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Large-area and bright pulsed electroluminescence in monolayer semiconductors

Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts...

Journal Title: Nature Communications 01 March 2018, Vol.9(1), pp.1-7
Main Author: Der-Hsien Lien
Other Authors: Matin Amani , Sujay B. Desai , Geun Ho Ahn , Kevin Han , Jr-Hau He , Joel W. Ager , Ming C. Wu , Ali Javey
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-03218-8
Zum Text:
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recordid: doaj_soai_doaj_org_article_b8627685fe2e4a9b86398dbe91c65d1f
title: Large-area and bright pulsed electroluminescence in monolayer semiconductors
format: Article
creator:
  • Der-Hsien Lien
  • Matin Amani
  • Sujay B. Desai
  • Geun Ho Ahn
  • Kevin Han
  • Jr-Hau He
  • Joel W. Ager
  • Ming C. Wu
  • Ali Javey
subjects:
  • Biology
ispartof: Nature Communications, 01 March 2018, Vol.9(1), pp.1-7
description: Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts...
language: eng
source:
identifier: E-ISSN: 2041-1723 ; DOI: 10.1038/s41467-018-03218-8
fulltext: fulltext_linktorsrc
issn:
  • 2041-1723
  • 20411723
url: Link


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Atomically thin monolayers with high photoluminescence quantum yield are promising for optoelectronic and lighting applications. Here, the authors fabricate a transient-mode electroluminescent device to bypass the requirement of ohmic contacts...

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