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Grain growth and mechanical properties of CeO.sub.2-x films deposited on Si(100) substrates by pulsed dc magnetron sputtering

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.surfcoat.2012.11.068 Byline: In-Wook Park, Jianliang Lin, John J. Moore, Marat Khafizov, David Hurley, Michele V. Manuel, Todd Allen Keywords: CeO.sub.2-x films; Pulsed dc magnetron sputtering; Rapid thermal a... Full description

Journal Title: Surface & Coatings Technology Feb 25, 2013, Vol.217, p.34(5)
Main Author: Park, In - Wook
Other Authors: Lin, Jianliang , Moore, John J. , Khafizov, Marat , Hurley, David , Manuel, Michele V. , Allen, Todd
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Cengage Learning, Inc.
ID: ISSN: 0257-8972
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recordid: gale_ofa318297966
title: Grain growth and mechanical properties of CeO.sub.2-x films deposited on Si(100) substrates by pulsed dc magnetron sputtering
format: Article
creator:
  • Park, In - Wook
  • Lin, Jianliang
  • Moore, John J.
  • Khafizov, Marat
  • Hurley, David
  • Manuel, Michele V.
  • Allen, Todd
subjects:
  • Silicon -- Analysis
  • Silicon -- Mechanical Properties
  • Thin Films -- Analysis
  • Thin Films -- Mechanical Properties
  • Rare Earth Metal Compounds -- Analysis
  • Rare Earth Metal Compounds -- Mechanical Properties
  • Cerium -- Analysis
  • Cerium -- Mechanical Properties
ispartof: Surface & Coatings Technology, Feb 25, 2013, Vol.217, p.34(5)
description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.surfcoat.2012.11.068 Byline: In-Wook Park, Jianliang Lin, John J. Moore, Marat Khafizov, David Hurley, Michele V. Manuel, Todd Allen Keywords: CeO.sub.2-x films; Pulsed dc magnetron sputtering; Rapid thermal annealing (RTA); Mechanical properties; Phase transition Abstract: CeO.sub.2-x films were deposited by sputtering a metal Ce target in a gas mixture of high purity Ar and O.sub.2 using a pulsed unbalanced magnetron sputtering system. In this work, cerium oxide thin films were grown onto silicon substrates under different O.sub.2 flow rates, which were varied from 20 to 80% of the total flow rate with simultaneous changes in the Ar flow rate. In addition, different growth conditions and the influence of post-deposition rapid thermal annealing (RTA) were performed to tailor the stoichiometry of the cerium oxide films. The microstructure and mechanical properties of the films were characterized using electron probe microanalysis (EPMA), X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, and nano-indentation. EPMA results revealed that all as-deposited CeO.sub.2-x films have an O/Ce ratio about 1.75. When the post-annealing temperature (T.sub.PA) for the films was increased from 800 to 1100[degrees]C, a reduction of oxygen in the film was observed, which led to a phase transition from cubic CeO.sub.2-x (111) to hexagonal Ce.sub.2O.sub.3 (002). This phase transition is related to Ce.sup.4+ to Ce.sup.3+ cation transformation due to the formation of oxygen vacancies. The hardness and elastic modulus of the as-deposited CeO.sub.2-x films were 11.7GPa and 241GPa, respectively, which were reduced to about 7.5GPa and 150GPa, respectively, after annealing at 1100[degrees]C. Article History: Received 6 April 2012; Accepted 25 November 2012
language: English
source: Cengage Learning, Inc.
identifier: ISSN: 0257-8972
fulltext: fulltext
issn:
  • 0257-8972
  • 02578972
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titleGrain growth and mechanical properties of CeO.sub.2-x films deposited on Si(100) substrates by pulsed dc magnetron sputtering
creatorPark, In - Wook ; Lin, Jianliang ; Moore, John J. ; Khafizov, Marat ; Hurley, David ; Manuel, Michele V. ; Allen, Todd
ispartofSurface & Coatings Technology, Feb 25, 2013, Vol.217, p.34(5)
identifierISSN: 0257-8972
subjectSilicon -- Analysis ; Silicon -- Mechanical Properties ; Thin Films -- Analysis ; Thin Films -- Mechanical Properties ; Rare Earth Metal Compounds -- Analysis ; Rare Earth Metal Compounds -- Mechanical Properties ; Cerium -- Analysis ; Cerium -- Mechanical Properties
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.surfcoat.2012.11.068 Byline: In-Wook Park, Jianliang Lin, John J. Moore, Marat Khafizov, David Hurley, Michele V. Manuel, Todd Allen Keywords: CeO.sub.2-x films; Pulsed dc magnetron sputtering; Rapid thermal annealing (RTA); Mechanical properties; Phase transition Abstract: CeO.sub.2-x films were deposited by sputtering a metal Ce target in a gas mixture of high purity Ar and O.sub.2 using a pulsed unbalanced magnetron sputtering system. In this work, cerium oxide thin films were grown onto silicon substrates under different O.sub.2 flow rates, which were varied from 20 to 80% of the total flow rate with simultaneous changes in the Ar flow rate. In addition, different growth conditions and the influence of post-deposition rapid thermal annealing (RTA) were performed to tailor the stoichiometry of the cerium oxide films. The microstructure and mechanical properties of the films were characterized using electron probe microanalysis (EPMA), X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, and nano-indentation. EPMA results revealed that all as-deposited CeO.sub.2-x films have an O/Ce ratio about 1.75. When the post-annealing temperature (T.sub.PA) for the films was increased from 800 to 1100[degrees]C, a reduction of oxygen in the film was observed, which led to a phase transition from cubic CeO.sub.2-x (111) to hexagonal Ce.sub.2O.sub.3 (002). This phase transition is related to Ce.sup.4+ to Ce.sup.3+ cation transformation due to the formation of oxygen vacancies. The hardness and elastic modulus of the as-deposited CeO.sub.2-x films were 11.7GPa and 241GPa, respectively, which were reduced to about 7.5GPa and 150GPa, respectively, after annealing at 1100[degrees]C. Article History: Received 6 April 2012; Accepted 25 November 2012
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titleGrain growth and mechanical properties of CeO.sub.2-x films deposited on Si(100) substrates by pulsed dc magnetron sputtering.
