schliessen

Filtern

 

Bibliotheken

Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al 2O 3 and AlN

The authors investigated the surface passivation mechanisms of H-terminated Ge(100)(2 × 1) by atomic layer deposition of Al O , AlN through first-principles calculation method. The formation of initial Al O and AlN passivation layer on Ge surface is investigated at atomic scale and the corresponding... Full description

Journal Title: Thin Solid Films 2011, Vol.519(18), pp.6000-6003
Main Author: Xu, Yan
Other Authors: Chen, Lin , Sun, Qing-Qing , Wang, Peng-Fei , Ding, Shi-Jin , Zhang, David Wei
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0040-6090 ; E-ISSN: 1879-2731 ; DOI: 10.1016/j.tsf.2011.03.127
Link: https://www.sciencedirect.com/science/article/pii/S0040609011007851
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: elsevier_sdoi_10_1016_j_tsf_2011_03_127
title: Initial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al 2O 3 and AlN
format: Article
creator:
  • Xu, Yan
  • Chen, Lin
  • Sun, Qing-Qing
  • Wang, Peng-Fei
  • Ding, Shi-Jin
  • Zhang, David Wei
subjects:
  • Aluminium Nitride
  • Alumina
  • Atomic Layer Deposition
  • First-Principle Calculation
  • Surface Passivation
  • Engineering
  • Physics
ispartof: Thin Solid Films, 2011, Vol.519(18), pp.6000-6003
description: The authors investigated the surface passivation mechanisms of H-terminated Ge(100)(2 × 1) by atomic layer deposition of Al O , AlN through first-principles calculation method. The formation of initial Al O and AlN passivation layer on Ge surface is investigated at atomic scale and the corresponding reaction pathways for both the reaction are also presented. The reaction barrier heights of H O and NH half reaction are 0.53 eV/mol and 0.51 eV/mol higher than that of Al(CH ) half reaction, respectively which indicates that the overall passivation processes of the both reactions are limited by the second half reaction. Moreover, the chemisorption state and product state of the NH half...
language: eng
source:
identifier: ISSN: 0040-6090 ; E-ISSN: 1879-2731 ; DOI: 10.1016/j.tsf.2011.03.127
fulltext: fulltext
issn:
  • 0040-6090
  • 00406090
  • 1879-2731
  • 18792731
url: Link


