schliessen

Filtern

 

Bibliotheken

Cover Image

Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth inter... Full description

Journal Title: Nanotechnology 2011-02-11, Vol.22 (6), p.065302-065302
Main Author: Skiba-Szymanska, Joanna
Other Authors: Jamil, Ayesha , Farrer, Ian , Ward, Martin B , Nicoll, Christine A , Ellis, David J P , Griffiths, Jonathan P , Anderson, David , Jones, Geb A C , Ritchie, David A , Shields, Andrew J
Format: Electronic Article Electronic Article
Language: English
Subjects:
Emission
Excitation
Fine structure
Fluctuation
Indium arsenides
Molecular beam epitaxy
Quantum dots
Wavelengths
Quelle: Alma/SFX Local Collection
Publisher: England: IOP Publishing
ID: ISSN: 0957-4484
Link: https://www.ncbi.nlm.nih.gov/pubmed/21212488
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: cdi_pubmed_primary_21212488
title: Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
format: Article
creator:
  • Skiba-Szymanska, Joanna
  • Jamil, Ayesha
  • Farrer, Ian
  • Ward, Martin B
  • Nicoll, Christine A
  • Ellis, David J P
  • Griffiths, Jonathan P
  • Anderson, David
  • Jones, Geb A C
  • Ritchie, David A
  • Shields, Andrew J
subjects:
  • Emission
  • Excitation
  • Fine structure
  • Fluctuation
  • Indium arsenides
  • Molecular beam epitaxy
  • Quantum dots
  • Wavelengths
ispartof: Nanotechnology, 2011-02-11, Vol.22 (6), p.065302-065302
description: We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
language: eng
source: Alma/SFX Local Collection
identifier: ISSN: 0957-4484
fulltext: fulltext
issn:
  • 0957-4484
  • 1361-6528
url: Link


