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Electronic properties of W-encapsulated Si cluster film on Si (100) substrates.(silicon)(Report)

Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) are used to study the thin films composed of W-encapsulated Si clusters (W[Si.sub.10]) grown on Si substrates. The Si-[L.sub.23] absorption edge spectra observed for W[Si.sub.10] cluster film demonstrated t... Full description

Journal Title: Journal of Applied Physics March 15, 2012, Vol.111(6), p.063719-1-063719-5
Main Author: Park, S. J.
Other Authors: Uchida, N. , Tada, T. , Kanayama, T.
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0021-8979
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recordid: gale_ofa295693769
title: Electronic properties of W-encapsulated Si cluster film on Si (100) substrates.(silicon)(Report)
format: Article
creator:
  • Park, S. J.
  • Uchida, N.
  • Tada, T.
  • Kanayama, T.
subjects:
  • Electrical Insulators -- Usage
  • Semiconductors (Materials) -- Usage
  • Transmission Electron Microscopes -- Technology Application
  • Tungsten Compounds -- Optical Properties
  • Tungsten Compounds -- Thermal Properties
  • X-ray Spectroscopy -- Usage
ispartof: Journal of Applied Physics, March 15, 2012, Vol.111(6), p.063719-1-063719-5
description: Scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) are used to study the thin films composed of W-encapsulated Si clusters (W[Si.sub.10]) grown on Si substrates. The Si-[L.sub.23] absorption edge spectra observed for W[Si.sub.10] cluster film demonstrated that the conduction-band density of states in Si could be modified by hybridization between Si and W atoms.
language: English
source:
identifier: ISSN: 0021-8979
fulltext: fulltext
issn:
  • 0021-8979
  • 00218979
url: Link


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titleElectronic properties of W-encapsulated Si cluster film on Si (100) substrates.(silicon)(Report)
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subjectElectrical Insulators -- Usage ; Semiconductors (Materials) -- Usage ; Transmission Electron Microscopes -- Technology Application ; Tungsten Compounds -- Optical Properties ; Tungsten Compounds -- Thermal Properties ; X-ray Spectroscopy -- Usage
descriptionScanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) are used to study the thin films composed of W-encapsulated Si clusters (W[Si.sub.10]) grown on Si substrates. The Si-[L.sub.23] absorption edge spectra observed for W[Si.sub.10] cluster film demonstrated that the conduction-band density of states in Si could be modified by hybridization between Si and W atoms.
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titleElectronic properties of W-encapsulated Si cluster film on Si (100) substrates.(silicon)(Report)
descriptionScanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) are used to study the thin films composed of W-encapsulated Si clusters (W[Si.sub.10]) grown on Si substrates. The Si-[L.sub.23] absorption edge spectra observed for W[Si.sub.10] cluster film demonstrated that the conduction-band density of states in Si could be modified by hybridization between Si and W atoms.
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abstractScanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) are used to study the thin films composed of W-encapsulated Si clusters (W[Si.sub.10]) grown on Si substrates. The Si-[L.sub.23] absorption edge spectra observed for W[Si.sub.10] cluster film demonstrated that the conduction-band density of states in Si could be modified by hybridization between Si and W atoms.
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