecular beam epitaxy (MBE), and metalorganic chemical vapor deposition (MOCVD) has been studied both as a function of temperature (77< T <300 K) and hydrostatic pressure (0–8 kbar). The analysis of the data shows that in LPE and VPE crystals, the mobilities are lowered due to space‐charge scattering (μ SC ∝ m *−1/2 T −1/2 ) while in MOCVD and MBE samples, a space‐charge‐like limited mobility (μ UN ∝ m *− n T −1/2 ) must be included. The value of the exponent n has been found to be 1 for MBE and 2 for MOCVD grown samples. It has been concluded that increasing impurity gradation in these layers is responsible for higher values of n . The pressure coefficient of electron mass in GaAs is determined to be 5.2×10 m −4   m * /kbar . The model of central cell scattering due to carbon acceptors fails to account for the experimental data reported in this paper.
pubAmerican Institute of Physics
doi10.1063/1.95721