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In-situ Raman spectroscopy of current-carrying graphene microbridge

Byline: , , Heechae Choi, Hyun-Joon Shin, Sangho Lee, Sanghoon Kim, Soogil Lee, Seungchul Kim, Kwang-Ryeol Lee, Sang Jin Kim, ung Hee Hong, Jongill Hong, In-Sang Yang In-situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3I1/4mx80I1/4m) under electrical current d... Full description

Journal Title: Journal of Raman Spectroscopy Feb, 2014, Vol.45(2), p.168(5)
Main Author: Choi, Minkyung
Other Authors: Son, Jangyup , Choi, Heechae , Shin, Hyun - Joon , Lee, Sangho , Kim, Sanghoon , Lee, Soogil , Kim, Seungchul , Lee, Kwang - Ryeol , Kim, Sang Jin , Hong, Byung Hee , Hong, Jongill , Yang, In - Sang
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0377-0486
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recordid: gale_ofa357909691
title: In-situ Raman spectroscopy of current-carrying graphene microbridge
format: Article
creator:
  • Choi, Minkyung
  • Son, Jangyup
  • Choi, Heechae
  • Shin, Hyun - Joon
  • Lee, Sangho
  • Kim, Sanghoon
  • Lee, Soogil
  • Kim, Seungchul
  • Lee, Kwang - Ryeol
  • Kim, Sang Jin
  • Hong, Byung Hee
  • Hong, Jongill
  • Yang, In - Sang
subjects:
  • Graphene
  • Raman Spectroscopy
  • Graphite
  • Adsorption
ispartof: Journal of Raman Spectroscopy, Feb, 2014, Vol.45(2), p.168(5)
description: Byline: , , Heechae Choi, Hyun-Joon Shin, Sangho Lee, Sanghoon Kim, Soogil Lee, Seungchul Kim, Kwang-Ryeol Lee, Sang Jin Kim, ung Hee Hong, Jongill Hong, In-Sang Yang In-situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3I1/4mx80I1/4m) under electrical current density up to 2.58x10.sub.8 A/cm.sub.2 in ambient conditions. We found that both the G and the Ga[sup.2] peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up-shift of the G peak and the Ga[sup.2] peak, after switching off the electrical current, is believed to be due to p-doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C-O and C=O bond components in the C1s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p-doping according to our density functional theory calculation of the electronic structure. Copyright [c] 2014 John Wiley & Sons, Ltd. Supporting information: Additional Supporting Information may be found in the online version of this article CAPTION(S): Supporting Info Item
language: English
source:
identifier: ISSN: 0377-0486
fulltext: fulltext
issn:
  • 0377-0486
  • 03770486
url: Link


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titleIn-situ Raman spectroscopy of current-carrying graphene microbridge
creatorChoi, Minkyung ; Son, Jangyup ; Choi, Heechae ; Shin, Hyun - Joon ; Lee, Sangho ; Kim, Sanghoon ; Lee, Soogil ; Kim, Seungchul ; Lee, Kwang - Ryeol ; Kim, Sang Jin ; Hong, Byung Hee ; Hong, Jongill ; Yang, In - Sang
ispartofJournal of Raman Spectroscopy, Feb, 2014, Vol.45(2), p.168(5)
identifierISSN: 0377-0486
subjectGraphene ; Raman Spectroscopy ; Graphite ; Adsorption
descriptionByline: , , Heechae Choi, Hyun-Joon Shin, Sangho Lee, Sanghoon Kim, Soogil Lee, Seungchul Kim, Kwang-Ryeol Lee, Sang Jin Kim, ung Hee Hong, Jongill Hong, In-Sang Yang In-situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3I1/4mx80I1/4m) under electrical current density up to 2.58x10.sub.8 A/cm.sub.2 in ambient conditions. We found that both the G and the Ga[sup.2] peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up-shift of the G peak and the Ga[sup.2] peak, after switching off the electrical current, is believed to be due to p-doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C-O and C=O bond components in the C1s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p-doping according to our density functional theory calculation of the electronic structure. Copyright [c] 2014 John Wiley & Sons, Ltd. Supporting information: Additional Supporting Information may be found in the online version of this article CAPTION(S): Supporting Info Item
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titleIn-situ Raman spectroscopy of current-carrying graphene microbridge.
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abstractByline: , , Heechae Choi, Hyun-Joon Shin, Sangho Lee, Sanghoon Kim, Soogil Lee, Seungchul Kim, Kwang-Ryeol Lee, Sang Jin Kim, ung Hee Hong, Jongill Hong, In-Sang Yang In-situ Raman spectroscopy was performed on chemical vapor deposited graphene microbridge (3I1/4mx80I1/4m) under electrical current density up to 2.58x10.sub.8 A/cm.sub.2 in ambient conditions. We found that both the G and the Ga[sup.2] peak of the Raman spectra do not restore back to the initial values at zero current, but to slightly higher values after switching off the current through the microbridge. The up-shift of the G peak and the Ga[sup.2] peak, after switching off the electrical current, is believed to be due to p-doping by oxygen adsorption, which is confirmed by scanning photoemission microscopy. Both C-O and C=O bond components in the C1s spectra from the microbridge were found to be significantly increased after high electrical current density was flown. The C=O bond is likely the main source of the p-doping according to our density functional theory calculation of the electronic structure. Copyright [c] 2014 John Wiley & Sons, Ltd. Supporting information: Additional Supporting Information may be found in the online version of this article CAPTION(S): Supporting Info Item
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