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MBE growth and characterization of in situ arsenic doped HgCdTe.(Author abstract)(Report)

Byline: A. C. Chen (1), M. Zandian (1), D. D. Edwall (1), R. E. Wames (1), P. S. Wijewarnasuriya (1), J. M. Arias (1), S. Sivananthan (2), M. Berding (3), A. Sher (3) Keywords: Arsenic doping; HgCdTe; molecular beam epitaxy (MBE); p-type doping Abstract: We report the results of in situ arsenic dopi... Full description

Journal Title: Journal of Electronic Materials June, 1998, Vol.27(6), p.595(5)
Main Author: Chen, A. C.
Other Authors: Zandian, M. , Edwall, D. D. , Wames, R. E. , Wijewarnasuriya, P. S. , Arias, J. M. , Sivananthan, S. , Berding, M. , Sher, A.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235
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recordid: gale_ofa169068878
title: MBE growth and characterization of in situ arsenic doped HgCdTe.(Author abstract)(Report)
format: Article
creator:
  • Chen, A. C.
  • Zandian, M.
  • Edwall, D. D.
  • Wames, R. E.
  • Wijewarnasuriya, P. S.
  • Arias, J. M.
  • Sivananthan, S.
  • Berding, M.
  • Sher, A.
subjects:
  • Epitaxy -- Growth
  • Arsenic -- Growth
  • Cadmium Compounds -- Growth
ispartof: Journal of Electronic Materials, June, 1998, Vol.27(6), p.595(5)
description: Byline: A. C. Chen (1), M. Zandian (1), D. D. Edwall (1), R. E. Wames (1), P. S. Wijewarnasuriya (1), J. M. Arias (1), S. Sivananthan (2), M. Berding (3), A. Sher (3) Keywords: Arsenic doping; HgCdTe; molecular beam epitaxy (MBE); p-type doping Abstract: We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single [Hg.sub.1-x][Cd.sub.x]Te layers of x [proportional to]0.3 were grown at a lower growth temperature of 175degC to increase the arsenic incorporation into the layers. Layers grown at 175degC have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm.sup.-2. Void defect densities can routinely be achieved at levels below 1000 cm.sup.-2. Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry. Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300degC results in activation of the arsenic at concentrations ranging from 2E16 to 2E18 cm.sup.-3. Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation after isothermal anneals at 436 or 300degC. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient. Author Affiliation: (1) Rockwell Science Center, 1049 Camino Dos Rios, 91360, Thousand Oaks, CA (2) Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room 2236, 60680, Chicago, IL (3) SRI International, 333 Ravenswood Avenue, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 06/11/1997 Accepted Date: 20/01/1998
language: English
source:
identifier: ISSN: 0361-5235
fulltext: fulltext
issn:
  • 0361-5235
  • 03615235
url: Link


