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Effect of incident angle on thin film growth: A molecular dynamics simulation study

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.01.067 Byline: Yongzhi Cao, Junjie Zhang, Chao Wu, Fuli Yu Keywords: Physical vapor deposition; Incident angle; Molecular dynamics; Microstructure Abstract: In current work we perform molecular dynami... Full description

Journal Title: Thin Solid Films Oct 1, 2013, Vol.544, p.496(4)
Main Author: Cao, Yongzhi
Other Authors: Zhang, Junjie , Wu, Chao , Yu, Fuli
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Cengage Learning, Inc.
ID: ISSN: 0040-6090
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recordid: gale_ofa345890153
title: Effect of incident angle on thin film growth: A molecular dynamics simulation study
format: Article
creator:
  • Cao, Yongzhi
  • Zhang, Junjie
  • Wu, Chao
  • Yu, Fuli
subjects:
  • Thin Films -- Analysis
ispartof: Thin Solid Films, Oct 1, 2013, Vol.544, p.496(4)
description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.01.067 Byline: Yongzhi Cao, Junjie Zhang, Chao Wu, Fuli Yu Keywords: Physical vapor deposition; Incident angle; Molecular dynamics; Microstructure Abstract: In current work we perform molecular dynamics simulations to investigate the growth of Al thin film on Cu substrate through physical vapor deposition. The effects of incident angle on the morphology and the formed internal microstructures of Al thin films are emphasized. Simulation results show that Al thin films grow in the epitaxy growth mode of layer-by-layer fashion under incident energy of 0.1eV. Further analysis of the internal microstructures demonstrates the formation of twin boundaries in Al thin films. It is found that the morphology of the island-like clusters formed in Al thin films varies significantly upon incident angle. The compositions of atoms of different lattice structures strongly depend on incident angle, which consequently affects the propensity of different internal microstructures formed in Al thin films.
language: English
source: Cengage Learning, Inc.
identifier: ISSN: 0040-6090
fulltext: fulltext
issn:
  • 0040-6090
  • 00406090
url: Link


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descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.01.067 Byline: Yongzhi Cao, Junjie Zhang, Chao Wu, Fuli Yu Keywords: Physical vapor deposition; Incident angle; Molecular dynamics; Microstructure Abstract: In current work we perform molecular dynamics simulations to investigate the growth of Al thin film on Cu substrate through physical vapor deposition. The effects of incident angle on the morphology and the formed internal microstructures of Al thin films are emphasized. Simulation results show that Al thin films grow in the epitaxy growth mode of layer-by-layer fashion under incident energy of 0.1eV. Further analysis of the internal microstructures demonstrates the formation of twin boundaries in Al thin films. It is found that the morphology of the island-like clusters formed in Al thin films varies significantly upon incident angle. The compositions of atoms of different lattice structures strongly depend on incident angle, which consequently affects the propensity of different internal microstructures formed in Al thin films.
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abstractTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.01.067 Byline: Yongzhi Cao, Junjie Zhang, Chao Wu, Fuli Yu Keywords: Physical vapor deposition; Incident angle; Molecular dynamics; Microstructure Abstract: In current work we perform molecular dynamics simulations to investigate the growth of Al thin film on Cu substrate through physical vapor deposition. The effects of incident angle on the morphology and the formed internal microstructures of Al thin films are emphasized. Simulation results show that Al thin films grow in the epitaxy growth mode of layer-by-layer fashion under incident energy of 0.1eV. Further analysis of the internal microstructures demonstrates the formation of twin boundaries in Al thin films. It is found that the morphology of the island-like clusters formed in Al thin films varies significantly upon incident angle. The compositions of atoms of different lattice structures strongly depend on incident angle, which consequently affects the propensity of different internal microstructures formed in Al thin films.
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