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Comparison of trapped charges and hysteresis behavior in hbn encapsulated single mos 2 flake based field effect transistors on sio 2 and hbn substrates

Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) enc... Full description

Journal Title: Nanotechnology 2018, Vol.29(33), p.335202 (8pp)
Main Author: Lee, Changhee
Other Authors: Rathi, Servin , Khan, Muhammad Atif , Lim, Dongsuk , Kim, Yunseob , Yun, Sun Jin , Youn, Doo-Hyeb , Watanabe, Kenji , Taniguchi, Takashi , Kim, Gil-Ho
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: 0957-4484 ; E-ISSN: 1361-6528 ; DOI: 10.1088/1361-6528/aac6b0
Link: http://dx.doi.org/10.1088/1361-6528/aac6b0
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recordid: iop10.1088/1361-6528/aac6b0
title: Comparison of trapped charges and hysteresis behavior in hbn encapsulated single mos 2 flake based field effect transistors on sio 2 and hbn substrates
format: Article
creator:
  • Lee, Changhee
  • Rathi, Servin
  • Khan, Muhammad Atif
  • Lim, Dongsuk
  • Kim, Yunseob
  • Yun, Sun Jin
  • Youn, Doo-Hyeb
  • Watanabe, Kenji
  • Taniguchi, Takashi
  • Kim, Gil-Ho
subjects:
  • Feldeffekttransistor
  • Molybdändisulfid
  • Bornitrid
  • Hysterese
  • Umgebungsbedingung
  • Aktive Schicht
  • Ladungsdichte
  • Schwellenspannung (Elektrisch)
  • Hexagonales Bornitrid
  • Einkapselung
  • Engineering
  • Physics
ispartof: Nanotechnology, 2018, Vol.29(33), p.335202 (8pp)
description: Molybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 −SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm −2 on hBN substrate as compared to 1.1 × 10 12 cm −2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.
language: eng
source:
identifier: ISSN: 0957-4484 ; E-ISSN: 1361-6528 ; DOI: 10.1088/1361-6528/aac6b0
fulltext: no_fulltext
issn:
  • 0957-4484
  • 1361-6528
  • 09574484
  • 13616528
url: Link


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titleComparison of trapped charges and hysteresis behavior in hbn encapsulated single mos 2 flake based field effect transistors on sio 2 and hbn substrates
creatorLee, Changhee ; Rathi, Servin ; Khan, Muhammad Atif ; Lim, Dongsuk ; Kim, Yunseob ; Yun, Sun Jin ; Youn, Doo-Hyeb ; Watanabe, Kenji ; Taniguchi, Takashi ; Kim, Gil-Ho
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descriptionMolybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 −SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm −2 on hBN substrate as compared to 1.1 × 10 12 cm −2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.
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subjectFeldeffekttransistor ; Molybdändisulfid ; Bornitrid ; Hysterese ; Umgebungsbedingung ; Aktive Schicht ; Ladungsdichte ; Schwellenspannung (Elektrisch) ; Hexagonales Bornitrid ; Einkapselung ; Engineering ; Physics;
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descriptionMolybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 −SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm −2 on hBN substrate as compared to 1.1 × 10 12 cm −2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.
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atitleComparison of trapped charges and hysteresis behavior in hBN encapsulated single MoS 2 flake based field effect transistors on SiO 2 and hBN substrates
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abstractMolybdenum disulfide (MoS 2 ) based field effect transistors (FETs) are of considerable interest in electronic and opto-electronic applications but often have large hysteresis and threshold voltage instabilities. In this study, by using advanced transfer techniques, hexagonal boron nitride (hBN) encapsulated FETs based on a single, homogeneous and atomic-thin MoS 2 flake are fabricated on hBN and SiO 2 substrates. This allows for a better and a precise comparison between the charge traps at the semiconductor-dielectric interfaces at MoS 2 −SiO 2 and hBN interfaces. The impact of ambient environment and entities on hysteresis is minimized by encapsulating the active MoS 2 layer with a single hBN on both the devices. The device to device variations induced by different MoS 2 layer is also eliminated by employing a single MoS 2 layer for fabricating both devices. After eliminating these additional factors which induce variation in the device characteristics, it is found from the measurements that the trapped charge density is reduced to 1.9 × 10 11 cm −2 on hBN substrate as compared to 1.1 × 10 12 cm −2 on SiO 2 substrate. Further, reduced hysteresis and stable threshold voltage are observed on hBN substrate and their dependence on gate sweep rate, sweep range, and gate stress is also studied. This precise comparison between encapsulated devices on SiO 2 and hBN substrates further demonstrate the requirement of hBN substrate and encapsulation for improved and stable performance of MoS 2 FETs.
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date2018-08-17