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Thermoelectric properties of Mg doped p-type BiCuSeO oxyselenides.(Report)

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jallcom.2012.10.160 Byline: Jing Li (a), Jiehe Sui (a), Celine Barreteau (b), David Berardan (b), Nita Dragoe (b), Wei Cai (a), Yanling Pei (c), Li-Dong Zhao (b) Keywords: BiCuSeO; Thermoelectric; Electrical c... Full description

Journal Title: Journal of Alloys and Compounds Feb 25, 2013, Vol.551, p.649(5)
Main Author: Li, Jing
Other Authors: Sui, Jiehe , Barreteau, Celine , Berardan, David , Dragoe, Nita , Cai, Wei , Pei, Yanling , Zhao, Li - Dong
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Cengage Learning, Inc.
ID: ISSN: 0925-8388
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recordid: gale_ofa314769079
title: Thermoelectric properties of Mg doped p-type BiCuSeO oxyselenides.(Report)
format: Article
creator:
  • Li, Jing
  • Sui, Jiehe
  • Barreteau, Celine
  • Berardan, David
  • Dragoe, Nita
  • Cai, Wei
  • Pei, Yanling
  • Zhao, Li - Dong
subjects:
  • Electrical Conductivity -- Analysis
ispartof: Journal of Alloys and Compounds, Feb 25, 2013, Vol.551, p.649(5)
description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jallcom.2012.10.160 Byline: Jing Li (a), Jiehe Sui (a), Celine Barreteau (b), David Berardan (b), Nita Dragoe (b), Wei Cai (a), Yanling Pei (c), Li-Dong Zhao (b) Keywords: BiCuSeO; Thermoelectric; Electrical conductivity; Seebeck coefficient; Thermal conductivity Abstract: a* We show that Mg2+ doping on the Bi3+ site can be used to increase the charge carrier concentrations. a* Mg doping has a lower limited doping efficiency, contrary to those of alkali metals (Ca, Sr and Ba). a* The lattice thermal conductivity can be reduced by the excess MgO located at the grain boundaries. a* A ZT value of 0.67 has been acheived at 923K for Bi0.95Mg0.05CuSeO. Author Affiliation: (a) National Key Laboratory Precision Hot Processing of Metals, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China (b) LEMHE, ICMMO (CNRS UMR 8182), Univ. Paris Sud, Orsay F91405, France (c) School of Materials Science and Engineering, Beihang University, Beijing 100191, China Article History: Received 21 September 2012; Revised 26 October 2012; Accepted 28 October 2012
language: English
source: Cengage Learning, Inc.
identifier: ISSN: 0925-8388
fulltext: fulltext
issn:
  • 0925-8388
  • 09258388
url: Link


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titleThermoelectric properties of Mg doped p-type BiCuSeO oxyselenides.(Report)
creatorLi, Jing ; Sui, Jiehe ; Barreteau, Celine ; Berardan, David ; Dragoe, Nita ; Cai, Wei ; Pei, Yanling ; Zhao, Li - Dong
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descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jallcom.2012.10.160 Byline: Jing Li (a), Jiehe Sui (a), Celine Barreteau (b), David Berardan (b), Nita Dragoe (b), Wei Cai (a), Yanling Pei (c), Li-Dong Zhao (b) Keywords: BiCuSeO; Thermoelectric; Electrical conductivity; Seebeck coefficient; Thermal conductivity Abstract: a* We show that Mg2+ doping on the Bi3+ site can be used to increase the charge carrier concentrations. a* Mg doping has a lower limited doping efficiency, contrary to those of alkali metals (Ca, Sr and Ba). a* The lattice thermal conductivity can be reduced by the excess MgO located at the grain boundaries. a* A ZT value of 0.67 has been acheived at 923K for Bi0.95Mg0.05CuSeO. Author Affiliation: (a) National Key Laboratory Precision Hot Processing of Metals, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China (b) LEMHE, ICMMO (CNRS UMR 8182), Univ. Paris Sud, Orsay F91405, France (c) School of Materials Science and Engineering, Beihang University, Beijing 100191, China Article History: Received 21 September 2012; Revised 26 October 2012; Accepted 28 October 2012
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titleThermoelectric properties of Mg doped p-type BiCuSeO oxyselenides.(Report)
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jallcom.2012.10.160 Byline: Jing Li (a), Jiehe Sui (a), Celine Barreteau (b), David Berardan (b), Nita Dragoe (b), Wei Cai (a), Yanling Pei (c), Li-Dong Zhao (b) Keywords: BiCuSeO; Thermoelectric; Electrical conductivity; Seebeck coefficient; Thermal conductivity Abstract: a* We show that Mg2+ doping on the Bi3+ site can be used to increase the charge carrier concentrations. a* Mg doping has a lower limited doping efficiency, contrary to those of alkali metals (Ca, Sr and Ba). a* The lattice thermal conductivity can be reduced by the excess MgO located at the grain boundaries. a* A ZT value of 0.67 has been acheived at 923K for Bi0.95Mg0.05CuSeO. Author Affiliation: (a) National Key Laboratory Precision Hot Processing of Metals, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China (b) LEMHE, ICMMO (CNRS UMR 8182), Univ. Paris Sud, Orsay F91405, France (c) School of Materials Science and Engineering, Beihang University, Beijing 100191, China Article History: Received 21 September 2012; Revised 26 October 2012; Accepted 28 October 2012
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abstractTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.jallcom.2012.10.160 Byline: Jing Li (a), Jiehe Sui (a), Celine Barreteau (b), David Berardan (b), Nita Dragoe (b), Wei Cai (a), Yanling Pei (c), Li-Dong Zhao (b) Keywords: BiCuSeO; Thermoelectric; Electrical conductivity; Seebeck coefficient; Thermal conductivity Abstract: a* We show that Mg2+ doping on the Bi3+ site can be used to increase the charge carrier concentrations. a* Mg doping has a lower limited doping efficiency, contrary to those of alkali metals (Ca, Sr and Ba). a* The lattice thermal conductivity can be reduced by the excess MgO located at the grain boundaries. a* A ZT value of 0.67 has been acheived at 923K for Bi0.95Mg0.05CuSeO. Author Affiliation: (a) National Key Laboratory Precision Hot Processing of Metals, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China (b) LEMHE, ICMMO (CNRS UMR 8182), Univ. Paris Sud, Orsay F91405, France (c) School of Materials Science and Engineering, Beihang University, Beijing 100191, China Article History: Received 21 September 2012; Revised 26 October 2012; Accepted 28 October 2012
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