schliessen

Filtern

 

Bibliotheken

Modeling of arsenic activation in HgCdTe.(Author abstract)(Report)

Byline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1), A. C. Chen (2), J. Arias (2) Keywords: Arsenic; defects; doping; HgCdTe Abstract: We present a theoretical examination of the behavior of arsenic atoms in [Hg.sub.1-x][Cd.sub.x]Te for x=0.3, focusing on the thermodynamic conditions that mo... Full description

Journal Title: Journal of Electronic Materials June, 1998, Vol.27(6), p.605(5)
Main Author: Berding, M. A.
Other Authors: Sher, A. , Schilfgaarde, M. , Chen, A. C. , Arias, J.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235
Zum Text:
SendSend as email Add to Book BagAdd to Book Bag
Staff View
recordid: gale_ofa169068880
title: Modeling of arsenic activation in HgCdTe.(Author abstract)(Report)
format: Article
creator:
  • Berding, M. A.
  • Sher, A.
  • Schilfgaarde, M.
  • Chen, A. C.
  • Arias, J.
subjects:
  • Epitaxy -- Analysis
  • Arsenic -- Analysis
  • Cadmium Compounds -- Analysis
ispartof: Journal of Electronic Materials, June, 1998, Vol.27(6), p.605(5)
description: Byline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1), A. C. Chen (2), J. Arias (2) Keywords: Arsenic; defects; doping; HgCdTe Abstract: We present a theoretical examination of the behavior of arsenic atoms in [Hg.sub.1-x][Cd.sub.x]Te for x=0.3, focusing on the thermodynamic conditions that most closely mimic molecular beam epitaxial growth and subsequent annealing steps. We show that, for molecular beam epitaxial growth where tellurium-saturated conditions apply, arsenic incorporates onto the cation sublattice and becomes inactive. A significant fraction of these arsenic atoms are bound to mercury vacancies. We also propose a model of the activation, which involves transfer of the arsenic from the cation to the anion sublattice. The model suggests that activation anneals must be done at high enough temperatures to surmount an activation barrier, and that the phase field from tellurium- to mercury-rich conditions should be traversed slowly enough so that the cation vacancies are not filled before the site transfer can be completed. Author Affiliation: (1) SRI International, Menlo Park, CA (2) Rockwell International Corporation, Thousand Oaks, CA Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 24/12/1997
language: English
source:
identifier: ISSN: 0361-5235
fulltext: fulltext
issn:
  • 0361-5235
  • 03615235
url: Link


