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Effects of H.sub.2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.009 Byline: Chuan Li, J.H. Hsieh, K.L. Huang, Yu Ting Shao, Yi Wen Chen Abstract: Amorphous hydrogenated silicon films were deposited on quartz substrates in an inductive coupled plasma-chemical va... Full description

Journal Title: Thin Solid Films Oct 1, 2013, Vol.544, p.37(7)
Main Author: Li, Chuan
Other Authors: Hsieh, J. H. , Huang, K. L. , Shao, Yu Ting , Chen, Yi Wen
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Cengage Learning, Inc.
ID: ISSN: 0040-6090
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recordid: gale_ofa345890241
title: Effects of H.sub.2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system
format: Article
creator:
  • Li, Chuan
  • Hsieh, J. H.
  • Huang, K. L.
  • Shao, Yu Ting
  • Chen, Yi Wen
subjects:
  • Raman Spectroscopy -- Analysis
  • Chemical Vapor Deposition -- Analysis
  • Silicon -- Analysis
  • Thin Films -- Analysis
ispartof: Thin Solid Films, Oct 1, 2013, Vol.544, p.37(7)
description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.009 Byline: Chuan Li, J.H. Hsieh, K.L. Huang, Yu Ting Shao, Yi Wen Chen Abstract: Amorphous hydrogenated silicon films were deposited on quartz substrates in an inductive coupled plasma-chemical vapor deposition system with four internal low inductance antennas units. Different Ar and hydrogen flow rates were tested for their influences on the structures of deposited films. For monitoring purposes, Langmuir probe and optical emission spectrometer were installed to detect the variation of electrical field in plasma during deposition. Data from Langmuir probe and optical emission spectrometer were analyzed subsequently. After deposition, the films were examined by X-ray diffraction and Raman spectrometer for their microstructures. Results indicate that under the supply of pure Ar flow, the deposition rate can be expedited to 3.5nm/s and amorphous films were formed on quartz substrates. With the supply of mixed hydrogen and argon (Ar 15sccm+H.sub.2 50sccm+SiH.sub.4 50sccm), the deposition rate can reach 4.5nm/s. Although it is well known that a high supply of H.sub.2 helps the formation of micro-crystalline silicon, these deposited hydrogenated Si films, confirmed by X-ray diffraction patterns and Raman spectroscopy, all maintained their amorphousness under various range of Ar and H.sub.2 flow rates.
language: English
source: Cengage Learning, Inc.
identifier: ISSN: 0040-6090
fulltext: fulltext
issn:
  • 0040-6090
  • 00406090
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titleEffects of H.sub.2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system
creatorLi, Chuan ; Hsieh, J. H. ; Huang, K. L. ; Shao, Yu Ting ; Chen, Yi Wen
ispartofThin Solid Films, Oct 1, 2013, Vol.544, p.37(7)
identifierISSN: 0040-6090
subjectRaman Spectroscopy -- Analysis ; Chemical Vapor Deposition -- Analysis ; Silicon -- Analysis ; Thin Films -- Analysis
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.009 Byline: Chuan Li, J.H. Hsieh, K.L. Huang, Yu Ting Shao, Yi Wen Chen Abstract: Amorphous hydrogenated silicon films were deposited on quartz substrates in an inductive coupled plasma-chemical vapor deposition system with four internal low inductance antennas units. Different Ar and hydrogen flow rates were tested for their influences on the structures of deposited films. For monitoring purposes, Langmuir probe and optical emission spectrometer were installed to detect the variation of electrical field in plasma during deposition. Data from Langmuir probe and optical emission spectrometer were analyzed subsequently. After deposition, the films were examined by X-ray diffraction and Raman spectrometer for their microstructures. Results indicate that under the supply of pure Ar flow, the deposition rate can be expedited to 3.5nm/s and amorphous films were formed on quartz substrates. With the supply of mixed hydrogen and argon (Ar 15sccm+H.sub.2 50sccm+SiH.sub.4 50sccm), the deposition rate can reach 4.5nm/s. Although it is well known that a high supply of H.sub.2 helps the formation of micro-crystalline silicon, these deposited hydrogenated Si films, confirmed by X-ray diffraction patterns and Raman spectroscopy, all maintained their amorphousness under various range of Ar and H.sub.2 flow rates.
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titleEffects of H.sub.2 and Ar flow rates on the deposition of hydrogenated silicon thin films by an inductive coupled plasma-chemical vapor deposition system.
descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.009 Byline: Chuan Li, J.H. Hsieh, K.L. Huang, Yu Ting Shao, Yi Wen Chen Abstract: Amorphous hydrogenated silicon films were deposited on quartz substrates in an inductive coupled plasma-chemical vapor deposition system with four internal low inductance antennas units. Different Ar and hydrogen flow rates were tested for their influences on the structures of deposited films. For monitoring purposes, Langmuir probe and optical emission spectrometer were installed to detect the variation of electrical field in plasma during deposition. Data from Langmuir probe and optical emission spectrometer were analyzed subsequently. After deposition, the films were examined by X-ray diffraction and Raman spectrometer for their microstructures. Results indicate that under the supply of pure Ar flow, the deposition rate can be expedited to 3.5nm/s and amorphous films were formed on quartz substrates. With the supply of mixed hydrogen and argon (Ar 15sccm+H.sub.2 50sccm+SiH.sub.4 50sccm), the deposition rate can reach 4.5nm/s. Although it is well known that a high supply of H.sub.2 helps the formation of micro-crystalline silicon, these deposited hydrogenated Si films, confirmed by X-ray diffraction patterns and Raman spectroscopy, all maintained their amorphousness under various range of Ar and H.sub.2 flow rates.
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abstractTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.009 Byline: Chuan Li, J.H. Hsieh, K.L. Huang, Yu Ting Shao, Yi Wen Chen Abstract: Amorphous hydrogenated silicon films were deposited on quartz substrates in an inductive coupled plasma-chemical vapor deposition system with four internal low inductance antennas units. Different Ar and hydrogen flow rates were tested for their influences on the structures of deposited films. For monitoring purposes, Langmuir probe and optical emission spectrometer were installed to detect the variation of electrical field in plasma during deposition. Data from Langmuir probe and optical emission spectrometer were analyzed subsequently. After deposition, the films were examined by X-ray diffraction and Raman spectrometer for their microstructures. Results indicate that under the supply of pure Ar flow, the deposition rate can be expedited to 3.5nm/s and amorphous films were formed on quartz substrates. With the supply of mixed hydrogen and argon (Ar 15sccm+H.sub.2 50sccm+SiH.sub.4 50sccm), the deposition rate can reach 4.5nm/s. Although it is well known that a high supply of H.sub.2 helps the formation of micro-crystalline silicon, these deposited hydrogenated Si films, confirmed by X-ray diffraction patterns and Raman spectroscopy, all maintained their amorphousness under various range of Ar and H.sub.2 flow rates.
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