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Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures

Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm... Full description

Journal Title: Nature Communications 01 September 2018, Vol.9(1), pp.1-9
Main Author: Jangyup Son
Other Authors: Junyoung Kwon , Sunphil Kim , Yinchuan Lv , Jaehyung Yu , Jong-Young Lee , Huije Ryu , Kenji Watanabe , Takashi Taniguchi , Rita Garrido-Menacho , Nadya Mason , Elif Ertekin , Pinshane Y. Huang , Gwan-Hyoung Lee , Arend M. van Der Zande
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-06524-3
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recordid: doaj_soai_doaj_org_article_7476aa8be546462e8b94392d30fe0da0
title: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
format: Article
creator:
  • Jangyup Son
  • Junyoung Kwon
  • Sunphil Kim
  • Yinchuan Lv
  • Jaehyung Yu
  • Jong-Young Lee
  • Huije Ryu
  • Kenji Watanabe
  • Takashi Taniguchi
  • Rita Garrido-Menacho
  • Nadya Mason
  • Elif Ertekin
  • Pinshane Y. Huang
  • Gwan-Hyoung Lee
  • Arend M. van Der Zande
subjects:
  • Biology
ispartof: Nature Communications, 01 September 2018, Vol.9(1), pp.1-9
description: Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm
language: eng
source:
identifier: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-06524-3
fulltext: fulltext_linktorsrc
issn:
  • 2041-1723
  • 20411723
url: Link


@attributes
ID1782565946
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordidoai_doaj_org_article_7476aa8be546462e8b94392d30fe0da0
sourceiddoaj_s
recordidTN_doaj_soai_doaj_org_article_7476aa8be546462e8b94392d30fe0da0
sourcesystemOther
dbidDOA
pqid2114692925
display
typearticle
titleAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
creatorJangyup Son ; Junyoung Kwon ; Sunphil Kim ; Yinchuan Lv ; Jaehyung Yu ; Jong-Young Lee ; Huije Ryu ; Kenji Watanabe ; Takashi Taniguchi ; Rita Garrido-Menacho ; Nadya Mason ; Elif Ertekin ; Pinshane Y. Huang ; Gwan-Hyoung Lee ; Arend M. van Der Zande
ispartofNature Communications, 01 September 2018, Vol.9(1), pp.1-9
identifierE-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-06524-3
subjectBiology
descriptionFabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm
languageeng
oafree_for_read
source
version7
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
linktorsrc$$Uhttps://doaj.org/article/7476aa8be546462e8b94392d30fe0da0$$EView_full_text_in_DOAJ
search
creatorcontrib
0Jangyup Son
1Junyoung Kwon
2Sunphil Kim
3Yinchuan Lv
4Jaehyung Yu
5Jong-Young Lee
6Huije Ryu
7Kenji Watanabe
8Takashi Taniguchi
9Rita Garrido-Menacho
10Nadya Mason
11Elif Ertekin
12Pinshane Y. Huang
13Gwan-Hyoung Lee
14Arend M. van Der Zande
titleAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
description

Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm

subjectBiology
general
0English
1Nature Publishing Group
210.1038/s41467-018-06524-3
3Directory of Open Access Journals (DOAJ)
sourceiddoaj_s
recordiddoaj_soai_doaj_org_article_7476aa8be546462e8b94392d30fe0da0
issn
02041-1723
120411723
rsrctypearticle
creationdate2018
addtitleNature Communications
searchscope
0doaj_full
1doaj1
scope
0doaj_full
1doaj1
lsr45$$EView_full_text_in_DOAJ
tmp01Directory of Open Access Journals (DOAJ)
tmp02DOA
startdate20180901
enddate20180901
lsr40Nature Communications, 01 September 2018, Vol.9 (1), pp.1-9
doi10.1038/s41467-018-06524-3
citationpf 1 pt 9 vol 9 issue 1
lsr30VSR-Enriched:[pqid, orcidid]
sort
titleAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
authorJangyup Son ; Junyoung Kwon ; Sunphil Kim ; Yinchuan Lv ; Jaehyung Yu ; Jong-Young Lee ; Huije Ryu ; Kenji Watanabe ; Takashi Taniguchi ; Rita Garrido-Menacho ; Nadya Mason ; Elif Ertekin ; Pinshane Y. Huang ; Gwan-Hyoung Lee ; Arend M. van Der Zande
creationdate20180901
lso0120180901
facets
frbrgroupid2430852681305469452
frbrtype5
newrecords20190714
languageeng
topicBiology
collectionDirectory of Open Access Journals (DOAJ)
prefilterarticles
rsrctypearticles
creatorcontrib
0Jangyup Son
1Junyoung Kwon
2Sunphil Kim
3Yinchuan Lv
4Jaehyung Yu
5Jong-Young Lee
6Huije Ryu
7Kenji Watanabe
8Takashi Taniguchi
9Rita Garrido-Menacho
10Nadya Mason
11Elif Ertekin
12Pinshane Y. Huang
13Gwan-Hyoung Lee
14Arend M. van Der Zande
jtitleNature Communications
creationdate2018
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext_linktorsrc
addata
au
0Jangyup Son
1Junyoung Kwon
2Sunphil Kim
3Yinchuan Lv
4Jaehyung Yu
5Jong-Young Lee
6Huije Ryu
7Kenji Watanabe
8Takashi Taniguchi
9Rita Garrido-Menacho
10Nadya Mason
11Elif Ertekin
12Pinshane Y. Huang
13Gwan-Hyoung Lee
14Arend M. van Der Zande
atitleAtomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
jtitleNature Communications
risdate20180901
volume9
issue1
spage1
epage9
pages1-9
eissn2041-1723
formatjournal
genrearticle
ristypeJOUR
abstract

Fabrication methods to pattern thin materials are a critical tool to build molecular scale devices. Here the authors report a selective etching method using XeF2 gas to pattern graphene based heterostructures with multiple active layers and achieve 1D contacts with low contact resistivity of 80 Ω·µm

pubNature Publishing Group
doi10.1038/s41467-018-06524-3
urlhttps://doaj.org/article/7476aa8be546462e8b94392d30fe0da0
lad01Nature Communications
oafree_for_read
orcidid0000000337018119
date2018-09-01