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.surfcoat.2012.11.068 Byline: In-Wook Park, Jianliang Lin, John J. Moore, Marat Khafizov, David Hurley, Michele V. Manuel, Todd Allen Keywords: CeO.sub.2-x films; Pulsed dc magnetron sputtering; Rapid thermal annealing (RTA); Mechanical properties; Phase transition Abstract: CeO.sub.2-x films were deposited by sputtering a metal Ce target in a gas mixture of high purity Ar and O.sub.2 using a pulsed unbalanced magnetron sputtering system. In this work, cerium oxide thin films were grown onto silicon substrates under different O.sub.2 flow rates, which were varied from 20 to 80% of the total flow rate with simultaneous changes in the Ar flow rate. In addition, different growth conditions and the influence of post-deposition rapid thermal annealing (RTA) were performed to tailor the stoichiometry of the cerium oxide films. The microstructure and mechanical properties of the films were characterized using electron probe microanalysis (EPMA), X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, and nano-indentation. EPMA results revealed that all as-deposited CeO.sub.2-x films have an O/Ce ratio about 1.75. When the post-annealing temperature (T.sub.PA) for the films was increased from 800 to 1100[degrees]C, a reduction of oxygen in the film was observed, which led to a phase transition from cubic CeO.sub.2-x (111) to hexagonal Ce.sub.2O.sub.3 (002). This phase transition is related to Ce.sup.4+ to Ce.sup.3+ cation transformation due to the formation of oxygen vacancies. The hardness and elastic modulus of the as-deposited CeO.sub.2-x films were 11.7GPa and 241GPa, respectively, which were reduced to about 7.5GPa and 150GPa, respectively, after annealing at 1100[degrees]C. Article History: Received 6 April 2012; Accepted 25 November 2012
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abstractTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.surfcoat.2012.11.068 Byline: In-Wook Park, Jianliang Lin, John J. Moore, Marat Khafizov, David Hurley, Michele V. Manuel, Todd Allen Keywords: CeO.sub.2-x films; Pulsed dc magnetron sputtering; Rapid thermal annealing (RTA); Mechanical properties; Phase transition Abstract: CeO.sub.2-x films were deposited by sputtering a metal Ce target in a gas mixture of high purity Ar and O.sub.2 using a pulsed unbalanced magnetron sputtering system. In this work, cerium oxide thin films were grown onto silicon substrates under different O.sub.2 flow rates, which were varied from 20 to 80% of the total flow rate with simultaneous changes in the Ar flow rate. In addition, different growth conditions and the influence of post-deposition rapid thermal annealing (RTA) were performed to tailor the stoichiometry of the cerium oxide films. The microstructure and mechanical properties of the films were characterized using electron probe microanalysis (EPMA), X-ray diffraction, field-emission scanning electron microscopy, X-ray photoelectron spectroscopy, and nano-indentation. EPMA results revealed that all as-deposited CeO.sub.2-x films have an O/Ce ratio about 1.75. When the post-annealing temperature (T.sub.PA) for the films was increased from 800 to 1100[degrees]C, a reduction of oxygen in the film was observed, which led to a phase transition from cubic CeO.sub.2-x (111) to hexagonal Ce.sub.2O.sub.3 (002). This phase transition is related to Ce.sup.4+ to Ce.sup.3+ cation transformation due to the formation of oxygen vacancies. The hardness and elastic modulus of the as-deposited CeO.sub.2-x films were 11.7GPa and 241GPa, respectively, which were reduced to about 7.5GPa and 150GPa, respectively, after annealing at 1100[degrees]C. Article History: Received 6 April 2012; Accepted 25 November 2012
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