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Effect of substrate temperatures on evaporated In.sub.2S.sub.3 thin film buffer layers for Cu(In,Ga)Se.sub.2 solar cells

To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.071 Byline: Zhao Yang Zhong, Eou Sik Cho, Sang Jik Kwon Abstract: For the realization of vacuum in-line process in the fabrication of Cu(In,Ga)Se.sub.2 (CIGS) solar cells, In.sub.2S.sub.3 thin film... Full description

Journal Title: Thin Solid Films Nov 29, 2013, Vol.547, p.22(6)
Main Author: Zhong, Zhao Yang
Other Authors: Cho, Eou Sik , Kwon, Sang Jik
Format: Electronic Article Electronic Article
Language: English
Subjects:
Quelle: Cengage Learning, Inc.
ID: ISSN: 0040-6090
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recordid: gale_ofa346976577
title: Effect of substrate temperatures on evaporated In.sub.2S.sub.3 thin film buffer layers for Cu(In,Ga)Se.sub.2 solar cells
format: Article
creator:
  • Zhong, Zhao Yang
  • Cho, Eou Sik
  • Kwon, Sang Jik
subjects:
  • Thin Films -- Analysis
  • Solar Cells -- Analysis
ispartof: Thin Solid Films, Nov 29, 2013, Vol.547, p.22(6)
description: To link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.071 Byline: Zhao Yang Zhong, Eou Sik Cho, Sang Jik Kwon Abstract: For the realization of vacuum in-line process in the fabrication of Cu(In,Ga)Se.sub.2 (CIGS) solar cells, In.sub.2S.sub.3 thin film buffer layers for CIGS have been deposited on glasses and CIGS layers with a thickness of about 650A by thermal evaporation process. During the thermal evaporation, the temperature of the substrate was varied from room temperature to 500[degrees]C by heating and the grown In.sub.2S.sub.3 films were investigated and analyzed in terms of the optimized buffer layer for CIGS solar cells. From the results of scanning electron microscope and X-ray diffraction, the In.sub.2S.sub.3 thin film deposited at a higher substrate temperature showed the larger grain size and the films have amorphous structural characteristics. Although the structural characteristics such as the atomic ratio of In to S and transmittance of the In.sub.2S.sub.3 thin films were not proportional to temperature, it was possible to obtain the large optical band gap of In.sub.2S.sub.3 films of about 3.8-3.9eV enough to be used as the buffer layer of CIGS.
language: English
source: Cengage Learning, Inc.
identifier: ISSN: 0040-6090
fulltext: fulltext
issn:
  • 0040-6090
  • 00406090
url: Link


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titleEffect of substrate temperatures on evaporated In.sub.2S.sub.3 thin film buffer layers for Cu(In,Ga)Se.sub.2 solar cells
creatorZhong, Zhao Yang ; Cho, Eou Sik ; Kwon, Sang Jik
ispartofThin Solid Films, Nov 29, 2013, Vol.547, p.22(6)
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descriptionTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.071 Byline: Zhao Yang Zhong, Eou Sik Cho, Sang Jik Kwon Abstract: For the realization of vacuum in-line process in the fabrication of Cu(In,Ga)Se.sub.2 (CIGS) solar cells, In.sub.2S.sub.3 thin film buffer layers for CIGS have been deposited on glasses and CIGS layers with a thickness of about 650A by thermal evaporation process. During the thermal evaporation, the temperature of the substrate was varied from room temperature to 500[degrees]C by heating and the grown In.sub.2S.sub.3 films were investigated and analyzed in terms of the optimized buffer layer for CIGS solar cells. From the results of scanning electron microscope and X-ray diffraction, the In.sub.2S.sub.3 thin film deposited at a higher substrate temperature showed the larger grain size and the films have amorphous structural characteristics. Although the structural characteristics such as the atomic ratio of In to S and transmittance of the In.sub.2S.sub.3 thin films were not proportional to temperature, it was possible to obtain the large optical band gap of In.sub.2S.sub.3 films of about 3.8-3.9eV enough to be used as the buffer layer of CIGS.
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abstractTo link to full-text access for this article, visit this link: http://dx.doi.org/10.1016/j.tsf.2013.05.071 Byline: Zhao Yang Zhong, Eou Sik Cho, Sang Jik Kwon Abstract: For the realization of vacuum in-line process in the fabrication of Cu(In,Ga)Se.sub.2 (CIGS) solar cells, In.sub.2S.sub.3 thin film buffer layers for CIGS have been deposited on glasses and CIGS layers with a thickness of about 650A by thermal evaporation process. During the thermal evaporation, the temperature of the substrate was varied from room temperature to 500[degrees]C by heating and the grown In.sub.2S.sub.3 films were investigated and analyzed in terms of the optimized buffer layer for CIGS solar cells. From the results of scanning electron microscope and X-ray diffraction, the In.sub.2S.sub.3 thin film deposited at a higher substrate temperature showed the larger grain size and the films have amorphous structural characteristics. Although the structural characteristics such as the atomic ratio of In to S and transmittance of the In.sub.2S.sub.3 thin films were not proportional to temperature, it was possible to obtain the large optical band gap of In.sub.2S.sub.3 films of about 3.8-3.9eV enough to be used as the buffer layer of CIGS.
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