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titleMBE growth and characterization of in situ arsenic doped HgCdTe.(Author abstract)(Report)
creatorChen, A. C. ; Zandian, M. ; Edwall, D. D. ; Wames, R. E. ; Wijewarnasuriya, P. S. ; Arias, J. M. ; Sivananthan, S. ; Berding, M. ; Sher, A.
ispartofJournal of Electronic Materials, June, 1998, Vol.27(6), p.595(5)
identifierISSN: 0361-5235
subjectEpitaxy -- Growth ; Arsenic -- Growth ; Cadmium Compounds -- Growth
descriptionByline: A. C. Chen (1), M. Zandian (1), D. D. Edwall (1), R. E. Wames (1), P. S. Wijewarnasuriya (1), J. M. Arias (1), S. Sivananthan (2), M. Berding (3), A. Sher (3) Keywords: Arsenic doping; HgCdTe; molecular beam epitaxy (MBE); p-type doping Abstract: We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single [Hg.sub.1-x][Cd.sub.x]Te layers of x [proportional to]0.3 were grown at a lower growth temperature of 175degC to increase the arsenic incorporation into the layers. Layers grown at 175degC have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm.sup.-2. Void defect densities can routinely be achieved at levels below 1000 cm.sup.-2. Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry. Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300degC results in activation of the arsenic at concentrations ranging from 2E16 to 2E18 cm.sup.-3. Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation after isothermal anneals at 436 or 300degC. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient. Author Affiliation: (1) Rockwell Science Center, 1049 Camino Dos Rios, 91360, Thousand Oaks, CA (2) Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room 2236, 60680, Chicago, IL (3) SRI International, 333 Ravenswood Avenue, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 06/11/1997 Accepted Date: 20/01/1998
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titleMBE growth and characterization of in situ arsenic doped HgCdTe.(Author abstract)(Report)
descriptionByline: A. C. Chen (1), M. Zandian (1), D. D. Edwall (1), R. E. Wames (1), P. S. Wijewarnasuriya (1), J. M. Arias (1), S. Sivananthan (2), M. Berding (3), A. Sher (3) Keywords: Arsenic doping; HgCdTe; molecular beam epitaxy (MBE); p-type doping Abstract: We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single [Hg.sub.1-x][Cd.sub.x]Te layers of x [proportional to]0.3 were grown at a lower growth temperature of 175degC to increase the arsenic incorporation into the layers. Layers grown at 175degC have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm.sup.-2. Void defect densities can routinely be achieved at levels below 1000 cm.sup.-2. Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry. Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300degC results in activation of the arsenic at concentrations ranging from 2E16 to 2E18 cm.sup.-3. Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation after isothermal anneals at 436 or 300degC. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient. Author Affiliation: (1) Rockwell Science Center, 1049 Camino Dos Rios, 91360, Thousand Oaks, CA (2) Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room 2236, 60680, Chicago, IL (3) SRI International, 333 Ravenswood Avenue, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 06/11/1997 Accepted Date: 20/01/1998
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abstractByline: A. C. Chen (1), M. Zandian (1), D. D. Edwall (1), R. E. Wames (1), P. S. Wijewarnasuriya (1), J. M. Arias (1), S. Sivananthan (2), M. Berding (3), A. Sher (3) Keywords: Arsenic doping; HgCdTe; molecular beam epitaxy (MBE); p-type doping Abstract: We report the results of in situ arsenic doping by molecular beam epitaxy using an elemental arsenic source. Single [Hg.sub.1-x][Cd.sub.x]Te layers of x [proportional to]0.3 were grown at a lower growth temperature of 175degC to increase the arsenic incorporation into the layers. Layers grown at 175degC have shown typical etch pit densities of 2E6 with achievable densities as low as 7E4cm.sup.-2. Void defect densities can routinely be achieved at levels below 1000 cm.sup.-2. Double crystal x-ray diffraction rocking curves exhibit typical full width at half-maximum values of 23 arcsec indicating high structural quality. Arsenic incorporation into the HgCdTe layers was confirmed using secondary ion mass spectrometry. Isothermal annealing of HgCdTe:As layers at temperatures of either 436 or 300degC results in activation of the arsenic at concentrations ranging from 2E16 to 2E18 cm.sup.-3. Theoretical fits to variable temperature Hall measurements indicate that layers are not compensated, with near 100% activation after isothermal anneals at 436 or 300degC. Arsenic activation energies and 77K minority carrier lifetime measurements are consistent with published literature values. SIMS analyses of annealed arsenic doping profiles confirm a low arsenic diffusion coefficient. Author Affiliation: (1) Rockwell Science Center, 1049 Camino Dos Rios, 91360, Thousand Oaks, CA (2) Microphysics Laboratory, Department of Physics (M/C 273), University of Illinois at Chicago, 845 W. Taylor St., Room 2236, 60680, Chicago, IL (3) SRI International, 333 Ravenswood Avenue, 94025, Menlo Park, CA Article History: Registration Date: 27/03/1998 Received Date: 06/11/1997 Accepted Date: 20/01/1998
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