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Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates

We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth inter... Full description

Journal Title: Nanotechnology 2011-02-11, Vol.22 (6), p.065302-065302
Main Author: Skiba-Szymanska, Joanna
Other Authors: Jamil, Ayesha , Farrer, Ian , Ward, Martin B , Nicoll, Christine A , Ellis, David J P , Griffiths, Jonathan P , Anderson, David , Jones, Geb A C , Ritchie, David A , Shields, Andrew J
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Alma/SFX Local Collection
Publisher: England: IOP Publishing
ID: ISSN: 0957-4484
Link: https://www.ncbi.nlm.nih.gov/pubmed/21212488
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title: Narrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
format: Article
creator:
  • Skiba-Szymanska, Joanna
  • Jamil, Ayesha
  • Farrer, Ian
  • Ward, Martin B
  • Nicoll, Christine A
  • Ellis, David J P
  • Griffiths, Jonathan P
  • Anderson, David
  • Jones, Geb A C
  • Ritchie, David A
  • Shields, Andrew J
subjects:
  • Emission
  • Excitation
  • Fine structure
  • Fluctuation
  • Indium arsenides
  • Molecular beam epitaxy
  • Quantum dots
  • Wavelengths
ispartof: Nanotechnology, 2011-02-11, Vol.22 (6), p.065302-065302
description: We report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
language: eng
source: Alma/SFX Local Collection
identifier: ISSN: 0957-4484
fulltext: fulltext
issn:
  • 0957-4484
  • 1361-6528
url: Link


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titleNarrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
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creatorSkiba-Szymanska, Joanna ; Jamil, Ayesha ; Farrer, Ian ; Ward, Martin B ; Nicoll, Christine A ; Ellis, David J P ; Griffiths, Jonathan P ; Anderson, David ; Jones, Geb A C ; Ritchie, David A ; Shields, Andrew J
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descriptionWe report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
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subjectEmission ; Excitation ; Fine structure ; Fluctuation ; Indium arsenides ; Molecular beam epitaxy ; Quantum dots ; Wavelengths
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titleNarrow emission linewidths of positioned InAs quantum dots grown on pre-patterned GaAs(100) substrates
authorSkiba-Szymanska, Joanna ; Jamil, Ayesha ; Farrer, Ian ; Ward, Martin B ; Nicoll, Christine A ; Ellis, David J P ; Griffiths, Jonathan P ; Anderson, David ; Jones, Geb A C ; Ritchie, David A ; Shields, Andrew J
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abstractWe report photoluminescence measurements on a single layer of site-controlled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on pre-patterned GaAs(100) substrates with a 15 nm re-growth buffer separating the dots from the re-growth interface. A process for cleaning the re-growth interface allows us to measure single dot emission linewidths of 80 µeV under non-resonant optical excitation, similar to that observed for self-assembled QDs. The dots reveal excitonic transitions confirmed by power dependence and fine structure splitting measurements. The emission wavelengths are stable, which indicates the absence of a fluctuating charge background in the sample and confirms the cleanliness of the re-growth interface.
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