@attributes
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
RANK2.4608614
LOCALfalse
PrimoNMBib
record
control
sourceidproquest_pubme
recordidTN_cdi_pubmed_primary_21212488
sourceformatXML
sourcesystemPC
sourcerecordid880669156
originalsourceidFETCH-LOGICAL-c409t-5654907657a2ac7b294d4b33ed98fdfc7b6336556401eefa8584590359ba33ad3
addsrcrecordideNqNkU1LHTEUhkNpqVfbn1DJrgpOb74nQ1cX8Qukbuw6ZCaZNjJ3MuZkkP57M1zrwgqWLALhed4k70HoCyXfKNF6TRpZV0JosWZsrdZESU7YO7SiXNFKSabfo9Uzs4f2Ae4IoVQz-hHtMVqW0HqF-h82pfiA_TYAhDjiIYz-Ibj8G3Ds8RQh5HLsHb4aN4DvZzvmeYtdzIB_FXHExZmSryabs08LeGE3cEQJOcYwt5CTzR4-oQ-9HcB_ftoP0M_zs9vTy-r65uLqdHNddYI0uZJKiobUStaW2a5uWSOcaDn3rtG968uJ4lxJqQSh3vdWSy1kQ7hsWsu5dfwAfd3lTinezx6yKf_q_DDY0ccZjNZEqYZK9TbJWAnmtS6k3JFdigDJ92ZKYWvTH0OJWWZhlp7N0rNhzCizm0XxDp9umNutd8_W3_IL8P1FcBeyXeoupYXhzXiys0Oc_vtFJ_8qr6Jmcj1_BDnxsl0
sourcetypeAggregation Database
isCDItrue
recordtypearticle
pqid822903378
display
typearticle
titleNarrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
sourceAlma/SFX Local Collection
creatorSkiba-Szymanska, Joanna ; Jamil, Ayesha ; Farrer, Ian ; Ward, Martin B ; Nicoll, Christine A ; Ellis, David J P ; Griffiths, Jonathan P ; Anderson, David ; Jones, Geb A C ; Ritchie, David A ; Shields, Andrew J
creatorcontribSkiba-Szymanska, Joanna ; Jamil, Ayesha ; Farrer, Ian ; Ward, Martin B ; Nicoll, Christine A ; Ellis, David J P ; Griffiths, Jonathan P ; Anderson, David ; Jones, Geb A C ; Ritchie, David A ; Shields, Andrew J
descriptionWe report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
identifier
0ISSN: 0957-4484
1EISSN: 1361-6528
2DOI: 10.1088/0957-4484/22/6/065302
3PMID: 21212488
languageeng
publisherEngland: IOP Publishing
subjectEmission ; Excitation ; Fine structure ; Fluctuation ; Indium arsenides ; Molecular beam epitaxy ; Quantum dots ; Wavelengths
ispartofNanotechnology, 2011-02-11, Vol.22 (6), p.065302-065302
lds50peer_reviewed
citedbyFETCH-LOGICAL-c409t-5654907657a2ac7b294d4b33ed98fdfc7b6336556401eefa8584590359ba33ad3
citesFETCH-LOGICAL-c409t-5654907657a2ac7b294d4b33ed98fdfc7b6336556401eefa8584590359ba33ad3
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
thumbnail$$Usyndetics_thumb_exl
backlink$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/21212488$$D View this record in MEDLINE/PubMed
search
creatorcontrib
0Skiba-Szymanska, Joanna
1Jamil, Ayesha
2Farrer, Ian
3Ward, Martin B
4Nicoll, Christine A
5Ellis, David J P
6Griffiths, Jonathan P
7Anderson, David
8Jones, Geb A C
9Ritchie, David A
10Shields, Andrew J
title
0Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
1Nanotechnology
addtitleNanotechnology
descriptionWe report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
subject
0Emission
1Excitation
2Fine structure
3Fluctuation
4Indium arsenides
5Molecular beam epitaxy
6Quantum dots
7Wavelengths
issn
00957-4484
11361-6528
fulltexttrue
rsrctypearticle
creationdate2011
recordtypearticle
recordideNqNkU1LHTEUhkNpqVfbn1DJrgpOb74nQ1cX8Qukbuw6ZCaZNjJ3MuZkkP57M1zrwgqWLALhed4k70HoCyXfKNF6TRpZV0JosWZsrdZESU7YO7SiXNFKSabfo9Uzs4f2Ae4IoVQz-hHtMVqW0HqF-h82pfiA_TYAhDjiIYz-Ibj8G3Ds8RQh5HLsHb4aN4DvZzvmeYtdzIB_FXHExZmSryabs08LeGE3cEQJOcYwt5CTzR4-oQ-9HcB_ftoP0M_zs9vTy-r65uLqdHNddYI0uZJKiobUStaW2a5uWSOcaDn3rtG968uJ4lxJqQSh3vdWSy1kQ7hsWsu5dfwAfd3lTinezx6yKf_q_DDY0ccZjNZEqYZK9TbJWAnmtS6k3JFdigDJ92ZKYWvTH0OJWWZhlp7N0rNhzCizm0XxDp9umNutd8_W3_IL8P1FcBeyXeoupYXhzXiys0Oc_vtFJ_8qr6Jmcj1_BDnxsl0
startdate20110211
enddate20110211
creator
0Skiba-Szymanska, Joanna
1Jamil, Ayesha
2Farrer, Ian
3Ward, Martin B
4Nicoll, Christine A
5Ellis, David J P
6Griffiths, Jonathan P
7Anderson, David
8Jones, Geb A C
9Ritchie, David A
10Shields, Andrew J
generalIOP Publishing
scope
0NPM
1AAYXX
2CITATION
37X8
47QQ
57SR
67U5
78BQ
88FD
9F28
10FR3
11JG9
12L7M
sort
creationdate20110211
titleNarrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
authorSkiba-Szymanska, Joanna ; Jamil, Ayesha ; Farrer, Ian ; Ward, Martin B ; Nicoll, Christine A ; Ellis, David J P ; Griffiths, Jonathan P ; Anderson, David ; Jones, Geb A C ; Ritchie, David A ; Shields, Andrew J
facets
frbrtype5
frbrgroupidcdi_FETCH-LOGICAL-c409t-5654907657a2ac7b294d4b33ed98fdfc7b6336556401eefa8584590359ba33ad3
rsrctypearticles
prefilterarticles
languageeng
creationdate2011
topic
0Emission
1Excitation
2Fine structure
3Fluctuation
4Indium arsenides
5Molecular beam epitaxy
6Quantum dots
7Wavelengths
toplevel
0peer_reviewed
1online_resources
creatorcontrib
0Skiba-Szymanska, Joanna
1Jamil, Ayesha
2Farrer, Ian
3Ward, Martin B
4Nicoll, Christine A
5Ellis, David J P
6Griffiths, Jonathan P
7Anderson, David
8Jones, Geb A C
9Ritchie, David A
10Shields, Andrew J
collection
0PubMed
1CrossRef
2MEDLINE - Academic
3Ceramic Abstracts
4Engineered Materials Abstracts
5Solid State and Superconductivity Abstracts
6METADEX
7Technology Research Database
8ANTE: Abstracts in New Technology & Engineering
9Engineering Research Database
10Materials Research Database
11Advanced Technologies Database with Aerospace
jtitleNanotechnology
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
au
0Skiba-Szymanska, Joanna
1Jamil, Ayesha
2Farrer, Ian
3Ward, Martin B
4Nicoll, Christine A
5Ellis, David J P
6Griffiths, Jonathan P
7Anderson, David
8Jones, Geb A C
9Ritchie, David A
10Shields, Andrew J
formatjournal
genrearticle
ristypeJOUR
atitleNarrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
jtitleNanotechnology
addtitleNanotechnology
date2011-02-11
risdate2011
volume22
issue6
spage065302
epage065302
pages065302-065302
issn0957-4484
eissn1361-6528
abstractWe report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
copEngland
pubIOP Publishing
pmid21212488
doi10.1088/0957-4484/22/6/065302