schliessen

Filtern

 

Bibliotheken

Crystallinity-Controlled Synthesis of Zirconium Oxide Thin Films on Nitrogen-Doped Carbon Nanotubes by Atomic Layer Deposition

Zirconium oxide (ZrO2) thin film was deposited on nitrogen-doped carbon nanotubes (NCNTs) by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium(IV) and water as precursors. The observation using scanning electron microscope and transmission electron microscope (TEM) revealed that t... Full description

Journal Title: The Journal of Physical Chemistry C 07/12/2012, Vol.116(27), pp.14656-14664
Main Author: Liu, Jian
Other Authors: Meng, Xiangbo , Banis, Mohammad Norouzi , Cai, Mei , Li, Ruying , Sun, Xueliang
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: American Chemical Society (via CrossRef)
ID: ISSN: 1932-7447 ; E-ISSN: 1932-7455 ; DOI: http://dx.doi.org/10.1021/jp3028462
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: crossref10.1021/jp3028462
title: Crystallinity-Controlled Synthesis of Zirconium Oxide Thin Films on Nitrogen-Doped Carbon Nanotubes by Atomic Layer Deposition
format: Article
creator:
  • Liu, Jian
  • Meng, Xiangbo
  • Banis, Mohammad Norouzi
  • Cai, Mei
  • Li, Ruying
  • Sun, Xueliang
subjects:
  • Chemistry
ispartof: The Journal of Physical Chemistry C, 07/12/2012, Vol.116(27), pp.14656-14664
description: Zirconium oxide (ZrO2) thin film was deposited on nitrogen-doped carbon nanotubes (NCNTs) by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium(IV) and water as precursors. The observation using scanning electron microscope and transmission electron microscope (TEM) revealed that the tubular films of 100-cycle ZrO2 were very uniform and conformal on NCNTs. Further characterization using X-ray diffraction, Raman spectroscopy, selected area electron diffraction, and high-resolution TEM disclosed that the crystallinity of the deposited ZrO2 films was controllable with deposition temperatures in the range of 100–250 °C. In contrast to the pure amorphous ZrO2 film deposited at 100 °C, tetragonal crystalline ZrO2 film was prepared at 250 °C, while a mixture of the former two phases was found between 150 and 200 °C. In all cases, the growth of ZrO2 tubular films on NCNTs showed a transformation from an island-growth mode to a layer-by-layer growth mode with increasing ALD cycles. The ZrO2–NCNT ...
language: eng
source: American Chemical Society (via CrossRef)
identifier: ISSN: 1932-7447 ; E-ISSN: 1932-7455 ; DOI: http://dx.doi.org/10.1021/jp3028462
fulltext: no_fulltext
issn:
  • 19327447
  • 1932-7447
  • 19327455
  • 1932-7455
url: Link


