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Ga.sub.19Sb.sub.81 film for multi-level phase-change memory

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.04.101 Byline: Po-Chin Chang, Hsin-Wei Huang, Chih-Chung Chang, Shih-Chin Chang, Ming-Jinn Tsai, Tsung-Shune Chin Abstract: We studied Ga.sub.19Sb.sub.81 film deposited on SiO.sub.x/Si(100) by RF co-s... Full description

Journal Title: Thin Solid Films Oct 1, 2013, Vol.544, p.107(5)
Main Author: Chang, Po - Chin
Other Authors: Huang, Hsin - Wei , Chang, Chih - Chung , Chang, Shih - Chin , Tsai, Ming - Jinn , Chin, Tsung - Shune
Format: Electronic Article Electronic Article
Language: English
Quelle: Cengage Learning, Inc.
ID: ISSN: 0040-6090
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recordid: gale_ofa345890227
title: Ga.sub.19Sb.sub.81 film for multi-level phase-change memory
format: Article
creator:
  • Chang, Po - Chin
  • Huang, Hsin - Wei
  • Chang, Chih - Chung
  • Chang, Shih - Chin
  • Tsai, Ming - Jinn
  • Chin, Tsung - Shune
ispartof: Thin Solid Films, Oct 1, 2013, Vol.544, p.107(5)
description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.04.101 Byline: Po-Chin Chang, Hsin-Wei Huang, Chih-Chung Chang, Shih-Chin Chang, Ming-Jinn Tsai, Tsung-Shune Chin Abstract: We studied Ga.sub.19Sb.sub.81 film deposited on SiO.sub.x/Si(100) by RF co-sputtering using GaSb and Sb targets aiming for applications in multi-level phase-change memory. Crystallization temperature (T.sub.x) is 228[degrees]C-235[degrees]C determined by electrical resistance versus temperature measurements at various heating rates. The dramatic resistance drop is attributed to increased carrier concentration based on Hall measurements. The films show p-type conduction behavior at all temperature regimes. The temperature for ten-year failure-time (T.sub.10y) and the activation energy of crystallization (E.sub.a) is 156[degrees]C and 4.2eV, respectively, as deduced using Arrhenius plots from as-deposited films. The two-step drop in resistance is attributed to the two-step phase formation as depicted by X-ray diffractometry. Density changes before and after crystallization is 5.3% (Ge.sub.2Sb.sub.2Te.sub.5: 9.5%) as analyzed by the X-ray reflectivity method. Memory switching is carried out by using test cells with a via hole size of 600nm. Set and reset processes can be achieved by using pulse widths of 20-100ns. The cycling test showed performance at least 10.sup.4 set-reset times. Furthermore, two stable set states are routinely achieved by controlling set voltages. The two states can be operated at least 10.sup.2 cycles steadily with resistance ratios ~5 and ~22 times, respectively. The two set states arise from the formation of two phases (Sb then GaSb) during set operations.
language: English
source: Cengage Learning, Inc.
identifier: ISSN: 0040-6090
fulltext: fulltext
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  • 0040-6090
  • 00406090
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titleGa.sub.19Sb.sub.81 film for multi-level phase-change memory
creatorChang, Po - Chin ; Huang, Hsin - Wei ; Chang, Chih - Chung ; Chang, Shih - Chin ; Tsai, Ming - Jinn ; Chin, Tsung - Shune
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identifierISSN: 0040-6090
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.04.101 Byline: Po-Chin Chang, Hsin-Wei Huang, Chih-Chung Chang, Shih-Chin Chang, Ming-Jinn Tsai, Tsung-Shune Chin Abstract: We studied Ga.sub.19Sb.sub.81 film deposited on SiO.sub.x/Si(100) by RF co-sputtering using GaSb and Sb targets aiming for applications in multi-level phase-change memory. Crystallization temperature (T.sub.x) is 228[degrees]C-235[degrees]C determined by electrical resistance versus temperature measurements at various heating rates. The dramatic resistance drop is attributed to increased carrier concentration based on Hall measurements. The films show p-type conduction behavior at all temperature regimes. The temperature for ten-year failure-time (T.sub.10y) and the activation energy of crystallization (E.sub.a) is 156[degrees]C and 4.2eV, respectively, as deduced using Arrhenius plots from as-deposited films. The two-step drop in resistance is attributed to the two-step phase formation as depicted by X-ray diffractometry. Density changes before and after crystallization is 5.3% (Ge.sub.2Sb.sub.2Te.sub.5: 9.5%) as analyzed by the X-ray reflectivity method. Memory switching is carried out by using test cells with a via hole size of 600nm. Set and reset processes can be achieved by using pulse widths of 20-100ns. The cycling test showed performance at least 10.sup.4 set-reset times. Furthermore, two stable set states are routinely achieved by controlling set voltages. The two states can be operated at least 10.sup.2 cycles steadily with resistance ratios ~5 and ~22 times, respectively. The two set states arise from the formation of two phases (Sb then GaSb) during set operations.
