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Large-area and bright pulsed electroluminescence in monolayer semiconductors

Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostr... Full description

Journal Title: Nature Communications 01 March 2018, Vol.9(1), pp.1-7
Main Author: Der-Hsien Lien
Other Authors: Matin Amani , Sujay B. Desai , Geun Ho Ahn , Kevin Han , Jr-Hau He , Joel W. Ager , Ming C. Wu , Ali Javey
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-03218-8
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title: Large-area and bright pulsed electroluminescence in monolayer semiconductors
format: Article
creator:
  • Der-Hsien Lien
  • Matin Amani
  • Sujay B. Desai
  • Geun Ho Ahn
  • Kevin Han
  • Jr-Hau He
  • Joel W. Ager
  • Ming C. Wu
  • Ali Javey
subjects:
  • Biology
ispartof: Nature Communications, 01 March 2018, Vol.9(1), pp.1-7
description: Transition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS 2 , WS 2 , MoSe 2 , and WSe 2 ) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device. Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts for electrons and holes, and observe millimetre-scale light emission from a transparent 2D display.
language: eng
source:
identifier: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-03218-8
fulltext: fulltext_linktorsrc
issn:
  • 2041-1723
  • 20411723
url: Link


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titleLarge-area and bright pulsed electroluminescence in monolayer semiconductors
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descriptionTransition-metal dichalcogenide monolayers have naturally terminated surfaces and can exhibit a near-unity photoluminescence quantum yield in the presence of suitable defect passivation. To date, steady-state monolayer light-emitting devices suffer from Schottky contacts or require complex heterostructures. We demonstrate a transient-mode electroluminescent device based on transition-metal dichalcogenide monolayers (MoS 2 , WS 2 , MoSe 2 , and WSe 2 ) to overcome these problems. Electroluminescence from this dopant-free two-terminal device is obtained by applying an AC voltage between the gate and the semiconductor. Notably, the electroluminescence intensity is weakly dependent on the Schottky barrier height or polarity of the contact. We fabricate a monolayer seven-segment display and achieve the first transparent and bright millimeter-scale light-emitting monolayer semiconductor device. Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts for electrons and holes, and observe millimetre-scale light emission from a transparent 2D display.
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Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts for electrons and holes, and observe millimetre-scale light emission from a transparent 2D display.

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Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts for electrons and holes, and observe millimetre-scale light emission from a transparent 2D display.

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