@attributes
ID1624449696
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid10.1021/jp3028462
sourceidcrossref
recordidTN_crossref10.1021/jp3028462
sourceformatXML
sourcesystemOther
display
typearticle
titleCrystallinity-Controlled Synthesis of Zirconium Oxide Thin Films on Nitrogen-Doped Carbon Nanotubes by Atomic Layer Deposition
creatorLiu, Jian ; Meng, Xiangbo ; Banis, Mohammad Norouzi ; Cai, Mei ; Li, Ruying ; Sun, Xueliang
ispartofThe Journal of Physical Chemistry C, 07/12/2012, Vol.116(27), pp.14656-14664
identifier
languageeng
sourceAmerican Chemical Society (via CrossRef)
lds4120120712
descriptionZirconium oxide (ZrO2) thin film was deposited on nitrogen-doped carbon nanotubes (NCNTs) by atomic layer deposition (ALD) using tetrakis(dimethylamido)zirconium(IV) and water as precursors. The observation using scanning electron microscope and transmission electron microscope (TEM) revealed that the tubular films of 100-cycle ZrO2 were very uniform and conformal on NCNTs. Further characterization using X-ray diffraction, Raman spectroscopy, selected area electron diffraction, and high-resolution TEM disclosed that the crystallinity of the deposited ZrO2 films was controllable with deposition temperatures in the range of 100–250 °C. In contrast to the pure amorphous ZrO2 film deposited at 100 °C, tetragonal crystalline ZrO2 film was prepared at 250 °C, while a mixture of the former two phases was found between 150 and 200 °C. In all cases, the growth of ZrO2 tubular films on NCNTs showed a transformation from an island-growth mode to a layer-by-layer growth mode with increasing ALD cycles. The ZrO2–NCNT ...
subjectChemistry;
lds50peer_reviewed
links
openurl$$Topenurl_article
thumbnail
0$$TPCamazon_thumb
1$$TPCgoogle_thumb
openurlfulltext$$Topenurlfull_article
addlink$$Uhttp://exlibris-pub.s3.amazonaws.com/aboutCrossref.html$$EView_CrossRef_copyright_notice
search
creatorcontrib
0Liu, Jian
1Meng, Xiangbo
2Banis, Mohammad Norouzi
3Cai, Mei
4Li, Ruying
5Sun, Xueliang
titleCrystallinity-Controlled Synthesis of Zirconium Oxide Thin Films on Nitrogen-Doped Carbon Nanotubes by Atomic Layer Deposition
general
0English
110.1021/jp3028462
2American Chemical Society (via CrossRef)
3American Chemical Society (CrossRef)
sourceidcrossref
recordidcrossref10.1021/jp3028462
issn
019327447
11932-7447
219327455
31932-7455
rsrctypearticle
addtitle
0The Journal of Physical Chemistry C
1J. Phys. Chem. C
searchscope
0crossref_acs
1CrossRef
2Crossref
3crossref
scope
0crossref_acs
1CrossRef
2Crossref
3crossref
lsr402012201206072512
lsr4120120712
lsr4220120625
lsr4320120712
lsr442012
lsr452012201206072612
tmp012
tmp022
creationdate2012
startdate20120712
enddate20120712
citationpf 14656 pt 14664 vol 116 issue 27
lsr30VSR-Enriched:[description, subject]
sort
titleCrystallinity-Controlled Synthesis of Zirconium Oxide Thin Films on Nitrogen-Doped Carbon Nanotubes by Atomic Layer Deposition
authorLiu, Jian ; Meng, Xiangbo ; Banis, Mohammad Norouzi ; Cai, Mei ; Li, Ruying ; Sun, Xueliang
creationdate20120712
lso0120120712
facets
frbrgroupid7228778720406622237
frbrtype5
languageeng
creationdate2012
collectionAmerican Chemical Society (CrossRef)
prefilterarticles
rsrctypearticles
creatorcontrib
0Liu, Jian
1Meng, Xiangbo
2Banis, Mohammad Norouzi