@attributes
ID944799282
RANK0.07
NO1
SEARCH_ENGINEprimo_central_multiple_fe
SEARCH_ENGINE_TYPEPrimo Central Search Engine
LOCALfalse
PrimoNMBib
record
control
sourcerecordid169068880
sourceidgale_ofa
recordidTN_gale_ofa169068880
sourceformatXML
sourcesystemPC
pqid204860130
galeid169068880
display
typearticle
titleModeling of arsenic activation in HgCdTe.(Author abstract)(Report)
creatorBerding, M. A. ; Sher, A. ; Schilfgaarde, M. ; Chen, A. C. ; Arias, J.
ispartofJournal of Electronic Materials, June, 1998, Vol.27(6), p.605(5)
identifierISSN: 0361-5235
subjectEpitaxy -- Analysis ; Arsenic -- Analysis ; Cadmium Compounds -- Analysis
descriptionByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1), A. C. Chen (2), J. Arias (2) Keywords: Arsenic; defects; doping; HgCdTe Abstract: We present a theoretical examination of the behavior of arsenic atoms in [Hg.sub.1-x][Cd.sub.x]Te for x=0.3, focusing on the thermodynamic conditions that most closely mimic molecular beam epitaxial growth and subsequent annealing steps. We show that, for molecular beam epitaxial growth where tellurium-saturated conditions apply, arsenic incorporates onto the cation sublattice and becomes inactive. A significant fraction of these arsenic atoms are bound to mercury vacancies. We also propose a model of the activation, which involves transfer of the arsenic from the cation to the anion sublattice. The model suggests that activation anneals must be done at high enough temperatures to surmount an activation barrier, and that the phase field from tellurium- to mercury-rich conditions should be traversed slowly enough so that the cation vacancies are not filled before the site transfer can be completed. Author Affiliation: (1) SRI International, Menlo Park, CA (2) Rockwell International Corporation, Thousand Oaks, CA Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 24/12/1997
languageEnglish
source
version4
lds50peer_reviewed
links
openurl$$Topenurl_article
openurlfulltext$$Topenurlfull_article
search
scope
0gale_onefilea
1OneFile
creatorcontrib
0Berding, M. A
1M. A. Berding
2Sher, A
3Schilfgaarde, M
4Chen, A. C
5Arias, J
titleModeling of arsenic activation in HgCdTe.(Author abstract)(Report)
descriptionByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1), A. C. Chen (2), J. Arias (2) Keywords: Arsenic; defects; doping; HgCdTe Abstract: We present a theoretical examination of the behavior of arsenic atoms in [Hg.sub.1-x][Cd.sub.x]Te for x=0.3, focusing on the thermodynamic conditions that most closely mimic molecular beam epitaxial growth and subsequent annealing steps. We show that, for molecular beam epitaxial growth where tellurium-saturated conditions apply, arsenic incorporates onto the cation sublattice and becomes inactive. A significant fraction of these arsenic atoms are bound to mercury vacancies. We also propose a model of the activation, which involves transfer of the arsenic from the cation to the anion sublattice. The model suggests that activation anneals must be done at high enough temperatures to surmount an activation barrier, and that the phase field from tellurium- to mercury-rich conditions should be traversed slowly enough so that the cation vacancies are not filled before the site transfer can be completed. Author Affiliation: (1) SRI International, Menlo Park, CA (2) Rockwell International Corporation, Thousand Oaks, CA Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 24/12/1997
subject
0Epitaxy--Analysis
1Arsenic--Analysis
2Cadmium compounds--Analysis
32819
4Industrial inorganic chemicals, not elsewhere classified
5All Other Basic Inorganic Chemical Manufacturing
6325188
7Knowledge-based system
general
0English
1Springer
2Cengage Learning, Inc.
sourceidgale_ofa
recordidgale_ofa169068880
issn
00361-5235
103615235
rsrctypearticle
creationdate1998
recordtypearticle
addtitleJournal of Electronic Materials
searchscopeOneFile
lsr30VSR-Enriched:[pages, doi, galeid, eissn, pqid]
sort
titleModeling of arsenic activation in HgCdTe.(Author abstract)(Report)
authorBerding, M. A. ; Sher, A. ; Schilfgaarde, M. ; Chen, A. C. ; Arias, J.
creationdate19980601
facets
frbrgroupid6838959015257067808
frbrtype5
languageeng
creationdate1998
topic
0Epitaxy–Analysis
1Arsenic–Analysis
2Cadmium Compounds–Analysis
collectionOneFile (GALE)
prefilterarticles
rsrctypearticles
creatorcontrib
0Berding, M. A.
1Sher, A.
2Schilfgaarde, M.
3Chen, A. C.
4Arias, J.
jtitleJournal of Electronic Materials
toplevelpeer_reviewed
frbr
t2
k11998
k203615235
k427
k56
k6605
k7journal of electronic materials
k8modeling of arsenic activation in hgcdte
k9modelingofarsenicactgcdte
k12modelingofarsenicactivati
k15maberding
k16berdingma
delivery
delcategoryRemote Search Resource
fulltextfulltext
ranking
booster11
booster21
pcg_typeaggregator
addata
au
0Berding, M. A.
1Sher, A.
2Schilfgaarde, M.
3Chen, A. C.
4Arias, J.
atitleModeling of arsenic activation in HgCdTe.(Author abstract)(Report)
jtitleJournal of Electronic Materials
risdate19980601
volume27
issue6
spage605
issn0361-5235
genrearticle
ristypeJOUR
abstractByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1), A. C. Chen (2), J. Arias (2) Keywords: Arsenic; defects; doping; HgCdTe Abstract: We present a theoretical examination of the behavior of arsenic atoms in [Hg.sub.1-x][Cd.sub.x]Te for x=0.3, focusing on the thermodynamic conditions that most closely mimic molecular beam epitaxial growth and subsequent annealing steps. We show that, for molecular beam epitaxial growth where tellurium-saturated conditions apply, arsenic incorporates onto the cation sublattice and becomes inactive. A significant fraction of these arsenic atoms are bound to mercury vacancies. We also propose a model of the activation, which involves transfer of the arsenic from the cation to the anion sublattice. The model suggests that activation anneals must be done at high enough temperatures to surmount an activation barrier, and that the phase field from tellurium- to mercury-rich conditions should be traversed slowly enough so that the cation vacancies are not filled before the site transfer can be completed. Author Affiliation: (1) SRI International, Menlo Park, CA (2) Rockwell International Corporation, Thousand Oaks, CA Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 24/12/1997
pubSpringer
lad01gale_ofa
pages605-609
doi10.1007/s11664-998-0023-5
eissn1543186X
date1998-06-01