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Electrostatically induced quantum point contact in bilayer graphene

We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 - 100 k$\Omega$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute th... Full description

Journal Title: Nano Letters 18 (2018) 553-559
Main Author: Overweg, Hiske
Other Authors: Eggimann, Hannah , Chen, Xi , Slizovskiy, Sergey , Eich, Marius , Pisoni, Riccardo , Lee, Yongjin , Rickhaus, Peter , Watanabe, Kenji , Taniguchi, Takashi , Fal'Ko, Vladimir , Ihn, Thomas , Ensslin, Klaus
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ID: Arxiv ID: 1707.09282
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recordid: arxiv1707.09282
title: Electrostatically induced quantum point contact in bilayer graphene
format: Article
creator:
  • Overweg, Hiske
  • Eggimann, Hannah
  • Chen, Xi
  • Slizovskiy, Sergey
  • Eich, Marius
  • Pisoni, Riccardo
  • Lee, Yongjin
  • Rickhaus, Peter
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Fal'Ko, Vladimir
  • Ihn, Thomas
  • Ensslin, Klaus
subjects:
  • Condensed Matter - Mesoscale And Nanoscale Physics
ispartof: Nano Letters 18 (2018) 553-559
description: We report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 - 100 k$\Omega$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $\Delta G = 2~e^2/h$ and $\Delta G = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
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identifier: Arxiv ID: 1707.09282
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@attributes
ID857537244
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid1707.09282
sourceidarxiv
recordidTN_arxiv1707.09282
sourcesystemOther
pqid1982844961
display
typearticle
titleElectrostatically induced quantum point contact in bilayer graphene
creatorOverweg, Hiske ; Eggimann, Hannah ; Chen, Xi ; Slizovskiy, Sergey ; Eich, Marius ; Pisoni, Riccardo ; Lee, Yongjin ; Rickhaus, Peter ; Watanabe, Kenji ; Taniguchi, Takashi ; Fal'Ko, Vladimir ; Ihn, Thomas ; Ensslin, Klaus
ispartofNano Letters 18 (2018) 553-559
identifierArxiv ID: 1707.09282
subjectCondensed Matter - Mesoscale And Nanoscale Physics
descriptionWe report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 - 100 k$\Omega$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $\Delta G = 2~e^2/h$ and $\Delta G = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
source
version5
oafree_for_read
lds50peer_reviewed
links
openurl$$Topenurl_article
linktorsrc$$Uhttp://arxiv.org/abs/1707.09282$$EView_record_at _arXiv
openurlfulltext$$Topenurlfull_article
search
creatorcontrib
0Overweg, Hiske
1Eggimann, Hannah
2Chen, Xi
3Slizovskiy, Sergey
4Eich, Marius
5Pisoni, Riccardo
6Lee, Yongjin
7Rickhaus, Peter
8Watanabe, Kenji
9Taniguchi, Takashi
10Fal'ko, Vladimir
11Ihn, Thomas
12Ensslin, Klaus
titleElectrostatically induced quantum point contact in bilayer graphene
descriptionWe report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 - 100 k$\Omega$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $\Delta G = 2~e^2/h$ and $\Delta G = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
subjectCondensed Matter - Mesoscale and Nanoscale Physics
general
010.1021/acs.nanolett.7b04666
1Cornell University
2Arxiv ID: 1707.09282
sourceidarxiv
recordidarxiv1707.09282
rsrctypearticle
creationdate
020170728
12017
220180116
32018
recordtypearticle
searchscope
0arxiv
1Arxiv
scope
0arxiv
1Arxiv
lsr30VSR-Enriched:[vol, pqid, issn, issue, eissn, pages]
sort
titleElectrostatically induced quantum point contact in bilayer graphene
authorOverweg, Hiske ; Eggimann, Hannah ; Chen, Xi ; Slizovskiy, Sergey ; Eich, Marius ; Pisoni, Riccardo ; Lee, Yongjin ; Rickhaus, Peter ; Watanabe, Kenji ; Taniguchi, Takashi ; Fal'Ko, Vladimir ; Ihn, Thomas ; Ensslin, Klaus
creationdate20170728
facets
frbrgroupid1997066222034499710
frbrtype5
newrecords20170801
creationdate2017
topicCondensed Matter–Mesoscale And Nanoscale Physics
collectionarXiv
prefilterarticles
rsrctypearticles
creatorcontrib
0Overweg, Hiske
1Eggimann, Hannah
2Chen, Xi
3Slizovskiy, Sergey
4Eich, Marius
5Pisoni, Riccardo
6Lee, Yongjin
7Rickhaus, Peter
8Watanabe, Kenji
9Taniguchi, Takashi
10Fal'Ko, Vladimir
11Ihn, Thomas
12Ensslin, Klaus
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext_linktorsrc
addata
aulast
0Overweg
1Eggimann
2Chen
3Slizovskiy
4Eich
5Pisoni
6Lee
7Rickhaus
8Watanabe
9Taniguchi
10Fal'ko
11Ihn
12Ensslin
aufirst
0Hiske
1Hannah
2Xi
3Sergey
4Marius
5Riccardo
6Yongjin
7Peter
8Kenji
9Takashi
10Vladimir
11Thomas
12Klaus
au
0Overweg, Hiske
1Eggimann, Hannah
2Chen, Xi
3Slizovskiy, Sergey
4Eich, Marius
5Pisoni, Riccardo
6Lee, Yongjin
7Rickhaus, Peter
8Watanabe, Kenji
9Taniguchi, Takashi
10Fal'ko, Vladimir
11Ihn, Thomas
12Ensslin, Klaus
atitleElectrostatically induced quantum point contact in bilayer graphene
risdate20170728
genrearticle
ristypeJOUR
abstractWe report the fabrication of electrostatically defined nanostructures in encapsulated bilayer graphene, with leakage resistances below depletion gates as high as $R \sim 10~$G$\Omega$. This exceeds previously reported values of $R =~$10 - 100 k$\Omega$.\cite{Zou2010,Yan2010,Zhu2016a} We attribute this improvement to the use of a graphite back gate. We realize two split gate devices which define an electronic channel on the scale of the Fermi-wavelength. A channel gate covering the gap between the split gates varies the charge carrier density in the channel. We observe device-dependent conductance quantization of $\Delta G = 2~e^2/h$ and $\Delta G = 4~e^2/h$. In quantizing magnetic fields normal to the sample plane, we recover the four- fold Landau level degeneracy of bilayer graphene. Unexpected mode crossings appear at the crossover between zero magnetic field and the quantum Hall regime.
doi10.1021/acs.nanolett.7b04666
lad21arXiv.org:1707.09282
volume18
issue1
pages553-559
issn15306984
eissn15306992
oafree_for_read
date2017-07-28