3Cai, Mei
4Li, Ruying
5Sun, Xueliang
jtitleJournal of Physical Chemistry C
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextno_fulltext
addata
aulast
0Liu
1Meng
2Banis
3Cai
4Li
5Sun
aufirst
0Jian
1Xiangbo
2Mohammad Norouzi
3Mei
4Ruying
5Xueliang
au
0Liu, Jian
1Meng, Xiangbo
2Banis, Mohammad Norouzi
3Cai, Mei
4Li, Ruying
5Sun, Xueliang
atitleCrystallinity-Controlled Synthesis of Zirconium Oxide Thin Films on Nitrogen-Doped Carbon Nanotubes by Atomic Layer Deposition
jtitleThe Journal of Physical Chemistry C
stitleJ. Phys. Chem. C
risdate20120712
adddate
020120625
12012201206072512
220120712
32012
42012201206072612
volume116
issue27
spage14656
epage14664
pages14656-14664
issn1932-7447
eissn1932-7455
formatjournal
genrearticle
ristypeJOUR
doi10.1021/jp3028462
lad012
citing
0$$t=2$$K1=1991$$K4=354$$K6=56$$K7=nature$$K15=iijimas$$K16=iijimas$$K18=iijima
1$$t=2$$K1=1995$$K4=33$$K6=883$$K7=carbon$$K15=dresselhausm$$K16=dresselhausm$$K18=dresselhaus
2$$t=2$$K1=2011$$K4=49$$K6=294$$K7=carbon$$K15=okamotoa$$K16=okamotoa$$K18=okamoto
3$$t=2$$K1=2002$$K4=297$$K6=787$$K7=science$$K15=baughmanrh$$K16=baughmanrh$$K18=baughman
4$$t=2$$K1=2009$$K4=323$$K6=760$$K7=science$$K15=gongk$$K16=gongk$$K18=gong
5$$t=2$$K1=2005$$K4=43$$K6=1259$$K7=carbon$$K15=guodj$$K16=guodj$$K18=guo
6$$t=2$$K1=2006$$K4=17$$K6=3817$$K7=nanotechnology$$K15=wangyh$$K16=wangyh$$K18=wang
7$$t=2$$K1=2004$$K4=381$$K6=57$$K7=mater sci eng$$K15=morisaday$$K16=morisaday$$K18=morisada
8$$t=2$$K1=2004$$K4=16$$K6=350$$K7=adv mater$$K15=ful$$K16=ful
9$$t=2$$K1=2005$$K4=5$$K6=879$$K7=nano lett$$K15=kornevag$$K16=kornevag$$K18=korneva
10$$t=2$$K1=2004$$K4=42$$K6=1147$$K7=carbon$$K15=jitianua$$K16=jitianua$$K18=jitianu
11$$t=2$$K1=2005$$K4=91$$K6=313$$K7=mater chem phys$$K15=jiangl$$K16=jiangl$$K18=jiang
12$$t=2$$K1=2004$$K4=85$$K6=666$$K7=appl phys lett$$K15=liangyx$$K16=liangyx$$K18=liang
13$$t=2$$K1=2006$$K4=6$$K6=699$$K7=nano lett$$K15=farmerdb$$K16=farmerdb$$K18=farmer
14$$t=2$$K1=2003$$K4=14$$K6=312$$K7=nanotechnology$$K15=piticescurm$$K16=piticescurm$$K18=piticescu
15$$t=2$$K1=2008$$K4=8$$K6=4070$$K7=nano lett$$K15=luj$$K16=luj
16$$t=2$$K1=2004$$K4=366$$K6=206$$K7=mater sci eng$$K15=luoty$$K16=luoty$$K18=luo
17$$t=2$$K1=2010$$K4=45$$K6=1855$$K7=mater res bull$$K15=liangr$$K16=liangr$$K18=liang
18$$t=2$$K1=2009$$K4=364$$K6=1$$K7=appl catal$$K15=songh$$K16=songh$$K18=song
19$$t=2$$K1=2009$$K4=89$$K6=597$$K7=appl catal b$$K15=guod$$K16=guod$$K18=guo
20$$t=2$$K1=2002$$K4=1$$K6=241$$K7=nature$$K15=javeya$$K16=javeya$$K18=javey
21$$t=2$$K1=2010$$K4=26$$K6=3609$$K7=langmuir$$K15=palk$$K16=palk$$K18=pal
22$$t=2$$K1=2006$$K4=110$$K6=13410$$K7=j phys chem b$$K15=sunz$$K16=sunz$$K18=sun
23$$t=2$$K1=2005$$K4=16$$K6=625$$K7=nanotechnology$$K15=shany$$K16=shany$$K18=shan
24$$t=2$$K1=2004$$K4=42$$K6=1995$$K7=carbon$$K15=lupof$$K16=lupof$$K18=lupo
25$$t=2$$K1=2005$$K4=17$$K6=17$$K7=adv mater$$K15=banerjees$$K16=banerjees$$K18=banerjee
26$$t=2$$K1=2006$$K4=128$$K6=3518$$K7=j am chem soc$$K15=luy$$K16=luy
27$$t=2$$K1=2011$$K4=22$$K6=165602$$K7=nanotechnology$$K15=mengx$$K16=mengx$$K18=meng
28$$t=2$$K1=2011$$K4=49$$K6=1133$$K7=carbon$$K15=mengx$$K16=mengx$$K18=meng
29$$t=2$$K1=2011$$K4=21$$K6=12321$$K7=j mater chem$$K15=mengx$$K16=mengx$$K18=meng