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titleGa.sub.19Sb.sub.81 film for multi-level phase-change memory.
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.04.101 Byline: Po-Chin Chang, Hsin-Wei Huang, Chih-Chung Chang, Shih-Chin Chang, Ming-Jinn Tsai, Tsung-Shune Chin Abstract: We studied Ga.sub.19Sb.sub.81 film deposited on SiO.sub.x/Si(100) by RF co-sputtering using GaSb and Sb targets aiming for applications in multi-level phase-change memory. Crystallization temperature (T.sub.x) is 228[degrees]C-235[degrees]C determined by electrical resistance versus temperature measurements at various heating rates. The dramatic resistance drop is attributed to increased carrier concentration based on Hall measurements. The films show p-type conduction behavior at all temperature regimes. The temperature for ten-year failure-time (T.sub.10y) and the activation energy of crystallization (E.sub.a) is 156[degrees]C and 4.2eV, respectively, as deduced using Arrhenius plots from as-deposited films. The two-step drop in resistance is attributed to the two-step phase formation as depicted by X-ray diffractometry. Density changes before and after crystallization is 5.3% (Ge.sub.2Sb.sub.2Te.sub.5: 9.5%) as analyzed by the X-ray reflectivity method. Memory switching is carried out by using test cells with a via hole size of 600nm. Set and reset processes can be achieved by using pulse widths of 20-100ns. The cycling test showed performance at least 10.sup.4 set-reset times. Furthermore, two stable set states are routinely achieved by controlling set voltages. The two states can be operated at least 10.sup.2 cycles steadily with resistance ratios ~5 and ~22 times, respectively. The two set states arise from the formation of two phases (Sb then GaSb) during set operations.
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abstractTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.04.101 Byline: Po-Chin Chang, Hsin-Wei Huang, Chih-Chung Chang, Shih-Chin Chang, Ming-Jinn Tsai, Tsung-Shune Chin Abstract: We studied Ga.sub.19Sb.sub.81 film deposited on SiO.sub.x/Si(100) by RF co-sputtering using GaSb and Sb targets aiming for applications in multi-level phase-change memory. Crystallization temperature (T.sub.x) is 228[degrees]C-235[degrees]C determined by electrical resistance versus temperature measurements at various heating rates. The dramatic resistance drop is attributed to increased carrier concentration based on Hall measurements. The films show p-type conduction behavior at all temperature regimes. The temperature for ten-year failure-time (T.sub.10y) and the activation energy of crystallization (E.sub.a) is 156[degrees]C and 4.2eV, respectively, as deduced using Arrhenius plots from as-deposited films. The two-step drop in resistance is attributed to the two-step phase formation as depicted by X-ray diffractometry. Density changes before and after crystallization is 5.3% (Ge.sub.2Sb.sub.2Te.sub.5: 9.5%) as analyzed by the X-ray reflectivity method. Memory switching is carried out by using test cells with a via hole size of 600nm. Set and reset processes can be achieved by using pulse widths of 20-100ns. The cycling test showed performance at least 10.sup.4 set-reset times. Furthermore, two stable set states are routinely achieved by controlling set voltages. The two states can be operated at least 10.sup.2 cycles steadily with resistance ratios ~5 and ~22 times, respectively. The two set states arise from the formation of two phases (Sb then GaSb) during set operations.
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