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Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys.(Author abstract)(Report)

Byline: Srinivasan Krishnamurthy (1), A. -B. Chen (2), A. Sher (1) Keywords: Auger rate; band structure; HgCdTe; minority carrier lifetime; thallium alloys Abstract: We have calculated the full band structures-based minority carrier lifetimes in small-gap semiconductor alloys. The contribution from... Full description

Journal Title: Journal of Electronic Materials June, 1998, Vol.27(6), p.694(4)
Main Author: Krishnamurthy, Srinivasan
Other Authors: Chen, A. - B. , Sher, A.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235
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recordid: gale_ofa169068896
title: Full band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys.(Author abstract)(Report)
format: Article
creator:
  • Krishnamurthy, Srinivasan
  • Chen, A. - B.
  • Sher, A.
subjects:
  • Alloys
  • Cadmium Compounds
ispartof: Journal of Electronic Materials, June, 1998, Vol.27(6), p.694(4)
description: Byline: Srinivasan Krishnamurthy (1), A. -B. Chen (2), A. Sher (1) Keywords: Auger rate; band structure; HgCdTe; minority carrier lifetime; thallium alloys Abstract: We have calculated the full band structures-based minority carrier lifetimes in small-gap semiconductor alloys. The contribution from first-order Coulomb interactions and second-order electron-electron interactions coupled through optical phonons are included. Our results agree reasonably well with experiments in [Hg.sub.0.78][Cd.sub.0.22]Te. Similar calculations were carried out for lifetimes in [In.sub.0.67][Tl.sub.0.33]P, [In.sub.0.85][Tl.sub.0.15]As, and [In.sub.0.92][Tl.sub.0.08]Sb. The minority carrier lifetimes in [In.sub.0.67][Tl.sub.0.33]P and [In.sub.0.92][Tl.sub.0.08]Sb are shorter than that in [Hg.sub.0.78][Cd.sub.0.22]Te at all temperatures. However, the low-temperature minority carrier lifetime in [In.sub.0.85]Tl.sub.0.15 As is an order of magnitude longer than that in [Hg.sub.0.78][Cd.sub.0.22]Te. Our calculations further suggest the possibility of increasing the lifetimes of minority carriers either by decreasing the density of states inside a critical energy and momentum region or by increasing the total hole population outside that critical region. Experimental observations that substantiate this suggestion are discussed. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA (2) Physics Department, Auburn University, 36349, AL Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 12/01/1998
language: English
source:
identifier: ISSN: 0361-5235
fulltext: fulltext
issn:
  • 0361-5235
  • 03615235
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titleFull band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys.(Author abstract)(Report)
creatorKrishnamurthy, Srinivasan ; Chen, A. - B. ; Sher, A.
ispartofJournal of Electronic Materials, June, 1998, Vol.27(6), p.694(4)
identifierISSN: 0361-5235
subjectAlloys ; Cadmium Compounds
descriptionByline: Srinivasan Krishnamurthy (1), A. -B. Chen (2), A. Sher (1) Keywords: Auger rate; band structure; HgCdTe; minority carrier lifetime; thallium alloys Abstract: We have calculated the full band structures-based minority carrier lifetimes in small-gap semiconductor alloys. The contribution from first-order Coulomb interactions and second-order electron-electron interactions coupled through optical phonons are included. Our results agree reasonably well with experiments in [Hg.sub.0.78][Cd.sub.0.22]Te. Similar calculations were carried out for lifetimes in [In.sub.0.67][Tl.sub.0.33]P, [In.sub.0.85][Tl.sub.0.15]As, and [In.sub.0.92][Tl.sub.0.08]Sb. The minority carrier lifetimes in [In.sub.0.67][Tl.sub.0.33]P and [In.sub.0.92][Tl.sub.0.08]Sb are shorter than that in [Hg.sub.0.78][Cd.sub.0.22]Te at all temperatures. However, the low-temperature minority carrier lifetime in [In.sub.0.85]Tl.sub.0.15 As is an order of magnitude longer than that in [Hg.sub.0.78][Cd.sub.0.22]Te. Our calculations further suggest the possibility of increasing the lifetimes of minority carriers either by decreasing the density of states inside a critical energy and momentum region or by increasing the total hole population outside that critical region. Experimental observations that substantiate this suggestion are discussed. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA (2) Physics Department, Auburn University, 36349, AL Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 12/01/1998
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titleFull band structure calculation of minority carrier lifetimes in HgCdTe and thallium-based alloys.(Author abstract)(Report)
descriptionByline: Srinivasan Krishnamurthy (1), A. -B. Chen (2), A. Sher (1) Keywords: Auger rate; band structure; HgCdTe; minority carrier lifetime; thallium alloys Abstract: We have calculated the full band structures-based minority carrier lifetimes in small-gap semiconductor alloys. The contribution from first-order Coulomb interactions and second-order electron-electron interactions coupled through optical phonons are included. Our results agree reasonably well with experiments in [Hg.sub.0.78][Cd.sub.0.22]Te. Similar calculations were carried out for lifetimes in [In.sub.0.67][Tl.sub.0.33]P, [In.sub.0.85][Tl.sub.0.15]As, and [In.sub.0.92][Tl.sub.0.08]Sb. The minority carrier lifetimes in [In.sub.0.67][Tl.sub.0.33]P and [In.sub.0.92][Tl.sub.0.08]Sb are shorter than that in [Hg.sub.0.78][Cd.sub.0.22]Te at all temperatures. However, the low-temperature minority carrier lifetime in [In.sub.0.85]Tl.sub.0.15 As is an order of magnitude longer than that in [Hg.sub.0.78][Cd.sub.0.22]Te. Our calculations further suggest the possibility of increasing the lifetimes of minority carriers either by decreasing the density of states inside a critical energy and momentum region or by increasing the total hole population outside that critical region. Experimental observations that substantiate this suggestion are discussed. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA (2) Physics Department, Auburn University, 36349, AL Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 12/01/1998
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abstractByline: Srinivasan Krishnamurthy (1), A. -B. Chen (2), A. Sher (1) Keywords: Auger rate; band structure; HgCdTe; minority carrier lifetime; thallium alloys Abstract: We have calculated the full band structures-based minority carrier lifetimes in small-gap semiconductor alloys. The contribution from first-order Coulomb interactions and second-order electron-electron interactions coupled through optical phonons are included. Our results agree reasonably well with experiments in [Hg.sub.0.78][Cd.sub.0.22]Te. Similar calculations were carried out for lifetimes in [In.sub.0.67][Tl.sub.0.33]P, [In.sub.0.85][Tl.sub.0.15]As, and [In.sub.0.92][Tl.sub.0.08]Sb. The minority carrier lifetimes in [In.sub.0.67][Tl.sub.0.33]P and [In.sub.0.92][Tl.sub.0.08]Sb are shorter than that in [Hg.sub.0.78][Cd.sub.0.22]Te at all temperatures. However, the low-temperature minority carrier lifetime in [In.sub.0.85]Tl.sub.0.15 As is an order of magnitude longer than that in [Hg.sub.0.78][Cd.sub.0.22]Te. Our calculations further suggest the possibility of increasing the lifetimes of minority carriers either by decreasing the density of states inside a critical energy and momentum region or by increasing the total hole population outside that critical region. Experimental observations that substantiate this suggestion are discussed. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA (2) Physics Department, Auburn University, 36349, AL Article History: Registration Date: 27/03/1998 Received Date: 21/10/1997 Accepted Date: 12/01/1998
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