30$$t=2$$K1=2011$$K4=13$$K6=1207$$K7=j nanopart res$$K15=mengx$$K16=mengx$$K18=meng
31$$t=2$$K1=2010$$K4=114$$K6=18330$$K7=j phys chem c$$K15=mengx$$K16=mengx$$K18=meng
32$$t=2$$K1=2011$$K4=36$$K6=11085$$K7=int j hydrogen energy$$K15=cheny$$K16=cheny$$K18=chen
33$$t=2$$K3=10.1002/adfm.201101068
34$$t=2$$K1=2010$$K4=110$$K6=111$$K7=chem rev$$K15=georgesm$$K16=georgesm$$K18=george
35$$t=2$$K1=2005$$K4=97$$K6=121301$$K7=j appl phys$$K15=puurunenrl$$K16=puurunenrl$$K18=puurunen
36$$t=2$$K1=2004$$K4=10$$K6=201$$K7=chem vap deposition$$K15=namwh$$K16=namwh$$K18=namwh
37$$t=2$$K1=2002$$K4=14$$K6=4350$$K7=chem mater$$K15=hausmanndm$$K16=hausmanndm$$K18=hausmann
38$$t=2$$K1=2003$$K4=249$$K6=251$$K7=j cryst growth$$K15=hausmanndm$$K16=hausmanndm$$K18=hausmann
39$$t=2$$K1=2004$$K4=16$$K6=3497$$K7=chem mater$$K15=beckerjs$$K16=beckerjs$$K18=becker
40$$t=2$$K1=2008$$K4=202$$K6=4114$$K7=surf coat technol$$K15=liuh$$K16=liuh$$K18=liu
41$$t=2$$K1=2010$$K4=71$$K6=134$$K7=j phys chem solids$$K15=zhongy$$K16=zhongy$$K18=zhong
42$$t=2$$K1=2010$$K4=48$$K6=1498$$K7=carbon$$K15=liuh$$K16=liuh$$K18=liu
43$$t=2$$K1=1994$$K4=110$$K6=201$$K7=j solid state chem$$K15=hiratat$$K16=hiratat$$K18=hirata
44$$t=2$$K1=1974$$K4=57$$K6=22$$K7=j am ceram soc$$K15=keramidasvg$$K16=keramidasvg$$K18=keramidas
45$$t=2$$K1=2002$$K4=303$$K6=29$$K7=j non cryst solids$$K15=ferraris$$K16=ferraris$$K18=ferrari
46$$t=2$$K1=2011$$K4=115$$K6=9370$$K7=j phys chem c$$K15=chenl$$K16=chenl$$K18=chen
47$$t=2$$K1=2005$$K4=88$$K6=160$$K7=j am ceram soc$$K15=pitchermw$$K16=pitchermw$$K18=pitcher
48$$t=2$$K1=1965$$K4=69$$K6=1238$$K7=j phys chem$$K15=garvierc$$K16=garvierc$$K18=garvie
49$$t=2$$K1=2004$$K4=86$$K6=4878$$K7=j appl phys$$K15=puurunenrl$$K16=puurunenrl$$K18=puurunen
50$$t=2$$K1=2000$$K4=76$$K6=436$$K7=appl phys lett$$K15=copelm$$K16=copelm$$K18=copel
51$$t=2$$K1=2002$$K4=303$$K6=123$$K7=j non cryst solid$$K15=beslingwfa$$K16=beslingwfa$$K18=besling
52$$t=2$$K1=2011$$K4=13$$K6=3451$$K7=crystengcomm$$K15=minys$$K16=minys$$K18=min
53$$t=2$$K1=2005$$K4=17$$K6=3749$$K7=chem mater$$K15=suncl$$K16=suncl$$K18=suncl
54$$t=2$$K1=2009$$K4=45$$K6=7048$$K7=chem commun$$K15=suns$$K16=suns$$K18=sun
55$$t=2$$K1=2005$$K4=109$$K6=1683$$K7=j phys chem b$$K15=choihc$$K16=choihc$$K18=choi
56$$t=2$$K1=2008$$K4=104$$K6=084907$$K7=j appl phys$$K15=rodríguezreyesjcf$$K16=rodríguezreyesjcf$$K18=rodríguezreyes
57$$t=2$$K1=2000$$K4=368$$K6=1$$K7=thin solid films$$K15=materor$$K16=materor$$K18=matero
58$$t=2$$K1=2002$$K4=193$$K6=120$$K7=appl surf sci$$K15=cassirm$$K16=cassirm$$K18=cassir
59$$t=2$$K1=1996$$K4=169$$K6=496$$K7=j cryst growth$$K15=aarikj$$K16=aarikj$$K18=aarik
60$$t=2$$K1=1994$$K4=75$$K6=333$$K7=appl surf sci$$K15=ritalam$$K16=ritalam$$K18=ritala
61$$t=2$$K1=2002$$K4=92$$K6=1833$$K7=j appl phys$$K15=kuklik$$K16=kuklik$$K18=kukli
62$$t=2$$K1=2003$$K4=21$$K6=1359$$K7=j vac sci technol$$K15=scarelg$$K16=scarelg$$K18=scarel
63$$t=2$$K1=1995$$K4=148$$K6=268$$K7=j cryst growth$$K15=aarikj$$K16=aarikj$$K18=aarik
64$$t=2$$K1=1994$$K4=250$$K6=72$$K7=thin solid films$$K15=ritalam$$K16=ritalam$$K18=ritala
65$$t=2$$K1=1986$$K4=60$$K6=R65$$K7=j appl phys$$K15=goodmanchl$$K16=goodmanchl$$K18=goodman
66$$t=2$$K1=2002$$K4=408$$K6=97$$K7=thin solid films$$K15=aarikj$$K16=aarikj$$K18=aarik
date2012-07-12