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Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells

This paper describes results of our study aimed at understanding mechanism (s) of dislocation generation and propagation in multi-crystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distribu... Full description

Journal Title: Solid state phenomena 2013-10-07, Vol.205-206, p.55-64
Main Author: Seacrist, Mike
Other Authors: Deshpande, Aditya , Sopori, Bhushan , Appel, Jesse , Devayajanam, Srinivas , Binns, Jeff , Mehta, Vishal , Shi, Gang , Chen, J
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Alma/SFX Local Collection
Publisher: United States
ID: ISSN: 1012-0394
Link: https://www.osti.gov/biblio/1260890
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recordid: cdi_osti_scitechconnect_1260890
title: Defect Generation and Propagation in Mc-Si Ingots: Influence on the Performance of Solar Cells
format: Article
creator:
  • Seacrist, Mike
  • Deshpande, Aditya
  • Sopori, Bhushan
  • Appel, Jesse
  • Devayajanam, Srinivas
  • Binns, Jeff
  • Mehta, Vishal
  • Shi, Gang
  • Chen, J
subjects:
  • defects
  • dislocations
  • MATERIALS SCIENCE
  • network model
  • silicon
  • solar cell
  • SOLAR ENERGY
ispartof: Solid state phenomena, 2013-10-07, Vol.205-206, p.55-64
description: This paper describes results of our study aimed at understanding mechanism (s) of dislocation generation and propagation in multi-crystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. The dislocation generation and propagation mechanisms, suggested by our results, are described in this paper.
language: eng
source: Alma/SFX Local Collection
identifier: ISSN: 1012-0394
fulltext: fulltext
issn:
  • 1012-0394
  • 1662-9779
  • 1662-9779
url: Link


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creatorcontribSeacrist, Mike ; Deshpande, Aditya ; Sopori, Bhushan ; Appel, Jesse ; Devayajanam, Srinivas ; Binns, Jeff ; Mehta, Vishal ; Shi, Gang ; Chen, J ; National Renewable Energy Lab. (NREL), Golden, CO (United States)
descriptionThis paper describes results of our study aimed at understanding mechanism (s) of dislocation generation and propagation in multi-crystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. The dislocation generation and propagation mechanisms, suggested by our results, are described in this paper.
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subjectdefects ; dislocations ; MATERIALS SCIENCE ; network model ; silicon ; solar cell ; SOLAR ENERGY
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1NREL/JA-5200-59173
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3USDOE Office of Energy Efficiency and Renewable Energy Solar Energy Technologies Program
abstractThis paper describes results of our study aimed at understanding mechanism (s) of dislocation generation and propagation in multi-crystalline silicon (mc-Si) ingots, and evaluating their influence on the solar cell performance. This work was done in two parts: (i) Measurement of dislocation distributions along various bricks, selected from strategic locations within several ingots; and (ii) Theoretical modeling of the cell performance corresponding to the measured dislocation distributions. Solar cells were fabricated on wafers of known dislocation distribution, and the results were compared with the theory. These results show that cell performance can be accurately predicted from the dislocation distribution, and the changes in the dislocation distribution are the primary cause for variations in the cell-to-cell performance. The dislocation generation and propagation mechanisms, suggested by our results, are described in this paper.
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doi10.4028/www.scientific.net/SSP.205-206.55