@attributes
ID1467835773
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordiddoi_10_1016_j_tsf_2011_03_127
sourceidelsevier_s
recordidTN_elsevier_sdoi_10_1016_j_tsf_2011_03_127
sourcesystemPC
dbid
0--K
1--M
2.~1
31B1
41RT
51~.
6457
74G.
87-5
98P~
109JN
11AABNK
12AAEDT
13AAEPC
14AAKOC
15AAOAW
16AAQFI
17ABFNM
18ABXRA
19ABYKQ
20ACDAQ
21ACFVG
22ACRLP
23AEKER
24AEZYN
25AFKWA
26AFTJW
27AGHFR
28AGUBO
29AGYEJ
30AHHHB
31AIKHN
32AITUG
33AIVDX
34AJBFU
35AJOXV
36AMFUW
37BLXMC
38EO8
39EO9
40EP2
41EP3
42FDB
43FGOYB
44FIRID
45FNPLU
46G-Q
47GBLVA
48HMV
49J1W
50KOM
51MAGPM
52OAUVE
53OGIMB
54P-8
55P-9
56PC.
57Q38
58R2-
59RPZ
60SDF
61SDG
62SDP
63SES
64SEW
65SMS
66SPC
67SPD
68SPG
69SSM
70SSQ
71SSZ
72T5K
73~G-
pqid907940304
galeid258085908
display
typearticle
titleInitial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al 2O 3 and AlN
creatorXu, Yan ; Chen, Lin ; Sun, Qing-Qing ; Wang, Peng-Fei ; Ding, Shi-Jin ; Zhang, David Wei
ispartofThin Solid Films, 2011, Vol.519(18), pp.6000-6003
identifier
subjectAluminium Nitride ; Alumina ; Atomic Layer Deposition ; First-Principle Calculation ; Surface Passivation ; Engineering ; Physics
descriptionThe authors investigated the surface passivation mechanisms of H-terminated Ge(100)(2 × 1) by atomic layer deposition of Al O , AlN through first-principles calculation method. The formation of initial Al O and AlN passivation layer on Ge surface is investigated at atomic scale and the corresponding reaction pathways for both the reaction are also presented. The reaction barrier heights of H O and NH half reaction are 0.53 eV/mol and 0.51 eV/mol higher than that of Al(CH ) half reaction, respectively which indicates that the overall passivation processes of the both reactions are limited by the second half reaction. Moreover, the chemisorption state and product state of the NH half...
languageeng
source
version4
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
backlink$$Uhttps://www.sciencedirect.com/science/article/pii/S0040609011007851$$EView_record_in_ScienceDirect_(Access_to_full_text_may_be_restricted)
search
creatorcontrib
0Xu, Yan
1Chen, Lin
2Sun, Qing-Qing
3Wang, Peng-Fei
4Ding, Shi-Jin
5Zhang, David Wei
titleInitial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al 2O 3 and AlN
description
subject
0Aluminium Nitride
1Alumina
2Atomic Layer Deposition
3First-Principle Calculation
4Surface Passivation
5Engineering
6Physics
general
0English
1Elsevier B.V
210.1016/j.tsf.2011.03.127
3ScienceDirect (Elsevier)
4ScienceDirect Journals (Elsevier)
sourceidelsevier_s
recordidelsevier_sdoi_10_1016_j_tsf_2011_03_127
issn
00040-6090
100406090
21879-2731
318792731
rsrctypearticle
creationdate2011
addtitleThin Solid Films
searchscope
0elsevier_full
1elsevier2
scope
0elsevier_full
1elsevier2
lsr44$$EView_record_in_ScienceDirect_(Access_to_full_text_may_be_restricted)
tmp01ScienceDirect Journals (Elsevier)
tmp02
0--K
1--M
2.~1
31B1
41RT
51~.
6457
74G.
87-5
98P~
109JN
11AABNK
12AAEDT
13AAEPC
14AAKOC
15AAOAW
16AAQFI
17ABFNM
18ABXRA
19ABYKQ
20ACDAQ
21ACFVG
22ACRLP
23AEKER
24AEZYN
25AFKWA
26AFTJW
27AGHFR
28AGUBO
29AGYEJ
30AHHHB
31AIKHN
32AITUG
33AIVDX
34AJBFU
35AJOXV
36AMFUW
37BLXMC
38EO8
39EO9
40EP2
41EP3
42FDB
43FGOYB
44FIRID
45FNPLU
46G-Q
47GBLVA
48HMV
49J1W
50KOM
51MAGPM
52OAUVE
53OGIMB
54P-8
55P-9
56PC.
57Q38
58R2-
59RPZ
60SDF
61SDG
62SDP
63SES
64SEW
65SMS
66SPC
67SPD
68SPG
69SSM
70SSQ
71SSZ
72T5K
73~G-
startdate20110101
enddate20111231
lsr40Thin Solid Films, 2011, Vol.519 (18), pp.6000-6003
doi10.1016/j.tsf.2011.03.127
citationpf 6000 pt 6003 vol 519 issue 18
lsr30VSR-Enriched:[pqid, galeid]
sort
titleInitial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al 2O 3 and AlN
authorXu, Yan ; Chen, Lin ; Sun, Qing-Qing ; Wang, Peng-Fei ; Ding, Shi-Jin ; Zhang, David Wei
creationdate20110000
lso0120110000
facets
frbrgroupid5325722875624158363
frbrtype5
newrecords20190904
languageeng
topic
0Aluminium Nitride
1Alumina
2Atomic Layer Deposition
3First-Principle Calculation
4Surface Passivation
5Engineering
6Physics
collectionScienceDirect (Elsevier)
prefilterarticles
rsrctypearticles
creatorcontrib
0Xu, Yan
1Chen, Lin
2Sun, Qing-Qing
3Wang, Peng-Fei
4Ding, Shi-Jin
5Zhang, David Wei
jtitleThin Solid Films
creationdate2011
toplevelpeer_reviewed
delivery
delcategoryRemote Search Resource
fulltextfulltext
addata
aulast
0Xu
1Chen
2Sun
3Wang
4Ding
5Zhang
aufirst
0Yan
1Lin
2Qing-Qing
3Peng-Fei
4Shi-Jin
5David Wei
auinitY
auinit1Y
au
0Xu, Yan
1Chen, Lin
2Sun, Qing-Qing
3Wang, Peng-Fei
4Ding, Shi-Jin
5Zhang, David Wei
atitleInitial reaction mechanism of H-passivated Ge surface passivation by atomic layer deposition of Al 2O 3 and AlN
jtitleThin Solid Films
date2011
risdate2011
volume519
issue18
spage6000
epage6003
pages6000-6003
issn0040-6090
eissn1879-2731
formatjournal
genrearticle
ristypeJOUR
abstract
pubElsevier B.V
doi10.1016/j.tsf.2011.03.127
lad01Thin Solid Films