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Effect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET

The effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It i... Full description

Journal Title: Applied Mechanics and Materials 2013-01-11, Vol.275-277, p.1984-1987
Main Author: Li, Yu Chen
Other Authors: Hu, Hui Yong , Zhou, Chun Yu , Zhang, Yu Ming , Wang, Bin , Zhang, He Ming , Lou, Yong Le
Format: Electronic Article Electronic Article
Language: English
Publisher: Zurich: Trans Tech Publications Ltd
ID: ISSN: 1660-9336
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recordid: cdi_proquest_journals_1442617986
title: Effect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET
format: Article
creator:
  • Li, Yu Chen
  • Hu, Hui Yong
  • Zhou, Chun Yu
  • Zhang, Yu Ming
  • Wang, Bin
  • Zhang, He Ming
  • Lou, Yong Le
ispartof: Applied Mechanics and Materials, 2013-01-11, Vol.275-277, p.1984-1987
description: The effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.
language: eng
source:
identifier: ISSN: 1660-9336
fulltext: no_fulltext
issn:
  • 1660-9336
  • 1662-7482
  • 1662-7482
url: Link


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creatorLi, Yu Chen ; Hu, Hui Yong ; Zhou, Chun Yu ; Zhang, Yu Ming ; Wang, Bin ; Zhang, He Ming ; Lou, Yong Le
creatorcontribLi, Yu Chen ; Hu, Hui Yong ; Zhou, Chun Yu ; Zhang, Yu Ming ; Wang, Bin ; Zhang, He Ming ; Lou, Yong Le
descriptionThe effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.
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descriptionThe effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.
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atitleEffect of High-K Material on Gate Threshold Voltage for Double-Gate Tunnel FET
jtitleApplied Mechanics and Materials
date2013-01-11
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notesSelected, peer reviewed papers from the 2012 International Conference on Applied Mechanics and Materials (ICAMM 2012), November 24-25, 2012, Sanya, China
abstractThe effect of high-k material on gate threshold voltage for double gate tunnel field-effect transistor (DG-TFET) is studied in this paper. By physically derived the model of threshold voltage for DG-TFET, the quantitative relationship between threshold voltage and gate length is also discussed. It is shown that the proposed model is consistent with the simulation results, and can also easily predict the improved performance on the gate threshold voltage when using high-κ dielectrics and the limited effect on gate threshold voltage when changing the gate length.
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pubTrans Tech Publications Ltd
doi10.4028/www.scientific.net/AMM.275-277.1984