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Behavior of p-type dopants in HgCdTe.(Author abstract)(Report)

Byline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Amphoteric dopants; doping; HgCdTe Abstract: Obtaining high concentrations of active p-type dopants in HgCdTe is an issue of much current interest. We discuss the results of our calculations on column IB and VA dopants. The full-p... Full description

Journal Title: Journal of Electronic Materials June, 1997, Vol.26(6), p.625(4)
Main Author: Berding, M. A.
Other Authors: Sher, A. , Schilfgaarde, M.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0361-5235
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recordid: gale_ofa169124671
title: Behavior of p-type dopants in HgCdTe.(Author abstract)(Report)
format: Article
creator:
  • Berding, M. A.
  • Sher, A.
  • Schilfgaarde, M.
subjects:
  • Cadmium Compounds
ispartof: Journal of Electronic Materials, June, 1997, Vol.26(6), p.625(4)
description: Byline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Amphoteric dopants; doping; HgCdTe Abstract: Obtaining high concentrations of active p-type dopants in HgCdTe is an issue of much current interest. We discuss the results of our calculations on column IB and VA dopants. The full-potential linear muffin-tin orbital method, based on the local density approximation is used to calculate electronic total energies and localized levels in the band gap. Free energies are predicted and incorporated into a thermodynamical model to calculate impurity and native defect concentrations as a function of temperature, stoichiometry, and total impurity density. Copper, silver, and gold are found to be incorporated nearly exclusively on the metal sublattice and to be 100% active for all near-equilibrium growth and processing conditions. The density of interstitial copper is high enough to impact copper diffusion. In contrast, significant concentrations of phosphorus, arsenic, and antimony are found on the metal sublattice where they behave as n-type dopants, accounting for highly compensated, or even n-type material, depending on the equilibration temperature and equivalent mercury partial pressure. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA Article History: Registration Date: 26/06/1997 Received Date: 19/11/1996 Accepted Date: 27/02/1997
language: English
source:
identifier: ISSN: 0361-5235
fulltext: fulltext
issn:
  • 0361-5235
  • 03615235
url: Link


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titleBehavior of p-type dopants in HgCdTe.(Author abstract)(Report)
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descriptionByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Amphoteric dopants; doping; HgCdTe Abstract: Obtaining high concentrations of active p-type dopants in HgCdTe is an issue of much current interest. We discuss the results of our calculations on column IB and VA dopants. The full-potential linear muffin-tin orbital method, based on the local density approximation is used to calculate electronic total energies and localized levels in the band gap. Free energies are predicted and incorporated into a thermodynamical model to calculate impurity and native defect concentrations as a function of temperature, stoichiometry, and total impurity density. Copper, silver, and gold are found to be incorporated nearly exclusively on the metal sublattice and to be 100% active for all near-equilibrium growth and processing conditions. The density of interstitial copper is high enough to impact copper diffusion. In contrast, significant concentrations of phosphorus, arsenic, and antimony are found on the metal sublattice where they behave as n-type dopants, accounting for highly compensated, or even n-type material, depending on the equilibration temperature and equivalent mercury partial pressure. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA Article History: Registration Date: 26/06/1997 Received Date: 19/11/1996 Accepted Date: 27/02/1997
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titleBehavior of p-type dopants in HgCdTe.(Author abstract)(Report)
descriptionByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Amphoteric dopants; doping; HgCdTe Abstract: Obtaining high concentrations of active p-type dopants in HgCdTe is an issue of much current interest. We discuss the results of our calculations on column IB and VA dopants. The full-potential linear muffin-tin orbital method, based on the local density approximation is used to calculate electronic total energies and localized levels in the band gap. Free energies are predicted and incorporated into a thermodynamical model to calculate impurity and native defect concentrations as a function of temperature, stoichiometry, and total impurity density. Copper, silver, and gold are found to be incorporated nearly exclusively on the metal sublattice and to be 100% active for all near-equilibrium growth and processing conditions. The density of interstitial copper is high enough to impact copper diffusion. In contrast, significant concentrations of phosphorus, arsenic, and antimony are found on the metal sublattice where they behave as n-type dopants, accounting for highly compensated, or even n-type material, depending on the equilibration temperature and equivalent mercury partial pressure. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA Article History: Registration Date: 26/06/1997 Received Date: 19/11/1996 Accepted Date: 27/02/1997
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abstractByline: M. A. Berding (1), A. Sher (1), M. Schilfgaarde (1) Keywords: Amphoteric dopants; doping; HgCdTe Abstract: Obtaining high concentrations of active p-type dopants in HgCdTe is an issue of much current interest. We discuss the results of our calculations on column IB and VA dopants. The full-potential linear muffin-tin orbital method, based on the local density approximation is used to calculate electronic total energies and localized levels in the band gap. Free energies are predicted and incorporated into a thermodynamical model to calculate impurity and native defect concentrations as a function of temperature, stoichiometry, and total impurity density. Copper, silver, and gold are found to be incorporated nearly exclusively on the metal sublattice and to be 100% active for all near-equilibrium growth and processing conditions. The density of interstitial copper is high enough to impact copper diffusion. In contrast, significant concentrations of phosphorus, arsenic, and antimony are found on the metal sublattice where they behave as n-type dopants, accounting for highly compensated, or even n-type material, depending on the equilibration temperature and equivalent mercury partial pressure. Author Affiliation: (1) SRI International, 94025, Menlo Park, CA Article History: Registration Date: 26/06/1997 Received Date: 19/11/1996 Accepted Date: 27/02/1997
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