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Study of the Electrical Characteristics of the CNT/SiC Interface

Vertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy... Full description

Journal Title: Materials science forum 2009, Vol.615-617, p.231-234
Main Author: Perrone, Denis
Other Authors: Castellino, Micaela , Bianco, Stefano , Giorcelli, Mauro , Maccioni, Gabriele , Ferrero, Sergio , Tagliaferro, Alberto , Musso, Simone , Scaltrito, Luciano
Format: Electronic Article Electronic Article
Language: English
Publisher: Trans Tech Publications Ltd
ID: ISSN: 0255-5476
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title: Study of the Electrical Characteristics of the CNT/SiC Interface
format: Article
creator:
  • Perrone, Denis
  • Castellino, Micaela
  • Bianco, Stefano
  • Giorcelli, Mauro
  • Maccioni, Gabriele
  • Ferrero, Sergio
  • Tagliaferro, Alberto
  • Musso, Simone
  • Scaltrito, Luciano
ispartof: Materials science forum, 2009, Vol.615-617, p.231-234
description: Vertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy. The results have been compared with CNTs carpets grown in the same conditions on Si substrates. Preliminary analysis of their electrical properties has been performed using the four-point probe technique in order to evaluate their resistivity.
language: eng
source:
identifier: ISSN: 0255-5476
fulltext: no_fulltext
issn:
  • 0255-5476
  • 1662-9752
  • 1662-9752
url: Link


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titleStudy of the Electrical Characteristics of the CNT/SiC Interface
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descriptionVertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy. The results have been compared with CNTs carpets grown in the same conditions on Si substrates. Preliminary analysis of their electrical properties has been performed using the four-point probe technique in order to evaluate their resistivity.
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notesSelected, peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7 – 11, Barcelona, Spain
abstractVertically aligned multiwall carbon nanotubes were directly grown by means of thermal Chemical Vapor Deposition onto epitaxial and bulk double side polished 4H-SiC substrates. Their structure and morphology have been examined through Field Emission Scanning Electron Microscopy and Raman spectroscopy. The results have been compared with CNTs carpets grown in the same conditions on Si substrates. Preliminary analysis of their electrical properties has been performed using the four-point probe technique in order to evaluate their resistivity.
pubTrans Tech Publications Ltd
doi10.4028/www.scientific.net/MSF.615-617.231