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Lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and CdTe-based substrates.(Author abstract)(Report)

Byline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Copper; defects; doping; HgCdTe; lithium; sodium Abstract: We present a theoretical examination of the behavior of lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and in CdTe. In both HgCdTe and CdTe, all three impurit... Full description

Journal Title: Journal of Electronic Materials June, 1998, Vol.27(6), p.573(6)
Main Author: Berding, M. A.
Other Authors: Sher, A. , Schilfgaarde, M.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235
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recordid: gale_ofa169068873
title: Lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and CdTe-based substrates.(Author abstract)(Report)
format: Article
creator:
  • Berding, M. A.
  • Sher, A.
  • Schilfgaarde, M.
subjects:
  • Cadmium Compounds
ispartof: Journal of Electronic Materials, June, 1998, Vol.27(6), p.573(6)
description: Byline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Copper; defects; doping; HgCdTe; lithium; sodium Abstract: We present a theoretical examination of the behavior of lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and in CdTe. In both HgCdTe and CdTe, all three impurities are determined to incorporate predominantly on the cation sublattice for most pressures and temperatures, where all the impurities have acceptor levels. All three impurities have secondary incorporation as interstitials, where they all behave as donors. Under conditions present in low-temperature, mercury-saturated anneals, lithium and sodium are mobilized because of the relatively high interstitial fraction, lower solubility, and an exothermic impurity kick-out reaction when the material is subjected to an injection of mercury interstitials. Strain effects on the impurity incorporation are small and do not provide a strong driving force for these impurities to segregate. By examining the relative behavior of the impurities in CdTe and HgCdTe, we have derived prescriptions for maximizing gettering the impurities from CdTe-based sub-strates using a sacrificial HgCdTe epilayer, and for minimizing gettering from the substrates during epilayer growth. Author Affiliation: (1) SRI International, 333 Ravenswood Avenue, MS 410-33, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 09/11/1997 Accepted Date: 19/01/1998
language: English
source:
identifier: ISSN: 0361-5235
fulltext: fulltext
issn:
  • 0361-5235
  • 03615235
url: Link


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titleLithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and CdTe-based substrates.(Author abstract)(Report)
creatorBerding, M. A. ; Sher, A. ; Schilfgaarde, M.
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identifierISSN: 0361-5235
subjectCadmium Compounds
descriptionByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Copper; defects; doping; HgCdTe; lithium; sodium Abstract: We present a theoretical examination of the behavior of lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and in CdTe. In both HgCdTe and CdTe, all three impurities are determined to incorporate predominantly on the cation sublattice for most pressures and temperatures, where all the impurities have acceptor levels. All three impurities have secondary incorporation as interstitials, where they all behave as donors. Under conditions present in low-temperature, mercury-saturated anneals, lithium and sodium are mobilized because of the relatively high interstitial fraction, lower solubility, and an exothermic impurity kick-out reaction when the material is subjected to an injection of mercury interstitials. Strain effects on the impurity incorporation are small and do not provide a strong driving force for these impurities to segregate. By examining the relative behavior of the impurities in CdTe and HgCdTe, we have derived prescriptions for maximizing gettering the impurities from CdTe-based sub-strates using a sacrificial HgCdTe epilayer, and for minimizing gettering from the substrates during epilayer growth. Author Affiliation: (1) SRI International, 333 Ravenswood Avenue, MS 410-33, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 09/11/1997 Accepted Date: 19/01/1998
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descriptionByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Copper; defects; doping; HgCdTe; lithium; sodium Abstract: We present a theoretical examination of the behavior of lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and in CdTe. In both HgCdTe and CdTe, all three impurities are determined to incorporate predominantly on the cation sublattice for most pressures and temperatures, where all the impurities have acceptor levels. All three impurities have secondary incorporation as interstitials, where they all behave as donors. Under conditions present in low-temperature, mercury-saturated anneals, lithium and sodium are mobilized because of the relatively high interstitial fraction, lower solubility, and an exothermic impurity kick-out reaction when the material is subjected to an injection of mercury interstitials. Strain effects on the impurity incorporation are small and do not provide a strong driving force for these impurities to segregate. By examining the relative behavior of the impurities in CdTe and HgCdTe, we have derived prescriptions for maximizing gettering the impurities from CdTe-based sub-strates using a sacrificial HgCdTe epilayer, and for minimizing gettering from the substrates during epilayer growth. Author Affiliation: (1) SRI International, 333 Ravenswood Avenue, MS 410-33, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 09/11/1997 Accepted Date: 19/01/1998
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abstractByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Copper; defects; doping; HgCdTe; lithium; sodium Abstract: We present a theoretical examination of the behavior of lithium, sodium, and copper in [Hg.sub.0.78][Cd.sub.0.22]Te and in CdTe. In both HgCdTe and CdTe, all three impurities are determined to incorporate predominantly on the cation sublattice for most pressures and temperatures, where all the impurities have acceptor levels. All three impurities have secondary incorporation as interstitials, where they all behave as donors. Under conditions present in low-temperature, mercury-saturated anneals, lithium and sodium are mobilized because of the relatively high interstitial fraction, lower solubility, and an exothermic impurity kick-out reaction when the material is subjected to an injection of mercury interstitials. Strain effects on the impurity incorporation are small and do not provide a strong driving force for these impurities to segregate. By examining the relative behavior of the impurities in CdTe and HgCdTe, we have derived prescriptions for maximizing gettering the impurities from CdTe-based sub-strates using a sacrificial HgCdTe epilayer, and for minimizing gettering from the substrates during epilayer growth. Author Affiliation: (1) SRI International, 333 Ravenswood Avenue, MS 410-33, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 09/11/1997 Accepted Date: 19/01/1998
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