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Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers

SiC epitaxial layers were grown by vacuum sublimation on porous SiC substrates. The number of features such as an amorphization and the existence of big pores near the epitaxial layer concomitant this method is discussed. IR spectroscopy and PL confirmed structural perfection of growing epitaxial la... Full description

Journal Title: Materials science forum 2003, Vol.433-436, p.189-192
Main Author: Shuman, V.B.
Other Authors: Ratnikov, V.V. , Lebedev, A.A. , Rogachev, A.Yu , Savkina, N.S.
Format: Electronic Article Electronic Article
Language: English
Publisher: Trans Tech Publications Ltd
ID: ISSN: 0255-5476
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title: Features of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
format: Article
creator:
  • Shuman, V.B.
  • Ratnikov, V.V.
  • Lebedev, A.A.
  • Rogachev, A.Yu
  • Savkina, N.S.
ispartof: Materials science forum, 2003, Vol.433-436, p.189-192
description: SiC epitaxial layers were grown by vacuum sublimation on porous SiC substrates. The number of features such as an amorphization and the existence of big pores near the epitaxial layer concomitant this method is discussed. IR spectroscopy and PL confirmed structural perfection of growing epitaxial layers. The choice of the porous substrate is the key for the realization of high-quality overlayers. So, it is necessary knowledge how parameters of porous SiC depend on etching regimes and characteristics of the initial material.
language: eng
source:
identifier: ISSN: 0255-5476
fulltext: no_fulltext
issn:
  • 0255-5476
  • 1662-9752
  • 1662-9752
url: Link


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descriptionSiC epitaxial layers were grown by vacuum sublimation on porous SiC substrates. The number of features such as an amorphization and the existence of big pores near the epitaxial layer concomitant this method is discussed. IR spectroscopy and PL confirmed structural perfection of growing epitaxial layers. The choice of the porous substrate is the key for the realization of high-quality overlayers. So, it is necessary knowledge how parameters of porous SiC depend on etching regimes and characteristics of the initial material.
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atitleFeatures of Sublimation Growth on Porous SiC Substrates: Characteristics and Properties of Porous and Epitaxial Layers
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abstractSiC epitaxial layers were grown by vacuum sublimation on porous SiC substrates. The number of features such as an amorphization and the existence of big pores near the epitaxial layer concomitant this method is discussed. IR spectroscopy and PL confirmed structural perfection of growing epitaxial layers. The choice of the porous substrate is the key for the realization of high-quality overlayers. So, it is necessary knowledge how parameters of porous SiC depend on etching regimes and characteristics of the initial material.
pubTrans Tech Publications Ltd
doi10.4028/www.scientific.net/MSF.433-436.189