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Identifying suitable substrates for high-quality graphene-based heterostructures

We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN),... Full description

Journal Title: 2D Materials 2017, Vol.4(2), p.025030 (8pp)
Main Author: Banszerus, L
Other Authors: Janssen, H , Otto, M , Epping, A , Taniguchi, T , Watanabe, K , Beschoten, B , Neumaier, D , Stampfer, C
Format: Electronic Article Electronic Article
Language: English
Subjects:
ID: ISSN: ; E-ISSN: ; DOI: 10.1088/2053-1583/aa5b0f
Link: http://dx.doi.org/10.1088/2053-1583/aa5b0f
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recordid: iop10.1088/2053-1583/aa5b0f
title: Identifying suitable substrates for high-quality graphene-based heterostructures
format: Article
creator:
  • Banszerus, L
  • Janssen, H
  • Otto, M
  • Epping, A
  • Taniguchi, T
  • Watanabe, K
  • Beschoten, B
  • Neumaier, D
  • Stampfer, C
subjects:
  • Condensed Matter - Materials Science
  • Condensed Matter - Mesoscale And Nanoscale Physics
ispartof: 2D Materials, 2017, Vol.4(2), p.025030 (8pp)
description: We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
language: eng
source:
identifier: ISSN: ; E-ISSN: ; DOI: 10.1088/2053-1583/aa5b0f
fulltext: no_fulltext
url: Link


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titleIdentifying suitable substrates for high-quality graphene-based heterostructures
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descriptionWe report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
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titleIdentifying suitable substrates for high-quality graphene-based heterostructures
descriptionWe report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
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abstractWe report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different substrate materials, including hexagonal boron nitride (hBN), transition metal dichalcogenides, silicon, different oxides and nitrides, as well as polymers. By applying a hBN-assisted, contamination free, dry transfer process for CVD graphene, high-quality heterostructures with low doping densities and low strain variations are assembled. The Raman spectra of these pristine heterostructures are sensitive to substrate-induced doping and strain variations and are thus used to probe the suitability of the substrate material for potential high-quality graphene devices. We find that the flatness of the substrate material is a key figure for gaining, or preserving high-quality graphene.
doi10.1088/2053-1583/aa5b0f
eissn20531583
issn20531583
date2017-06-01